GT40G121 TOSHIBA | Alldatasheet

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TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT40G121 The 4th Generation Current Resonance Inverter Switching Applications /Gb7/G20Enhancement-mode /Gb7/G20High speed: t f = 0.30 µs (typ.) (IC = 60 A) /Gb7/G20Low saturation voltage: VCE (sat) = 1.8 V (typ.) (IC = 60 A) Maximum Ratings (Ta /G3d/G3d/G3d/G3d 25°C) Characteristics Symbol Rating Unit Collector-emitter voltage V CES 400 V Gate-emitter voltage V GES /Gb125 V DC I C 40 Collector current 1 ms I CP 100 A Collector power dissipation (Tc /G3d 25°C) P C 100 W Junction temperature T j 150 °C Storage temperature range T stg /G2d55~150 °C Electrical Characteristics (Ta /G3d/G3d/G3d/G3d 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current I GES V GE /G3d /Gb125 V, VCE /G3d 0 /Gbe /Gbe /Gb1500 nA Collector cut-off current I CES V CE /G3d 400 V, VGE /G3d 0 /Gbe /Gbe 1.0 mA Gate-emitter cut-off voltage V GE (OFF) I C /G3d 60 mA, VCE /G3d 5 V 3.0 /Gbe 6.0 V /G20 Collector-emitter saturation voltage V CE (sat) I C /G3d 60 A, VGE /G3d 15 V /Gbe 1.8 2.5 V /G20 Input capacitance C ies V CE /G3d 10 V, VGE /G3d 0, f /G3d 1 MHz /Gbe 3900 /Gbe/G20pF Rise time t r /Gbe 0.33 /Gbe Turn-on time t on /Gbe/G200.43 /Gbe/G20 Fall time t f /Gbe/G200.30 0.40 Switching time Turn-off time t off /G20 /Gbe 0.54 /Gbe/G20 /G6ds Thermal resistance R th(j-c) /Gbe /Gbe /Gbe 1.25 °C/W Unit: mm JEDEC TO-220AB JEITA ― TOSHIBA 2-10P1C Weight: 2 g (typ.) /G2d15 V 15 V 39 /G57 200 V 3.33 /G57

Collector current I C (A) Collector-emitter voltage V CE (V) Collector-emitter voltage V CE (V) IC – VCE Collector current I C (A) Gate-emitter voltage V GE (V) VCE – VGE Collector-emitter voltage V CE (V) Gate-emitter voltage V GE (V) VCE – VGE Collector-emitter voltage V CE (V) Gate-emitter voltage V GE (V) VCE – VGE Gate-emitter voltage V GE (V) IC – VGE Case temperature Tc (°C) VCE (sat) – Tc Gate-emitter saturation voltage VCE (sat) ( V ) 100 0 1 2 3 4 5 VGE /G3d 7 V Common emitter Tc /G3d 25°C 100 0 2 4 6 8 10 Tc /G3d 125°C Common emitter VCE /G3d 5 V /G2d40 /G2d40 0 40 80 120 160 Common emitter VGE /G3d 15 V IC /G3d 10 A 0 4 8 12 20 24 16 Common emitter Tc /G3d 25°C IC /G3d 10 A 0 4 8 12 20 24 16 Common emitter Tc /G3d /G2d40°C IC /G3d 10 A 0 4 8 12 20 24 16 Common emitter Tc /G3d 125°C IC /G3d 10 A

0.5 0.3 0.03 0 10 20 30 40 0.05 0.1 0.01 50 60 70 Common emitter VCC /G3d/G20200 V VGG /G3d/G20/Gb115 V RG /G3d/G2039 /G57 Tc /G3d 25°C toff ton tr tf Switching time ( /G6ds) Collector current I C (A) Gate charge QG (nC) VCE, VGE – QG Collector-emitter voltage V CE ( /Gb425 V) Gate-emitter voltage V GE (V) Collector-emitter voltage V CE (V) C – VCE Collector current C (pF) Gate resistance R G ( /G57) Switching time – RG Switching time ( /G6ds) Collector-emitter voltage V CE (V) Safe operating area Collector current I C (A) Switching time – I C 3 10 1 300 100 500 1000 3000 5000 10000 30 100 300 1000 3000 Common emitter VGE /G3d 0 V f /G3d/G201 MHz Tc /G3d/G2025°C cies Coes Cres 40 80 120 160 200 0 Common emitter RL /G3d 3.3 /G57 Tc /G3d/G2025°C VCE /G3d 200 V 150 100 tf 5 10 30 50 100 3 Common emitter VCC /G3d 200 V VGG /G3d /Gb115 V IC /G3d/G2060 A Tc /G3d/G2025°C 300 tr ton toff 0.1 0.3 0.5 0.3 1 3 10 30 100 300 0.5 300 100 1000 *Single non-repetitive pulse Tc /G3d 25°C Curves must be derated linearly with increase in temperature. IC max (pulse) IC max (continuous) DC operation 1 ms* 100 /G6ds* 10 /G6ds* 10 ms* (pulse)

10/G2d5 10/G2d4 10/G2d3 10/G2d2 10/G2d1 100 10 1 10 2 10/G2d2 10/G2d1 100 Tc /G3d/G2025°C 101 Collector-emitter voltage V CE (V) Reverse bias safe operating area Collector current I C (A) Pulse Width tw (s) rth (t) – tw Transient thermal impedance rth (t) ( °C/W) 1 3 10 100 300 30 100 300 1000 Tj /G3c/G3d125°C VGE /G3d/G20/Gb115 V RG /G3d/G2039 /G57

/Gb7/G20TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. /Gb7/G20The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. /Gb7/G20The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. /Gb7/G20The information contained herein is subject to change without notice. 000707EAARESTRICTIONS ON PRODUCT USE