GT8Q101

GT8Q101 TOSHIBA | Alldatasheet

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TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N-CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS Unit in mm MOTOR CONTROL APPLICATIONS Isomax 43.2402 ¢ High Input Impedance ea AS a e@ High Speed : tp=0.5us (Max.) E ake 3 © Low Saturation Voltage : VCE (sat) =4.0V (Max.) “Hy tH “se @ Enhancement-Mode 2.0403 i | $ MAXIMUM RATINGS (Ta = 25°C) 107 02s | 8 —— V CHARACTERISTIC SYMBOL | RATING | UNIT || =**% SA8 502 Bl so} Collector-Emitter Voltage VoES 1200 3) * 4 HM z , i “Ls art [2 Gate-Emitter Voltage Vors & [we fiw | 3s | Collector Current c c A 1. GATE 2. COLLECTOR (HEAT SINK) Collector Power Dissipation P 100 w 3._ EMITTER (Te=25°C) c JEDEC = Junetion Temperature Storage Temperature Range —55~150 TOSHIBA —_2-16C1C Weight : 4.6g ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC SYMBOL TEST CONDITION xan. | rye. [max.|unrr] Gate Leakage Current Icgs _|VoE=+20V, VoR=0 | — | — | +500 Collector Cut-off Current Tors _|Vop=1200V, Van=0 [| — | — | 10] ma | Gate-Emitter Cut-off Voltage [Von (orr)|Io=8mA, Von=5V [30] — | eo] v | Collector-Emitter _ _ Saturation Voltage VcE (sat) [1C=8A, VGE=15V | — | s0] 40] Vv Input Capacitance VcE=10V, VgE=0, f=1MHz | — | 1100 | — | oF | vgur |= | 03] | —15V 2 2610016002 @ TOSHIBA is continually working to improve the quality and the reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility ‘of the buyer, when utilizing TOSHIBA products, to observe standards of safety, and to avoid situations in which a malfunction or failure of a TOSHIBA product could cause loss of human life, bodily injury or damage to property. In developing your, designs, please ensure that TOSHIBA. products are, used within specified Sperating ranges os fet forth in the west dean products specications, Also, Please keep im mind she precautigns and conditions set forth in the TOSHIBA Semiconductor Reliability Handbook. © The information contained herein is presented only as a guide for the applications of our products. No. responsibility is assumed by TOSHIBA CORPORATION for any Inesingersents of ristectsal Bropernyor exnsy rants EF tse inva parties ben tay Fesui hom Ns use. We Teanse is grates by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. @ The information contained herein is subject to change without notice. 1997-02-03 1/3

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COLLECTOR-EMITTER VOLTAGE Vcg (V) COLLECTOR-EMITTER VOLTAGE Vcg (V) mms 1997-02-03 3/3