GT80J101 TOSHIBA | Alldatasheet
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TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N-CHANNEL MOS TYPE Unit in mm HIGH POWER SWITCHING APPLICATIONS. 20.5MAX. 3.3+0.2 + High Input Impedance = Em « High Speed 2 tp=0.40ys (Max.) * ¢ Low Saturation Voltage : VCK(sat)=3.5V (Max.) ba al 31 « Enhancement-Mode 25 be 30 q g MAXIMUM RATINGS (Ta = 25°C) 1.07835 . S452018 | §454018 CHARACTERISTIC SYMBOL | RATING 7 : Collector-Emitter Voltage vers | 600 | v | | # 24 Gate-Emitter Voltage Vcrs , = ee Collector Current c A 1. GATE Collector P Dissipati 3. EMITTER ‘ollector Power Dissipation Storage Temperature Range —55~150 TOSHIBA _2-21F1C [Screw Torque | em] Weight: 9.75e ELECTRICAL CHARACTERISTIC (Ta = 25°C) CHARACTERISTIC SYMBOL TEST CONDITION Gate Leakage Current Iggs | Vor=+20V, Von=0 | — | — [+500 Collector Cut-Off Current Vor=600V, Vap=0 | — | — | 10] ma | Gate-Emitter Cut-off Voltage |VGR(orr) | Ic=80mA, VoR=5V | so | — | eo] v | Collector-Emitter Saturation Ig=10A, Vgp=15V [= | -[ 20], Voltage Vorisat)) |1c=80A, Von=15v_— | — | 25| 35 | . Vcr=10V, Var=0, Input Capacitance Cies f=1MHz pF Vous] — | 03| 06 | Switching isv—Vins30jV 8 [| 05] 08] Time Fall Time ot]; o |_| 0.25 | 0.40 | Thermal Resistance [ Rago [oT = | =f 0.625 ger0016A42 @ TOSHIBA is continually working to improve the quality and the reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility ‘of the buyer, when utilizing TOSHIBA products, to observe standards of safety, and to avoid situations in which a malfunction or failure of a TOSHIBA product could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified Sparating ranjer at tet orth in the ost recur products spechieations, Alte, Meade keepin mind the precautions and conditions fet tors the TOSHIBA Semiconductor Reliability Handbook. @ The information contained herein is presented only as a guide for the applications of our products. No. responsiblity is, assumed by, TOSHIBA CORPORATION for any Infuingerments of ristectsal Bropernyor exh rants EP tse inva paries bien tay Fesui hom Is use. Wo Neanse is grantee by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. @ The information contained herein is subject to change without notice. 1997-10-13 1/4
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