GT20D101 TOSHIBA | Alldatasheet

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TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL TYPE HIGH POWER AMPLIFIER APPLICATION Unit in mm 20.5MAX. 3340.2 © High Breakdown Voltage : Vong=250V (Min.) Werae © High Forward Transfer Admittance : |Yge|= 10S (Typ.) | dei as © Complementary wo GT20D201 g $ re s “og ? @ Enhancement-Mode 25, yy 3 30] Bs 10735 | | § MAXIMUM RATINGS (Ta = 25°C) 545.4015 545-4015 CARACTERISTICS SYMBOL | RATINGS |UNIT|] gj | 4 Collector-Emitter Voltage VcES #7 | 2 8 Gate-Emitter Voltage Vors ee Collector Current 1. GATE Latch Up Current | wm | 6 | a | 2, COLLECTOR (HEAT SINK) Collector Power Dissipation P w 3. EMITTER (To=25°C) c Weight : 9.75g ELECTRICAL CHARACTERISTICS (Ta = 25°C) CARACTERISTICS SYMBOL TEST CONDITION UNIT Collector Cut-off Current Ions _| Vor=250V, Vop=0 | — | — | 50[ za | Gate Leakage Current Ices _| Von=+20V, Von=0 | — | — | +10] a | Collector-Emitter Saturation Voltage Vor (sat) | 10-154, VGE=10V |= [15] 20] v | Gate-Emitter Cut-off Voltage | VGR(OFF)| Vor=10V,Io=100mA_ | 14 | — | 32] Vv | Forward Transfer Admittance rel [ Vow=i0vic=10 | — [10 | — | . Vop=10V, Ig=0 . Vcr=10V, In=0 . Vcr=10V, In=0 Reverse Transfer Capacitance Cres f= 1MHz 65 pF 610016442 malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to observe standards of safety, and to avoid situations in which a malfunction or failure of a TOSHIBA product could cause loss SP human life, body injry or damoge to propery. In developing” your designs, please ensure shat TOSHIBA produds afe used within specited Operating ranmger at fet forth In the teat raceme products specticntione. Also, please Leap in mind the precautions snd conditions see ford in the TOSHIBA Semiconductor Reliability Handbook. 1997-08-22 1/3

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a | a a a Ce! COLLECTOR-EMITTER VOLTAGE Vcg (V) GATE-EMITTER VOLTAGE VgE (V) +0 l¥fel - Ic 20, Vck(sat) — Te Peowon ewrrrer (| CM_O "Tonnoxeuren |] 111 ee cae B | vce | ee E Ae et ed Fi S 7 _ — 2 oh eet a a 2 pit wwe ge | ae er ge ‘Il A HH 8 Joe ee nd ot ee UI UMN Tg MEST S26! eee ee eee Bg SS Boh | a PA TT BS 05} = oa iy ST Tre? i li g A 2 PEPE © ALI TT TE TT ° a a a TO) a a a COLLECTOR CURRENT Ic (A) CASE TEMPERATURE Te (°C) C - VcE 250 Pc - Te 3000) ET LTT coax [LLLELLLLLILL Eo sot Nogne 3 ad EEE g OSS SS SSS hme e™ Try rt_iLeee $ oS et te= 26°C & 7 500) St EHH te=25 B Se ENEe ee ° soo FSS cone Bisa !

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2 sop NUT TT ee (PIN 2 ae e LITE NTT TTT | Ey FE HHH sere HH 5 (| {i ti XLL LL] sol TSN 3 | a L ETHIE TTT TTT PEPE PEN TT | 10 3 10 30 100 300 1000 pa 0 50 100 150 200 250 COLLECTOR-EMITTER VOLTAGE Vcg (V) CASE TEMPERATURE Te (°C) @ The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed Tost @ The information contained herein is subject to change without notice 4997-08-22 2/3

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0.5) 3 SINGLE NonREPETITIVE [TT THINNNT 0.3] PULSE Ta=25°C LUT ANS | CURVES MUST BE DERATED LTTINN| LINEARLY WITH INCREASE N IN TEMPERATURE. i oy 3 10 30 100 300 COLLECTOR-EMITTER VOLTAGE Vcr (V) 1997-08-22 3/3