GT20J101 TOSHIBA | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 6
Technical content
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT20J101 High Power Switching Applications
- The 3rd Generation
- Enhancement-Mode
- High Speed: t f = 0.30 µs (max)
- Low Saturation Voltage: VCE (sat) = 2.7 V (max) Maximum Ratings (Ta ==== 25°C)çççç Characteristic Symbol Rating Unit Collector-emitter voltage V CES 600 V Gate-emitter voltage V GES ±20 V DC I C 20 Collector current 1 ms I CP 40 A Collector power dissipation (Tc = 25°C) PC 130 W Junction temperature T j 150 °C Storage temperature range T stg −55~150 °C Unit: mmç JEDEC ― JEITA ― TOSHIBA 2-16C1C Weight: 4.6 g Preliminary
Electrical Characteristics (Ta ==== 25°C) Characteristic Symbol Test Condition Min Typ. Max Unit Gate leakage current I GES V GE = ±20 V, VCE = 0 ±500 nA Collector cut-off current I CES V CE = 600 V, VGE = 0 1.0 mA Gate-emitter cut-off voltage V GE (OFF) I C = 2 mA, VCE = 5 V 5.0 8.0 V Collector-emitter saturation voltage V CE (sat) I C = 20 A, VGE = 15 V 2.1 2.7 V Input capacitance C ies V CE = 20 V, VGE = 0, f = 1 MHz 1450 pF Rise time t r 0.12 Turn-on time t on 0.40 Fall time t f 0.15 0.30 Switching time Turn-off time t off Inductive Load VCC = 300 V, IC = 20 A VGG = ±15 V, RG = 56 Ω (Note1) 0.50 µs Thermal resistance R th (j-c) 0.96 °C/W Note1: Switching time measurement circuit and input/output waveforms Note2: Switching loss measurement waveforms GT20J301 RG IC VCE L V CC −VGE 10% 90% VGE VCE IC td (off) toff td (on) t r ton tf 10% 10% 10% 90% 10% 90% 10% 90% VGE VCE IC Eoff E on 0 10%
Collector current I C (A) Collector-emitter voltage V CE (V) Collector-emitter voltage V CE (V) IC – VCE Collector current I C (A) Gate-emitter voltage V GE (V) VCE – VGE Collector-emitter voltage V CE (V) Gate-emitter voltage V GE (V) VCE – VGE Collector-emitter voltage V CE (V) Gate-emitter voltage V GE (V) VCE – VGE Gate-emitter voltage V GE (V) IC – VGE Case temperature Tc (°C) VCE (sat) – Tc Collector-emitter saturation voltage VCE (sat) (V) 0 4 8 12 16 Common emitter Tc = 25°C 10 40 IC = 5 A 0 4 8 12 16 Common emitter Tc = 125°C IC = 5 A 0 4 8 12 16 Common emitter Tc = −40°C 20 10 IC = 5 A −60 −20 20 60 100 140 Common emitter VGE = 15 V IC = 5 A 0 4 8 12 16 Tc = 125°C Common emitter VCE = 5 V −40 0 1 2 3 4 VGE = 10 V Common emitter Tc = 25°C 13 15
Switching loss E on, Eoff ( m J ) Switching time t off, tf ( µs) Gate resistance R G ( Ω ) Switching time t on, tr – RG Switching time t on, tr ( µs) Collector current I C (A) Switching time t on, tr – IC Switching time t on, tr ( µs) Gate resistance R G ( Ω ) Switching time t off, tf – RG Switching time t off, tf ( µs) Collector current I C (A) Switching time t off, tf – IC Gate resistance R G ( Ω ) Switching loss E on, Eoff – RG Collector current I C (A) Switching loss E on, Eoff – IC Switching loss E on, Eoff ( m J ) 0.5 0.3 0.05 0.1 tr ton Common emitter VCC = 300 V VGG = ±15 V IC = 20 A : Tc = 25°C : Tc = 125°C 0.03 3 10 30 100 300 1000 4 0 0.3 0.01 0.03 8 12 16 20 Common emitter VCC = 300 V VGG = ±15 V RG = 56 Ω : Tc = 25°C : Tc = 125°C tr ton 0.1 0.05 0.5 0.1 0.3 0.05 0.5 0.03 Common emitter VCC = 300 V VGG = ±15 V IC = 20 A : Tc = 25°C : Tc = 125°C 10 30 100 3 1000 300 toff tf 0.3 0 4 8 12 16 0.1 0.01 Common emitter VCC = 300 V VGG = ±15 V RG = 56 Ω : Tc = 25°C : Tc = 125°C tf toff 0.03 0.5 0.05 0 4 8 12 16 20 0.1 0.01 Eoff Eon Common emitter VCC = 300 V VGG = ±15 V RG = 56 Ω : Tc = 25°C : Tc = 125°C Note2 0.3 0.03 Eoff Eon Common emitter VCC = 300 V VGG = ±15 V IC = 20 A : Tc = 25°C : Tc = 125°C Note2 0.1 1 10 100 1000 0.3
Transient thermal impedance Rth (t) ( ° C / W ) Collector-emitter voltage V CE (V) C – VCE Capacitance C (pF) Gate-emitter voltage V GE (V) Gate charge Q G (nC) VCE, VGE – QG Collector-emitter voltage V CE (V) Collector-emitter voltage V CE (V) Safe operating area Collector current I C (A) Pulse width t w (s) Rth (t) – tw Collector-emitter voltage V CE (V) Reverse bias SOA Collector current I C (A) 3 10 1 0.5 0.1 0.3 100 30 100 300 1000 3000 Tj <= 125°C VGE = ±15 V RG = 56 Ω 0.3 1 3 10 0.5 30 100 300 3000 1000 0.1 100 *: Single nonrepetitive pulse Tc = 25°C Curves must be derated linearly with increase in temperature. IC max (pulsed)* IC max (continuous) DC operation 1 ms* 100 µs* 50 µs* 10 ms* 100 5000 300 1000 3000 Common emitter VGE = 0 f = 1 MHz Tc = 25°C Cies Coes Cres 0.5 1 3 10 30 3000 100 300 1000 Common emitter RL = 15 Ω Tc = 25°C 20 40 60 80 100 100 200 300 400 500 VCE = 100 V 300 200 10−3 102 10−5 10 −4 10 −3 10−2 10 −1 10 0 10 1 10 2 10−2 10−1 100 101 10−4 Tc = 25°C
- TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc..
- The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk.
- The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others.
- The information contained herein is subject to change without notice. 000707EAARESTRICTIONS ON PRODUCT USE