GT20G102SM TOSHIBA | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 3
Technical content
TOSHIBA GT20G102(SM) TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N-CHANNEL IGBT STROBE FLASH APPLICATIONS Unit in mm @ High Input Impedance 10.3MAx. . 5.0 1.32 ¢ Low Saturation Voltage : VCE (sat)=8V (Max.) (Ig=130A) oe — @ = Enhancement-Mode - on © 12V Gate Drive ¥ 2 up St 076 3 MAXIMUM RATINGS (Ta = 25°C) 254 254 CHARACTERISTIC SYMBOL | RATING 5 Fate 3 nt irda [2 Collector Emitter Voltage Vous_|_400 |v] este Gate-Emitter Voltage VGES Collector Current , 73 A 2. COLLECTOR (HEAT SINK) [ ims | Icp | 130 | 3. EMITTER Storage Temperature Range —55~150 TOSHIBA __2-10S2C Weight : 1.4g ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC SYMBOL TEST CONDITION Gate Leakage Current IGES VGE=+20V, VcE=0 | — | — [+100 Collector Cut-off Current IcES VcE=400V, VGE=0 [ — | — | 10] pA | Gate-Emitter Cut-off Voltage | Vcr (OFF) |Ic=1mA, VcR=5V | 2{[— | 45] v | Collector-Emitter Input Capacitance Von=10V, Van=0, f=IMHz | — | 1850| — | pF | . - us Time Fall Time VIN: ty £ 100ns tS iooms ome, La | aol 60 Thermal Resistance PRage [| — i = | — [208 070] @ TOSHIBA is continually working to improve the quality and the reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to observe standards of safety, and to avoid situations in which a malfunction or failure of a TOSHIBA product could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent products specifications. Also, please keep in mind the precautions and conditions set forth in the TOSHIBA Semiconductor Reliability Handbook. @ The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or ‘other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. @ The information contained herein is subject to change without notice. 1998-09-28 1/3
GT20G102(SM) TOSHIBA VCE - VGE — g TIMI COMMON EMITTER Teel] +} ts pect ER Ere sory EE i poe FANE eer oe PHC 3 |W! COMMON EMITTER E ‘TOOSS SEES oy a 5 COS EEESES TZ [fT [| veneer] ee Pr 2 CEH Prt] Jt ° % 8 12 16 a ‘ : : . ° care eurrnan VOLTAGE VgE (V) COLLECTOR-EMITTER VOLTAGE Vcg (V) vee : vn > Cee] > A si | : a h P foo TOHHACNS B Rett KOS » CRReEE ESS snes Pores SE SANE E 4 1 a Ne | PASSES FERS SSS FSS 5 ey a | 8 HH ° ° ‘ . . * GATE-EMITTER VOLTAGE VgE (V) GATE-EMITTER VOLTAGE VgE (V) : VCE (sat) — Te To, Tee eeceapAece = EEE eeeo/. see ee seaaa ‘manne ee ‘COLL eee Pht fH ee coro, eee : 2 Seer fet PeDARSEE Pe 3 f i _—t —— ; “TIA COMMON EMITTER Ea fee f | , : : a “ * “ 7 CASE TEMPERATURE Te (°C) GATE-EMITTER VOLTAGE VgE (V) 1998-09-28 2/3
TOSHIBA GT20G102(SM) C — VCE - VCE, VGE - 9G a ee | = TT)]),YLLILL! se ce eT 2 ES 00 ee Sw. tt IA TTT,
3 SCOT CETTE coe THT 2 “OTT Yrerrer F
pee ffl tA TPT, 3 8 wg SESE vageo FTELTALE EY © soo} STE sot Foot Zit} Titi |, e
2 ASNT 2 TA rox=anov | Gougon eum | E
¢ | UMINN Tg : E é wok INS Coes EEE £ mf fo 8 a Coot 3 imu S
8 FCT SSE res TTT g fut tT |,
LTT ETE TTT GATE CHARGE Qq (0) 1 3 10 30 100 300 1000 COLLECTOR-EMITTER VOLTAGE Vcg (V) 10 SWITCHING TIME — Rg common 3 i . PSS a en g —— ce = = ; POPS ee ae coe
2 TELE ET reaee Z J voce*3Y 0 FERS
; Sse aes | Sad = —T 0.3} oe | Ses>cecenee fe ees] Lear EE eet UA ITih *o “ * v0 160 *80 ° i. ne nesietanen Rg o oe G COLLECTOR CURRENT Ig (A) MAXIMUM OPERATING AREA MINIMUM GATE DRIVE AREA 1600} 2"CT TLL [tty yt ty ty ~ & & | | | | | jee = Py Pee ey yy .™ 7 TT eMC TN TTT P ee GRE ed ee eee eee 8 gf | tT if | | 2 aed nN 2 7) )Sf non e LiTTTTTN |e 5 f Bs eo 3 jroror | TTT NTT | 3 a f 2 400) tes 70°¢ . S LET TTT TT yt 2 vos 1 | TT ATI 2 [LEYTE TTT rove | TT TT TT ~% + 8 12 i620 So 3 1002) ~SC«M SSC GATE-EMITTER VOLTAGE VgE (V) PEAK COLLECTOR CURRENT Icp (A) 1998-09-28 3/3