GT8J101 TOSHIBA | Alldatasheet
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TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N-CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS Unit in mm MOTOR CONTROL APPLICATIONS =S1 4 @ High Input Impedance Ea = , AL als @ High Speed : tp=0.35us (Max.) Z || Pa © Low Saturation Voltage : VCR (sat)=4.0V (Max.) | Lt 727 | @ —Enhancement-Mode Y z| + MAXIMUM RATINGS (Ta = 25°C) oxseostl | | Ey | CHARACTERISTIC SYMBOL | RATING | UNIT || 2set025| | [254025 Collector-Emitter Voltage VcES [ 60 | v | 3 —|42 Gate-Emitter Voltage VGEs is 3 ee Collector Current c c A 1. GATE 2, COLLECTOR Collector Power Dissipation P w 3. EMITTER (Te=25°C) Cc JEDEC = Junetion Temperature Storage Temperature Range —55~150 TOSHIBA —_2-10R1C Weight : 1.7g¢ ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC SYMBOL TEST CONDITION | xan. | rye. [max.|unrr] Von==20V, Vou=0 | = | — | 600] na | Collector Cut-off Current Tors _|VoR=600V, Vgn=0 [| — | — | 10] ma | |Gate-Bmitter Cutoff Voltage [VaROFR|io=amA,Vor=5v_ | 3.0 | — | ol v | Collector-Emitter _ _ Saturation Voltage VcE (sat) |1C=8A, VGE=15V | — | so] 40] Vv Input Capacitance Vor=10V, Ven=0, f=1maz | — | 650] — | oF | switching Yet [= [oar ono : 15V . us —15V 2610016002 malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility ‘of the buyer, when utilizing TOSHIBA products, to observe standards of safety, and to avoid situations in which a malfunction or failure of a TOSHIBA product could cause loss ‘of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified Operating rarer as fot forth in the toe raceme products specticntione. alse, Pleads Leap in mind the praceuticns snd’ condivons see torte in the TOSHIBA Semiconductor Reliability Handbook. @ The information contained herein is presented only as a guide for the applications of our products. No. responsibilty is assumed by, TOSHIBA CORPORATION for ary Intsingersents of misllgctual property or ether rignts Ef tne ira parties Which tay resui from Is use. WO lconse is Gramted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. @ The information contained herein is subject to change without notice. 1997-02-03 1/3
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SWITCHING TIME - Ic SWITCHING TIME - Rg COMMON EMITTER common emirrer |_| | |T{il] |] Vec=300V Voo=300V, Vag= £15V, Rg=3002 vog=+15v me iE e RE] | fpf a 0.8| Te= 25°C ee z= ee ‘oft 2 a 274i 03 == eo) bev per 5 os} rea Zz toe | 2 | | Te eT 2 Let |. ee Soe E am 5 ai | a ———s. sl | a | es a ed 0.03 a ° 2 4 6 8 10 10 30 100 300 1000 3000 COLLECTOR CURRENT Ig (A) GATE RESISTANCE Rg (Q) C - Vor Fe ee R — -t a = 8 FS te=2c | 500) SE cies z Setiisetii meet meen aa
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1 3 10 30 100 300 1000 0 100 200 300 400 «500 600 700 COLLECTOR-EMITTER VOLTAGE Vcg (V) COLLECTOR-EMITTER VOLTAGE Veg (V) 1997-02-03 3/3