GT35J321

GT35J321 TOSHIBA | Alldatasheet

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TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT35J321 Fourth-generation IGBT Current Resonance Inverter Switching Applications z Enhancement mode z High speed: tf = 0.19 μs (typ.) (IC = 50 A) z Low saturation voltage: VCE (sat) = 1.9 V (typ.) (IC = 50 A) z FRD included between emitter and collector z Toshiba package name: TO-3P(N)IS Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector−emitter voltage V CES 600 V Gate−emitter voltage V GES ±25 V @ Tc = 100°C 18 Collector current (DC) @ Tc = 25°C IC A Collector current (pulse) ICP 100 A DC I F 20 Diode forward current Pulse I FP 40 A @ Tc = 100°C 30 Collector power dissipation @ Tc = 25°C PC W Junction temperature Tj 150 °C Storage temperature range Tstg −55 to 150 °C Note: Using continuously under heavy loads (e.g. the a pplication of high temperature/current/voltage and the significant change in temperature, etc. ) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operat ing temperature/current/voltage, etc. ) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Thermal Characteristics Characteristics Symbol Max Unit Thermal resistance (IGBT) Rth (j-c) 1.67 °C/W Thermal resistance (diode) Rth (j-c) 3.2 °C/W Equivalent Circuit Marking Unit: mm JEDEC ⎯ JEITA ⎯ TOSHIBA 2-16F1A Weight: 5.8 g (typ.) GT35J321 TOSHIBA Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. Part No. (or abbreviation code) 1. GATE 2. COLLECTOR 3. EMITTER Gate Emitter Collector

Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current IGES V GE = ±25 V, VCE = 0 V ― ― ±500 nA Collector cut−off current I CES V CE = 600 V, VGE = 0 V ― ― 1.0 mA Gate-emitter cut-off voltage VGE (OFF) IC = 50 mA, VCE = 5 V 3.0 ― 6.0 V Collector-emitter saturation voltage V CE (sat) I C = 50 A, VGE = 15 V ― 1.9 2.3 V Input capacitance Cies V CE = 10 V, VGE = 0 V, f = 1 MHz ― 2500 ― pF Rise time tr ― 0.24 ― Turn-on time ton ― 0.33 ― Fall time tf ― 0.19 0.32 Switching time Turn-off time t off Resistive Load VCC = 300 V, IC = 50 A VGG = ±15 V, RG = 39 Ω (Note 1) ― 0.51 ― μs Diode forward voltage VF I F = 15 A, VGE = 0 V ― ― 2.0 V Reverse recovery time trr I F = 15 A, di / dt = −100 A / μs ― ― 0.2 μs Note 1: Switching time measurement circuit and input/output waveforms 10% 90% VGE VCE IC td (off) toff tr ton tf 10% 10% 90% 90% RG VCC RL

VGE = 7 V 910 100 Collector-emitter saturation voltage VCE (sat) (V) Collector-emitter voltage V CE (V) IC – VCE Collector current I C (A) Collector-emitter voltage V CE (V) IC – VCE Collector current I C (A) Collector-emitter voltage V CE (V) IC – VCE Collector current I C (A) Case temperature Tc (°C) VCE (sat) – Tc Common emitter Tc = −40°C 100 0 1 2 3 4 5 Common emitter Tc = 25°C VGE = 7 V 0 1 2 3 4 5 100 Common emitter Tc = 125°C VGE = 7 V 910 −40 0 40 80 120 160 IC = 100 A Common emitter VGE = 15 V Collector current I C (A) Gate-emitter voltage V GE (V) IC – VGE 100 0 2 4 6 8 Common emitter VCE = 5 V Tc = 125°C −40

0.1 1 10 1000 10000 100 100 1000 0.1 1 10 1000 10000 100 100 10 μs* 100 μs* 10 ms* 1 ms* tf tr ton toff 0.01 0 20 50 60 0.1 30 40 10 0.01 1 10 100 1000 0.1 toff ton tr tf 1 10 100 1000 100 1000 10000 Cres Coes Cies VCE = 300 V 200 100 Collector-emitter voltage V CE (V) Collector current I C (A) Switching time ( μs) Switching Time – IC Collector current I C (A) Switching time ( μs) Collector-emitter voltage V CE (V) C – VCE Capacitance C (pF) Gate-emitter voltage V GE (V) Gate charge Q G (nC) VCE, VGE – QG Collector-emitter voltage V CE (V) Safe Operating Area Gate resistance R G ( Ω) Switching Time – RG Collector current I C (A) Collector-emitter voltage V CE (V) Reverse Bias SOA Common emitter RL = 6 Ω Tc = 25°C Common emitter VGE = 0 V f = 1 MHz Tc = 25°C Common emitter VCC = 300 V IC = 50 A VGG = ±15 V Tc = 25°C Common emitter VCC = 300 V RG = 39 Ω VGG = ±15 V Tc = 25°C Tj ≤ 125°C VGG = 20 V RG = 39 Ω *: Single non-repetitive pulse Tc = 25°C Curves must be derated linearly with increases in temperature. DC operation IC max (continuous) IC max (pulsed) * 500 0 80 160 240 400 100 200 300 320 400

10−2 10−5 10−3 10−2 10−1 10 0 10 1 10 2 10−1 100 101 102 10−410−3 25 50 75 100 125 150 Forward voltage V F ( V ) IF – VF Forward current I F (A) Peak reverse recovery current I rr (A) Reverse voltage V R ( V ) Reverse recovery time t rr (ns) Irr, trr – IF Forward current I F (A) Case temperature Tc (°C) ICmax – Tc Maximum DC collector current I Cmax (A) Pulse width t w ( s ) rth (t) – tw Transient thermal impedance r th (t) (°C/W) Junction capacitance C j (pF) Cj – VR Tc = 125°C Common emitter VGE = 0 V −40 Common emitter di/dt = −100 A/μs VGE = 0 V Tc = 25°C f = 1 MHz Tc = 25°C Common emitter VGE = 15 V Diode stage Tc = 25°C IGBT stage di/dt (A/ μs) Reverse recovery time t rr (ns) Irr, trr – di/dt 40 120 160 200 Common collector IF = 15 A Tc = 25°C Irr trr Peak reverse recovery current I rr (A) 200 100

RESTRICTIONS ON PRODUCT USE 20070701-EN GENERAL

• The information contained herein is subject to change without notice.
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity an d vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA produc ts, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIB A products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconduct or Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.
• The TOSHIBA products listed in this document are in tended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfuncti on or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage incl ude atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, et c.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk.
• The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations.
• Please contact your sales representative for product- by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations.