GT8G136 TOSHIBA | Alldatasheet

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TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT8G136 Strobe Flash Applications

  • Compact and Thin (TSSOP-8) package
  • Enhancement-mode
  • Peak collector current: IC = 150 A (max) (@V GE=3.0V(min),Ta=70℃(max))/ Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-emitter voltage VCES 400 V DC V GES ± 6 Gate-emitter voltage Pulse V GES ± 8 V Collector current Pulse (Note 1) ICP 150 A (Note 2a) P C (1) 1.1 W Collector power dissipation（t＝10 s） (Note 2b) P C (2) 0.6 W Junction temperature Tj 150 °C Storage temperature range Tstg −55~150 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause th is product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/vol tage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Thermal Characteristics Marking (Note 3) Note : For (Note 1) , (Note 2a) , (Note 2b) and (Note 3) , Please refer to the next page. Unit: mm JEDEC ― JEITA ― TOSHIBA － Weight: 0.035 g (typ.) Circuit Configuration Characteristics Symbol Rating Unit Thermal resistance , junction to ambient (t = 10 s) (Note2a) Rth (j-a) (1) 114 °C/W Thermal resistance , junction to ambient (t = 10 s) (Note2b) R th (j-a) (2) 208 °C/W 1,2 EMITTER

3 EMITTER (Gate drive connection)

4 G A T E

5,6,7,8 COLLECTOR Lot No. 8G136 A line indicates lead (Pb)-free package or lead (Pb)-free finish. Part No. (or abbreviation code) 8 7 5 6 1 2 3 4

Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current IGES V GE = ± 6 V, VCE = 0 ⎯ ⎯ ± 10 μA Collector cut-off current ICES V CE = 400 V, VGE = 0 ⎯ ⎯ 10 μA Gate-emitter cut-off voltage VGE (OFF) I C = 1 mA, VCE = 5 V 0.65 1.0 1.35 V Collector-emitter saturation voltage V CE (sat) I C = 150 A, VGE = 3 V ⎯ 3.5 ⎯ V Input capacitance Cies V CE = 10 V, VGE = 0, f = 1 MHz ⎯ 2500 ⎯ pF Rise time tr ⎯ 1.5 ⎯ Turn-on time ton ⎯ 1.7 ⎯ Fall time tf ⎯ 1.6 ⎯ Switching time Turn-off time toff ⎯ 1.9 ⎯ μs Note Note 1: Please use devices on condition that the junction temperature is below 150°C. Repetitive rating: pulse width limited by maximum junction temperature. Note 2a : Device mounted on Note 2b : Device mounted on a g l a s s - e p o x y b o a r d ( a ) a g l a s s - e p o x y b o a r d ( b ) Note 3: ○ on lower right of the marking indicates Pin 1. ※ Pb-Free Finish (Only a coating lead terminal) : It is marking about an underline to a week of manufacture mark. FR-4 25.4 × 25.4 × 0.8 (unit : mm) FR-4 25.4 × 25.4 × 0.8 (unit : mm) ※ Weekly code: (Three digits) Week of manufacture (01 for first week of year, continues up to 52 or 53) Year of manufacture (One low-order digits of calendar year) f o r G A T E f o r C O L L E C T O R for EMITTER f o r C O L L E C T O R f o r E M I T T E R for GATE VIN: t r < = 100 ns t f < = 100 ns Duty cycle < = 1% 0 51 Ω ≒300V

This device is MOS gate type. Therefore , please care of a protection from ESD in your handling . Caution in design You should be design dV/dt value under Icp=150A is below 400 V/μs when IGBT turn off under Ta=70℃ . You should be design to don’t flow collector current through terminal number 3 .

  • definition of dv/dt The slope of VCE from 30v to 90v (attached figure.1) dv/dt = (90V-30V) / ( ⊿t) = 6 0 V / ⊿t
  • w a v e f o r m ●waveform (expansion)
  • Gate drive connection driver 1,2 RG RGE 5,6,7,8 0V, 0A IC(end) IC VCE dv/dt period IC(begin) 90V 30V VCE

Collector-emitter voltage V CE (V) Collector current I C (A) Collector-emitter voltage V CE (V) IC – VCE Collector current I C (A) Collector-emitter voltage V CE (V) IC – VCE Collector current I C (A) IC – VGE IC – VCE 200 0 1 2 3 4 5 120 160 VGE = 4.0 V 3.5 3.0 2.5 Common emitter Ta = −10°C 200 0 1 2 3 4 5 120 160 VGE = 4.0 V 3.5 3.0 2.5 Common emitter Ta = 25°C 200 0 1 2 3 4 5 120 160 VGE =4.0 V 3.5 3.0 2.5 Common emitter Ta[ = 70°C Collector current I C (A) Gate-emitter voltage V GE (V) 160 0 1 2 3 4 5 120 Ta = −10°C Common emitter VCE = 5 C – VCE 10000 1000 100 1000 10 100 Common emitter VGE = 0 V f = 1 MHz Ta = 25°C Cies Coes Cres Capacitance C (pF) Collector-emitter voltage V CE (V) VCE, VGE – QG Collector-emitter voltage V CE (V) 100 200 300 400 600 500 Gate-emitter voltage V GE (V) 0 30 40 50 Common emitter VCC = 300 V RL = 2.0 Ω Ta = 25°C VCE VGE Gate charge Q G (nC)

VCE = 300 V VGE = 3 V IC = 150 A Ta ton toff tf tr 200 0 50 100 150 0.1 Common emitter VCC = 300 V VGE = 3 V RG = 51 Ω Ta = 25°C tr ton Switching Time – RG Switching time ( μs) Switching time ( μs) Gate resistance R G ( Ω) Collector current I C (A) Main capacitance C M ( μF) Peak collector current I CP (A) Maximum Operating Area 200 160 120 0 2 4 6 8 Ta 200 800 600 400 200 0 40 80 120 160 VCM = 350 V Ta < = 70°C VGE = 3.0 V 33 Ω < = RG < = 300 Ω Minimum Gate Drive Area Gate-emitter voltage V GE (V) Peak collector current I CP (A) tf toff Switching Time – IC Ta

RESTRICTIONS ON PRODUCT USE 20070701-EN

  • The information contained herein is subject to change without notice.
  • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity an d vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA produc ts, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIB A products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconduct or Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.
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