GT50J122 TOSHIBA | Alldatasheet

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TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT50J122 Current Resonance Inverter Switching Application

  • Enhancement mode type
  • High speed : t f = 0.16 μs (typ.) (IC = 60A)
  • Low saturation voltage: VCE (sat) = 1.9 V (typ.) (IC = 60A)
  • Fourth-generation IGBT
  • TO-3P(N) (Toshiba package name) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-emitter voltage VCES 600 V Gate-emitter voltage VGES ±25 V @ Tc = 100°C 31 Continuous collector current @ Tc = 25°C IC A Pulsed collector current ICP 120 A @ Tc = 100°C 62 Collector power dissipation @ Tc = 25°C P C 156 W Junction temperature Tj 150 °C Storage temperature range Tstg −55 to 150 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Thermal Characteristics Characteristics Symbol Max Unit Thermal resistance Rth (j-c) 0.80 °C/W Marking Unit: mm JEDEC ― JEITA ― TOSHIBA 2-16C1C Weight: 4.6 g (typ.) GT50J122 TOSHIBA Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. Part No. (or abbreviation code)

Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current IGES V GE = ±25 V, VCE = 0 ― ― ±500 nA Collector cut-off current ICES V CE = 600 V, VGE = 0 ― ― 1.0 mA Gate-emitter cut-off voltage VGE (OFF) I C = 60 mA, VCE = 5 V 3.0 ― 6.0 V Collector-emitter saturation voltage V CE (sat) I C = 60 A, VGE = 15 V ― 1.9 2.5 V Input capacitance Cies V CE = 10 V, VGE = 0, f = 1 MHz ― 4800 ― pF Rise time tr ― 0.17 ― Turn-on time ton ― 0.23 ― Fall time tf ― 0.16 0.26 Switching time Turn-off time t off Resistive Load VCC = 300 V, IC = 60 A VGG = ±15 V, RG = 30 Ω (Note 1) ― 0.41 ― μs Note 1: Switching time measurement circuit and input/output waveforms 10% 90% VGE VCE IC td (off) toff tr ton tf 10% 10% 90% 90% RG VCC RL

Collector-emitter saturation voltage VCE (sat) (V) Collector current I C (A) Collector-emitter voltage V CE (V) IC – VCE Collector current I C (A) Collector-emitter voltage V CE (V) IC – VCE Collector current I C (A) Collector-emitter voltage V CE (V) IC – VCE Collector current I C (A) Gate-emitter voltage V GE (V) IC – VGE Case temperature Tc (°C) VCE (sat) – Tc Common emitter Tc = −40°C 120 VGE = 6 V 1 2 3 4 5 100 Common emitter Tc = 25°C 120 VGE = 6 V 1 2 3 4 5 100

10 Common emitter

Tc = 125°C 120 1 2 3 4 5 100 VGE = 6 V Tc = 125°C −40 Common emitter VCE = 5 V 120 2 4 6 8 10 100 IC = 120 A Common emitter VGE = 15 V 3.2 0.0 −60 −20 20 60 100 140 0.8 1.6 2.4

Collector-emitter voltage V CE (V) Switching time ( μs) Switching Time – IC Collector current I C (A) Switching time ( μs) Collector-emitter voltage V CE (V) C – VCE Capacitance C (pF) Gate-emitter voltage V GE (V) Gate charge Q G (nC) VCE, VGE – QG Safe Operating Area Gate resistance R G ( Ω) Switching Time – RG Collector current I C (A) Collector-emitter voltage V CE (V) Reverse Bias SOA VCE = 300 V Common emitter RL = 5 Ω Tc = 25°C 400 0 80 160 240 320 100 200 300 200 100 Common emitter VGE = 0 f = 1 MHz Tc = 25°C 30000 0.0 1 10 100 1000 100 1000 10000 Cres 300 500 3000 5000 Coes Cies Common emitter VCC = 300 V IC = 60 A VGG = ±15 V Tc = 25°C 0.01 0 10 100 1000 0.1 0.3 toff 0.03 0.05 0.5 ton tr tf Common emitter VCC = 300 V RG = 30 Ω VGG = ±15 V Tc = 25°C 0.01 0 20 50 70 0.1 0.3 0.03 0.05 0.5 tf tr 10 30 40 60 ton toff Tj ≤ 125°C VGG = 20 V RG = 10 Ω 3000 1 10 1000 10000 100 300 100 500 1000 Collector current I C (A) Collector-emitter voltage V CE (V) 1 10 1000 10000 100 300 100 1000 *: Single non-repetitive pulse Tc = 25°C Curves must be derated linearly with increases in temperature. 10 μs* 100 μs* 10 ms* 1 ms* DC operation IC max (pulsed) * IC max (continuous)

Case temperature Tc (°C) ICmax – Tc Maximum DC collector current I Cmax (A) rth (t) – tw 25 50 75 100 125 150 Common emitter VGE = 15 V 50 Pulse width t w ( s ) Transient thermal impedance r th (t) (°C/W) 10−2 10−5 10−3 10−2 10−1 10 0 10 1 10 2 10−1 100 101 102 10−410−3 Tc = 25°C

RESTRICTIONS ON PRODUCT USE 20070701-EN

  • The information contained herein is subject to change without notice.
  • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity an d vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA produc ts, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIB A products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconduct or Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.
  • The TOSHIBA products listed in this document are in tended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfuncti on or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage incl ude atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, et c.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk.
  • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations.
  • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringement s of patents or other rights of the third parties which may result from its use. No license is granted by implic ation or otherwise under any patents or other rights of TOSHIBA or the third parties.
  • Please contact your sales representative for product- by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations.