H10N40T HUIXIN | Alldatasheet

Document overview

  • Manufacturer or author: Provided By alldatasheet.com(free datasheet download site)
  • PDF pages: 7

Technical content

+86-769-22857832 huixin@hxkj.hk Rev.01 Page 1 of 7 H10N40T 400V N-Channel MOSFET Features:

  • Fast switching speed
  • 100% avalanche tested
  • Improved dv/dt capability
  • Enhanced Avalanche Ruggedness
  • Lead Free Applications:
  • Switch Mode Power Supply(SMPS)
  • Adapter & Charger
  • AC-DC Switching Power Supply

Ordering Information

Part Number Package Marking Packing Qty. H10N40T H10N40TO-220 T Tube 50 PCS Absolute Maximun Ratings (Tc= 2 5℃unless otherwise specified) Symbol Parameter Rating Units VDS Drain-to-Source Voltage 400 V VGS Gate- to- Source Voltage ±30 V ID Continuous Drain Current TC=25℃ 10 AContinuous Drain Current TC=100℃ 4.9 IDM Pulsed Drain Current 40 PD Power Dissipation 114 W EAS Single Pulse Avalanche Engergy L = 10mH, RG = 25 Ω,TC=25℃ 500 mJ TJ, TSTG Operating Junction and Storage Temperature Range -55 to 150 ℃ Thermal Characteristics Symbol Parameter Typ Max Unit RθJC Thermal Resistance Junction-Case 0.35 -- ℃/ W RθJA Thermal Resistance Junction-Ambient 43.7 -- ℃/ W VDSS RDS(ON)(Typ ) ID 400V 0.4Ω 10A

+86-769-22857832 huixin@hxkj.hk Rev.01 Page 2 of 7 Electrical Characteristics ( TJ= 25℃unless otherwise specified) Symbol Parameter Min. Typ. Max. Units Test Conditions V(BR)DSS Drain- Source Breakdown Voltage 400 -- -- V VGS=0V,ID=250µA IDSS Zero Gate Voltage Drain Current (25℃) -- -- 1 µA VDS=400V,VGS=0V Zero Gate Voltage Drain Current (100℃) -- -- 100 µA VDS=400V,VGS=0V IGSS Gate to Source Forward Leakage -- -- 100 nA VGS=30V ,VDS=0V Gate to Source Reverse Leakage -- -- -100 VGS=-30V ,VDS=0V VGS(TH) Gate Threshold Voltage 2 3 4 V VGS=VDS,ID=250µA RDS(on) Static Drain- to- Source On- Resistance -- 0.4 0.46 Ω VGS=10V,ID=5A Dynamic Electrical Characteristics Ciss Input Capacitance -- 1370 -- pF VGS=0V VDS=25V f=1MHz Coss Output Capacitance -- 126 -- Crss Reverse Transfer Capacitance -- 2 -- Qg Total Gate Charge -- 24.5 -- nC VDS=320V ID=10A VGS=10V Qgs Gate- to- Source Charge -- 8 -- Qgd Gate-to-Drain(" Miller") Charge -- 6 -- Switching Characteristics td(ON) Turn- on Delay Time -- 15 -- nS VDS=400V ID=10A VGS=10V trise Rise Time -- 90 -- td(OFF) Turn- OFF Delay Time -- 80 -- tfall Fall Time -- 80 -- Source- Drain Diode Characteristics VSD Diode Forward Voltage -- -- 1.2 V IF=10A,VGS=0V trr Reverse Recovery Time -- 280 -- nS VGS=0V,IF=10A di/dt=100A/µsQrr Reverse Recovery Charge -- 2.5 -- uC

+86-769-22857832 huixin@hxkj.hk Rev.01 Page 3 of 7 Typical Characteristics

+86-769-22857832 huixin@hxkj.hk Rev.01 Page 4 of 7

+86-769-22857832 huixin@hxkj.hk Rev.01 Page 5 of 7

+86-769-22857832 huixin@hxkj.hk Rev.01 Page 6 of 7 Test ircuits and Waveforms

+86-769-22857832 huixin@hxkj.hk Rev.01 Page 7 of 7 Package outline drawing (TO-220 Unit: mm ) Symbol unit(mm) MIN MAX A 9.96 10.4 B 14.7 16.0 B1 8.82 9.60 C 4.24 4.67 C1 2.28 2.88 D 1.15 1.40 E 0.70 0.90 F 0.40 0.60 G 1.20 1.75 H 3.20 4.00 L 12.95 13.97 N 2.34 2.74 Q 2.44 3.04 3.74 3.94