GT8G121 TOSHIBA | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 4
Technical content
TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL MOS TYPE STROBE FLASH APPLICATIONS Unit in mm somax, 3 e 4th Generation (Trench Gate Structure) [ezsoq| - Saar © — Enhancement-Mode COLLECTOR % . 0.40.15 LJ $3 @ Low Saturation Voltage GATE o.smax. ff i ¥ 5 osmax. : VCE (sat) = 7 V (Max.) (@Ig = 150 A) teas od z 23, Baa @ 4V Gate Drive S44 EMITTER [a= a} =] Ts (e) x ~ gomax,, 3 MAXIMUM RATINGS (Ta = 25°C) 5.240.2| SI a CHARACTERISTIC SYMBOL 3 3 Collector-Emitter Voltage Voss [| 400 | V_ |] 2sto.s a = VoEs 1015 “+ Jp GateEmitter Voltage [Pulse | Vans ee = = Collector Carvent =n: Collector Power Ta = 25°C 2] x €bttector Dissipation Te=25°C| Po [ 20 =| Ww 3, GUnTER TOSHIBA (A) 2-7B5C (B) 2-7B6C ELECTRICAL CHARACTERISTICS (Ta = 25°C) Weight : 0.36g CHARACTERISTIC SYMBOL TEST CONDITION [xay. | rye. [max.[unrr] Gate Leakage Current | Ices [Vcr =6V, Vor = 0 [| — | — | 10] pA | Collector Cut-off Current Vor = 400V, Van = 0 { — | — | 10] za | Gate-Emitter Cut-off Voltage |VG@E (OFFIC = 1mA, VcR = 5V [os | — | 15][ v | Collector-Emitter Saturation _ _ esa ri f= tos vores oma | — | 38 >| : . Vcr = 10V, VGE = 9, Input Capacitance Cies f= 1MHz 3800 pF avy K i = [2st — | 510 Switching [Turn-on Time [ton ly 9S < goond ”N, fs [= | 25 = | Time Fall Time | te |” t= 100ns [= faz} = |“ Duty cycle S 1% S00V FT 2a = | Thermal Resistance P Rng [a 625 PP These devices are MOS type. Users should follow proper ESD Handling Procedures. Operating condition of turn-off dv/dt should be lower than 400 V/ ys. o61001EAA @ TOSHIBA is continually working to improve the quality and the reliability of its products. Nevertheless, semiconductor devices in general can malfunction gr fal due to their inherent electrical sensitivity and vulnerability to physcal stress. Its the responsiblity of the buyer, when ulizing TOSHIBA products, to observe standards of safety, and to avoid situations in which @ malfunction or failure of @ TOSHIBA product could cause. loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent products specifications. Also, please keep in mind the precautions and conditions set forth in the TOSHIBA Semiconductor Reliability Handbook. © ‘he information contained herein is resented only as a guide for the applications of our products. No responsibilty is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. @ The information contained herein is subject to change without notice. 1999-06-21 1/4
200 Io - Vor 200 to = Vcr
_ | geunves Wy _ | seer YA, ~ Te = ~40°C Vl _ = Te = 25°C Poe Ze 2 wt | | Yet hs 2 [ITT Tyee 2 °C) TTT yer EACH] | HAS g Z g Y 2 |. | fees 2 | | Bera
8 CTIA | [vee =20v | 8 TTF ee = 209 |
A oe | (> 2g a a a a a a COLLECTOR-EMITTER VOLTAGE Vcg (V) COLLECTOR-EMITTER VOLTAGE Veg (V)
200 Ic = VCE 200) to = Yor
genre / genx , 3 te-roe | | [| KAA z Te = 125°C Z| J \\Z eT TET yas 2 “HALL Ae (pecces, 4030 Geaeeey 2 Y fy“ a g on 7 é wo |_| | Aer oon Zanes z Co Aa 2, | Ber 3 a ny a 8 eT eee] _LATTTT TTT LATTE et a a eo i a a COLLECTOR-EMITTER VOLTAGE Veg (V) COLLECTOR-EMITTER VOLTAGE Vcg (V)
00 Ic - VGE 1 VCE (sat) — Te
a oe , | ee EEEEEEHH i z Zip veerey | | | | os wo || 2 | vore=av FP i i i as, 7 A gh seat J eo n/a ab EERE eee 4 120] < — COCO Peeper eee ee Be CRE Cee e “Li | TTT TT] ge eee eee ® |TTPLLif Lo i 2 y, ee a ee a” A a Lt tA a a a °y 1 2 3 + 5 oso 49 0 40 80120 60 GATE-EMITTER VOLTAGE VgE (V) CASE TEMPERATURE Te (°C) 1999-06-21 2/4
a VCE - VGE cos VCE — VGE & & Fie > ees g IAIN | 8 TARAS e Jit it Nek & feof PLS Se ee ee PASS | ESS 2 | TT] 2 | | ae fT TTP r rrr | oe El } | | | | | ty yy e [itty iri y te
3 LLEPE EET Tt | gs Lf _TITitTitt)
GATE-EMITTER VOLTAGE Vgg (V) GATE-EMITTER VOLTAGE Vg (V) c 6 VcE - VGE cos Vcr - VGE = Teomos TTT TUS. < "Teomox | T TT VY g jeter 3 [se E-TAERY
8 BEE ke= e LL TTT Tp eels
PSE | -EEECHENSSES BPN Pe ge J Nee TT
2 Lit tt | | Pre 2 Lit ttt | Pr
Pr | PE E g | 3 gs -LLTTi tt tt | a LLtTititT iit | | a a a a ar | GATE-EMITTER VOLTAGE VgE (V) GATE-EMITTER VOLTAGE VgE (V) C - Vcr p ESE Be | Con CCC = — P re a oR ge oS TT 2 jf. > > Py gol EEE SSS Coe ff connsow a a a | af ie PR EMITTER e Jo [Cote PTH vee cov ee ne oe LTT TTA t= o Lf ees) 10) os 0 3010950 eB 10 3050-10000 STD 000 CASE TEMPERATURE Te (°C) COLLECTOR-EMITTER VOLTAGE Vcg (V) ins “8-0-2 SE
SWITCHING TIME — Rg VcE, VGE - 9G
10 TTT 7 = 500 coMMON as
_ Moan ann ‘oft tu} > 400) Rp = 2.00 s 8 & fictsoa” TT eae g fesse [ [TT tf = e peere [a 1 For +[} | | tor |, 8 e | Le eS ae 3 >a ee ae 2 [kere] | [ i yg ‘PATI TT) AEESEEEE E ee ° GATE RESISTANCE Rg (Q) GATE CHARGE Qg (nC) SWITCHING TIME - Icp MAXIMUM OPERATING AREA “EBE=== = “TTLIVNITILL st a A a Oa a € FR EE ic aaa 2 eS Se cod = UPPER He | FT TT TIX ELT LI : P>= can : N\\ GCN SON g FERC ESE I
2 ESR “CN
2 See FC) common g Vou = 3809 | ty
% ol | toon stov Z 2} mare CA yy yecesey gM rswe,, FT | | Rg =510 = GE=*o0 eC LEET TT TET | see vss TTT TT | “0 20 40 60 80 100 120 «140 160 % 40 80 120 160 200 COLLECTOR CURRENT Ig (A) COLLECTOR PEAK CURRENT Icp (A) MINIMUM GATE DRIVE AREA 200) 2 [][ | Ty yf ft ee a 2 io |_| an as |i | iy tt yf ee s , 1 tf | i | ee eee ef | Yi i i tt) 0 4 GATE-EMITTER VOLTAGE VgE (V) 1999-06-21 4/4