GT60M323

GT60M323 TOSHIBA | Alldatasheet

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Technical content

TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT60M323 Voltage Resonance Inverter Switching Application

• Enhancement mode type
• High speed : t f = 0.09 µs (typ.) (IC = 60 A)
• Low saturation voltage : V CE (sat) = 2.3 V (typ.) (IC = 60 A)
• FRD included between emitter and collector
• TO-3P(LH) (Toshiba package name) Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-emitter voltage V CES 900 V Gate-emitter voltage V GES ±25 V @ Tc = 100°C 31 Continuous collector current @ Tc = 25°C IC A Pulsed collector current I CP 120 A DC I F 15 Diode forward current Pulsed I FP 120 A @ Tc = 100°C 80 Collector power dissipation @ Tc = 25°C PC 200 W Junction temperature T j 150 °C Storage temperature range T stg −55 to 150 °C Thermal Characteristics Characteristics Symbol Max Unit Thermal resistance (IGBT) R th (j-c) 0.625 °C/W Thermal resistance (diode) R th (j-c) 4.0 °C/W Equivalent Circuit Marking Unit: mm JEDEC ― JEITA ― TOSHIBA 2-21F2C Weight: 9.75 g (typ.) Gate Emitter Collector GT60M323 TOSHIBA JAPAN Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. Part No. (or abbreviation code)

Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current I GES V GE = ±25 V, VCE = 0 ― ― ±500 nA Collector cut-off current I CES V CE = 900 V, VGE = 0 ― ― 0.1 mA Gate-emitter cut-off voltage V GE (OFF) I C = 60 mA, VCE = 5 V 4.0 ― 7.0 V Collector-emitter saturation voltage V CE (sat) I C = 60 A, VGE = 15 V ― 2.3 2.8 V Input capacitance C ies V CE = 10 V, VGE = 0, f = 1 MHz ― 4200 ― pF Rise time tr ― 0.25 ― Turn-on time t on ― 0.37 ― Fall time t f ― 0.09 0.20 Switching time Turn-off time t off Resistive Load VCC = 600 V, IC = 60 A VGG = ±15 V, RG = 51 Ω (Note 1) ― 0.40 ― µs Diode forward voltage V F I F = 15 A, VGE = 0 ― 1.1 1.9 V Reverse recovery time t rr I F = 60 A, di/dt = −20 A/µs ― 1.4 3.0 µs Note 1: Switching time measurement circuit and input/output waveforms 10% 90% VGE VCE IC td (off) toff tr ton tf 10% 10% 90% 90% RG VCC RL

Collector-emitter saturation voltage VCE (sat) (V) Collector current I C (A) Collector-emitter voltage V CE (V) IC – VCE Collector current I C ( A ) Collector-emitter voltage V CE (V) IC – VCE Collector current I C (A) Collector-emitter voltage V CE (V) IC – VCE Collector current I C ( A ) Gate-emitter voltage V GE (V) IC – VGE Case temperature Tc (°C) VCE (sat) – Tc 0 1 2 3 4 5 100 120 VGE = 20 V Common emitter Tc = -40°C VGE = 20 V 8 0123 4 5 100 120 Common emitter Tc = 25°C VGE = 20 V 10 0 1 2 3 4 5 100 120 Common emitter Tc = 125°C Tc = 125°C −40 0246 8 1 0 Common emitter VCE = 5V IC = 10 A −60 −20 20 60 100 140 Common emitter VGE = 15 V

Collector current I C (A) Gate-emitter voltage V GE (V) Gate charge Q G ( n C ) VCE, VGE – QG Collector-emitter voltage V CE ( V ) Gate resistance R G ( Ω) Switching Time – RG Switching time ( µs) Collector current I C (A) Switching Time – IC Switching time ( µs) Capacitance C (pF) Collector-emitter voltage V CE (V) C – V CE Collector- emitter voltage V CE (V) Safe Operating Area Collector-emitter voltage V CE (V) Reverse Bias SOA Collector current I C (A) VCE = 150 V 0 60 120 180 240 100 150 200 100 50 Common emitter RL = 2.5 Ω Tc = 25°C Cres 1 10 100 1000 10000 100 1000 10000 Coes Cies Common emitter VGE = 0 f = 1 MHz Tc = 25°C 0.01 1 10 100 1000 0.1 ton toff tr tf Common emitter VCC = 600 V IC = 60 A VGG = ±15 V Tc = 25°C 0.01 01 0 5 0 7 0 0.1 toff ton tf tr 20 30 40 60 Common emitter VCC = 600 V RG = 51 Ω VGG = ±15 V Tc = 25°C 1 10 100 1000 10000 100 1000 10 µs* 1 ms* 100 µs* 10 ms IC max (pulsed)* IC max (continuous) DC operation * Single non-repetitive pulse Tc = 25°C Curves must be derated linearly with increase in temperature. 1 10 100 1000 10000 100 1000 Tj <= 125°C VGG = 20 V RG = 10 Ω

Case temperature T c (°C) ICmax – T c Maximum DC collector current I Cmax (A) Pulse width t w (s) Forward voltage V F (V) IF – VF Forward current I F (A) Peak reverse recovery current I rr (A) Forward current I F ( A ) trr, Irr – IF Rth (t) – tw Transient thermal impedance R th (t) (°C/W) Reverse recovery time t rr ( µs) Peak reverse recovery current I rr (A) di/dt (A/ µs) trr, Irr – di/dt Reverse recovery time t rr ( µs) 25 50 100 125 150 Common emitter VGE = 15 V 10−2 10−5 10−4 10−1 10 0 10 2 100 101 102 Tc = 25°C 10−1 10−210−3 101 Diode stage IGBT stage 0 0.4 1.6 2.0 2.4 100 1.2 0.8 −40 Tc = 125°C Common collector 0.8 02 0 8 0 1.2 1.4 1.6 1.0 60 40 trr Irr Common Collector di/dt = −20 A/µs Tc = 25°C 0.0 0 40 180 0.8 1.2 1.6 0.4 160 80 trr Irr 120 Common collector IF = 60 A Tc = 25°C

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