GTC9922E GTM | Alldatasheet
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ISSUED□DATE□ □ :2007/01/25□ REVISED□DATE□:□ GGTT CC 99 99 22 22 EE□□ N-CHANNEL□ENHANCEMENT□MODE□POWER□MOSFET□ Description□ The□GTC9922E□provides□the□designer□with□the□best□combination□of□fast□switching,□ruggedized□device□design,□ ultra□low□on-resistance□and□cost-effectiveness.□ Features□ *Low□on-resistance□ *Optimal□DC/DC□battery□application□ *Surface□mount□package□ Package□Dimensions□ Absolute□Maximum□Ratings□ Parameter□ Symbol□ Ratings□ Unit□ Drain-Source□Voltage□ VDS□ 20□ V□ □ Gate-Source□Voltage□ VGS□ ±12□ V□ □ Continuous□Drain□Current3,□VGS@4.5V□ ID□@TA=25:□ 6.8□ A□ □ Continuous□Drain□Current3,□VGS@4.5V□ ID□@TA=70:□ 5.4□ A□ □ Pulsed□Drain□Current1□ IDM□ 25□ A□ □ Linear□Derating□Factor□ □ 0.008□ W/:□ □ Operating□Junction□and□Storage□Temperature□Range□ Tj,□Tstg□ -55□~□+150□ :□ □ Thermal□Data□ Parameter□ Symbol□ Value□ Unit□ Thermal□Resistance□Junction-ambient3□ □ □ Max.□ Rthj-a□ 125□ /:W□ □ Pb□Free□Plating□Product□
ISSUED□DATE□ □ :2007/01/25□ REVISED□DATE□:□ Electrical□Characteristics□(Tj□=□25::::□unless□otherwise□specified)□ Parameter□ Symbol□ Min.□ Typ.□ Max.□ Unit□ Test□Conditions□ Drain-Source□Breakdown□Voltage□ BVDSS□ 20□ -□ -□ V□ □ VGS=0,□ID=250uA□ □ Breakdown□Voltage□Temperature□Coefficient□ æBVDSS□/æTj□ -□ 0.05□ -□ V/:□ □ Reference□to□25 ,□I:D=1mA□ □ Gate□Threshold□Voltage□ VGS(th)□ 0.5□ -□ 1.2□ V□ □ VDS=VGS,□ID=1mA□ □ Forward□Transconductance□ gfs□ -□ 22□ -□ S□ □ VDS=4.5V,□ID=6A□ □ Drain-Source□Leakage□Current(Tj=25 )□: -□ -□ 10□ uA□ □ VDS=20V,□VGS=0□ □ Drain-Source□Leakage□Current(Tj=70 ):□ IDSS□ Static□Drain-Source□On-Resistance2□ RDS(ON)□ -□ -□ 20□ m□ □ VGS=2.5V,□ID=4A□ □ Gate-Source□Charge□ Qgs□ -□ 3□ -□ nC□ □ ID=6A□ □ VDS=16V□ □ VGS=4.5V□ □ Turn-on□Delay□Time2□ Td(on)□ -□ 11□ -□ Turn-off□Delay□Time□ Td(off)□ -□ 47□ -□ ns□ □ VDS=15V□ □ ID=1A□ □ VGS=4.5V□ □ RG=3.3□ □ RD=15□ □ Input□Capacitance□ Ciss□ -□ 1730□ 2770□ Output□Capacitance□ Coss□ -□ 280□ -□ Reverse□Transfer□Capacitance□ Crss□ -□ 240□ -□ pF□ □ VGS=0V□ □ VDS=20V□ □ f=1.0MHz□ □ Source-Drain□Diode□ Parameter□ Symbol□ Min.□ Typ.□ Max.□ Unit□ Test□Conditions□ Forward□On□Voltage2□ VSD□ -□ -□ 1.2□ V□ □ IS=0.84A,□VGS=0V□ □ Reverse□Recovery□Charge□ Qrr□ -□ 18□ -□ nC□ □ IS=6A,□VGS=0V□ □ dI/dt=100A/s□ □ Notes:□1.□Pulse□width□limited□by□Max.□junction□temperature.□ □
ISSUED□DATE□ □ :2007/01/25□ REVISED□DATE□:□ Characteristics□Curve□ Fig□1.□Typical□Output□Characteristics□ Fig□2.□Typical□Output□Characteristics□ Fig□3.□On-Resistance□v.s.□Gate□Voltage□ Fig□4.□Normalized□On-Resistance□ v.s.□Junction□Temperature□ Fig□6.□Gate□Threshold□Voltage□v.s.□ Junction□Temperature□ Fig□5.□Forward□Characteristics□of□
ISSUED□DATE□ □ :2007/01/25□ REVISED□DATE□:□ □ □ Important□Notice:□ □ All□rights□are□reserved.□Reproduction□in□whole□or□in□part□is□prohibited□without□the□prior□written□approval□of□GTM.□ □ GTM□reserves□the□right□to□make□changes□to□its□products□without□notice.□ □ GTM□semiconductor□products□are□not□warranted□to□be□suitable□for□use□in□life-support□Applications,□or□systems.□ □ GTM□assumes□no□liability□for□any□consequence□of□customer□product□design,□infringement□of□patents,□or□application□assistance.□ Head□Office□And□Factory:□ □ China:□(201203)□No.255,□Jang-Jiang□Tsai-Lueng□RD.□,□Pu-Dung-Hsin□District,□Shang-Hai□City,□China□ Fig□7.□Gate□Charge□Characteristics□ Fig□8.□Typical□Capacitance□Characteristics□ Fig□9.□Maximum□Safe□Operating□Area□ Fig□10.□Effective□Transient□Thermal□Impedance□ Fig□11.□Switching□Time□Waveform□ Fig□12.□Gate□Charge□Waveform□