GT50J325

GT50J325 TOSHIBA | Alldatasheet

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TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT50J325 High Power Switching Applications Fast Switching Applications /Gb7/G20The 4th generation /Gb7/G20Enhancement-mode /Gb7/G20Fast switching (FS): Operating frequency up to 50 kHz (reference) /Gb7/G20High speed: tf = 0.05 µs (typ.) /Gb7/G20Low switching loss : Eon = 1.30 mJ (typ.) : E off = 1.34 mJ (typ.) /Gb7/G20Low saturation Voltage: VCE (sat) = 2.0 V (typ.) /Gb7/G20FRD included between emitter and collector Maximum Ratings (Ta /G3d/G3d/G3d/G3d 25°C) Characteristics Symbol Rating Unit Collector-emitter voltage V CES 600 V Gate-emitter voltage V GES /Gb120 V DC I C 50 Collector current 1 ms I CP 100 A DC I F 50 Emitter-collector forward current 1 ms I FM 100 A Collector power dissipation (Tc /G3d 25°C) PC 240 W Junction temperature T j 150 °C Storage temperature range T stg /G2d55 to 150 °C Thermal Characteristics Characteristics Symbol Max Unit Thermal resistance (IGBT) R th (j-c) 0.521 °C/W Thermal resistance (diode) R th (j-c) 2.30 °C/W Equivalent Circuit Unit: mm JEDEC ― JEITA ― TOSHIBA 2-21F2C Weight: 9.75 g Gate Emitter Collector

Electrical Characteristics (Ta /G3d/G3d/G3d/G3d 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current I GES V GE /G3d /Gb120 V, VCE /G3d 0 /Gbe /Gbe /Gb1500 nA Collector cut-off current I CES V CE /G3d 600 V, VGE /G3d 0 /Gbe /Gbe 1.0 mA Gate-emitter cut-off voltage V GE (OFF) I C /G3d 5 mA, VCE /G3d 5 V 3.5 /Gbe 6.5 V /G20 Collector-emitter saturation voltage V CE (sat) I C /G3d 50 A, VGE /G3d 15 V /Gbe 2.0 2.45 V /G20 Input capacitance C ies V CE /G3d 10 V, VGE /G3d 0, f /G3d 1 MHz /Gbe 7900 /Gbe/G20pF Turn-on delay time t d (on) /Gbe 0.09 /Gbe Rise time t r /Gbe/G200.07 /Gbe/G20 Turn-on time t on /Gbe/G200.24 /Gbe Turn-off delay time t d (off) /Gbe 0.30 /Gbe/G20 Fall time t f /Gbe/G200.05 /Gbe/G20 Switching time Turn-off time t off /Gbe/G200.43 /Gbe/G20 /G6ds Turn-on switching loss Eon /Gbe/G201.30 /Gbe/G20 Switching loss Turn-off switching loss Eoff Inductive load VCC /G3d 300 V, IC /G3d 50 A VGG /G3d /G2b15 V, RG /G3d 13 /G57 (Note 1) (Note 2) /Gbe/G201.34 /Gbe/G20 mJ Peak forward voltage V F I F /G3d 50 A, VGE /G3d 0 /Gbe /Gbe 4.2 V Reverse recovery time t rr I F /G3d 50 A, di/dt /G3d /G2d100 A//G6ds /Gbe 65 /Gbe ns Note 1: Switching time measurement circuit and input/output waveforms Note 2: Switching loss measurement waveforms 10% 90% VGE VCE IC Eoff E on 0 5% RG IC VCE L VCC /G2dVGE 10% 90% VGE VCE IC td (off) toff td (on) tr ton tf 10%10% 10% 90% 10% 90%

Collector-emitter voltage V CE (V) IC – VCE Collector current I C (A) Gate-emitter voltage V GE (V) VCE – VGE Collector-emitter voltage V CE (V) Gate-emitter voltage V GE (V) VCE – VGE Collector-emitter voltage V CE (V) Gate-emitter voltage V GE (V) VCE – VGE Collector-emitter voltage V CE (V) Gate-emitter voltage V GE (V) IC – VGE Collector current I C (A) Case temperature Tc (°C) VCE (sat) – Tc Collector-emitter saturation voltage V CE (sat) (V) 0 4 8 12 16 20 Common emitter Tc /G3d /G2d40°C 30 50 IC /G3d 10 A 100 0 4 8 12 16 20 Common emitter Tc /G3d 25°C 30 50 IC /G3d 10 A 100 0 4 8 12 16 20 Common emitter Tc /G3d 125°C 30 50 IC /G3d 10 A 100 0 4 8 12 16 20 /G2d40 Tc /G3d 125°C

100 Common emitter

/G2d60 /G2d20 20 60 100 140 IC /G3d 10 A

5 Common emitter

Tc /G3d 25°C

Collector current I C (A) Switching time t on, tr, td (on) – IC Switching time t on, tr, td (on) ( /G6ds) Gate resistance R G ( /G57) Switching time t off, tf, td (off) – RG Switching time t off, tf, td (off) ( /G6ds) Gate resistance R G ( /G57) Switching loss E on, Eoff – RG Switching loss E on, Eoff ( m J ) Gate resistance R G ( /G57) Switching time t on, tr, td (on) – RG Switching time t on, tr, td (on) ( /G6ds) Collector current I C (A) Switching loss E on, Eoff – IC Switching loss E on, Eoff ( m J ) Collector current I C (A) Switching time t off, tf, td (off) – IC Switching time t off, tf, td (off) ( /G6ds) td (on) tr 0 10 20 30 40 50 0.01 0.03 0.3 0.1 Common emitter VCC /G3d 300 V VGG /G3d 15 V RG /G3d 13 /G57 : Tc /G3d 25°C : Tc /G3d 125°C (Note 1) ton 0 10 20 30 40 50 0.01 0.03 0.3 0.1 Common emitter VCC /G3d 300 V VGG /G3d 15 V RG /G3d 13 /G57 : Tc /G3d 25°C : Tc /G3d 125°C (Note 1) td (off) toff tf 1 3 10 30 100 1000 0.1 0.3 300 Common emitter VCC /G3d 300 V VGG /G3d 15 V IC /G3d 50 A : Tc /G3d 25°C : Tc /G3d 125°C (Note 2) Eoff Eon 1 3 10 30 100 1000 0.01 0.03 0.3 0.1 300 td (on) ton tr Common emitter VCC /G3d 300 V VGG /G3d 15 V IC /G3d 50 A : Tc /G3d 25°C : Tc /G3d 125°C (Note 1) 1 3 10 30 100 Common emitter VCC /G3d 300 V VGG /G3d 15 V IC /G3d 50 A : Tc /G3d 25°C : Tc /G3d 125°C (Note 1) 1000 0.01 0.03 0.3 0.1 300 tf td (off) toff 0 10 20 30 40 50 0.1 Common emitter VCC /G3d 300 V VGG /G3d 15 V RG /G3d 13 /G57 : Tc /G3d 25°C : Tc /G3d 125°C (Note 2) 0.3 Eoff Eon

Collector-emitter voltage V CE (V) C – VCE Capacitance C (pF) Gate-emitter voltage V GE (V) Gate charge Q G (nC) VCE, VGE – QG Collector-emitter voltage V CE (V) Reverse recovery time t rr (ns) Forward current I F (A) trr, Irr – IF Reverse recovery current I rr (A) Forward voltage V F (V) IF – VF Forward current I F (A) Collector-emitter voltage V CE (V) Safe operating area Collector current I C (A) Collector-emitter voltage V CE (V) Reverse bias SOA Collector current I C (A) 0 100 200 300 400 Common emitter RL /G3d 6 /G57 Tc /G3d 25°C 300 VCE /G3d 100 V 200 100 200 300 400 500 0 1 2 3 4 5 Common collector VGE /G3d 0 100 /G2d40 Tc /G3d 125°C 0.1 1 3 30 300 1000 300 1000 3000 30000 100 100.3 100 10000 Common emitter VGE /G3d 0/G20 f /G3d 1 MHz Tc /G3d 25°C Cies Coes Cres 0 10 20 30 40 50 0.1 0.3

100 Common collector

di/dt /G3d /G2d100 A//G6ds VGE /G3d 0 : Tc /G3d 25°C : Tc /G3d 125°C 100 300 1000 3000 Irr trr 10000 Tj /G3c/G3d125°C VGE /G3d 15 V RG /G3d 13 /G57 1 3 10 30 100 1000 0.1 0.3 100 300 300 1 3 10 30 300 1000 0.1 0.3 100 300 *: Single pulse Tc /G3d 25°C Curves must be derated linearly with increase in temperature. 100 100 /G6ds* 50 /G6ds* 1 ms* 10 ms* DC operation IC max (continuous) IC max (pulse)*

Pulse width t w (s) rth (t) – tw Transient thermal resistance r th (t) (°C/W) 10/G2d5 10 /G2d4 10 /G2d2 10 /G2d1 10 2 IGBT FRD 10/G2d4 10/G2d3 10/G2d2 10/G2d1 101

102 Tc /G3d 25°C

/Gb7/G20TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. /Gb7/G20The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. /Gb7/G20The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. /Gb7/G20The information contained herein is subject to change without notice. 000707EAARESTRICTIONS ON PRODUCT USE