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http://www.semicon.toshiba.co.jp/eng SEMICONDUCTOR PRODUCT GUIDE Discrete IGBTs 2011-3

– 2 –

1 Features and Structure

p n GATE BONDING PADGATE METAL POLY SILICON INSULATOR p p n+ n+ EMITTER METAL p+ppp Emitter Gate Collector Electrode n+ n+ Gate Collector Emitter Collector Emitter Gate Rn- (MOD) Collector Emitter Gate Rn- (MOD) Features of the Toshiba Discrete IGBTs Construction ▼ Equivalent Circuit The Toshiba discrete IGBTs are available in high-voltage and high-current ratings. They are used in inverter and power conversion circuits for such diverse applications as motor drivers, uninterruptible power supply (UPS) systems, IH cookers, plasma display panels (PDPs), strobe flashes and so on. (1) IGBTs also featuring fast switching (2) Low collector-emitter saturation voltage even in the large current area (3) IGBTs featuring a built-in diode with optimal characteristics tailored to specific applications (4) High input impedance allows voltage drives (5) Available in a variety of packages The basic structure of the planar IGBT consists of four layers (pnpn), as shown in the following figure. Low saturation voltage is achieved by using a pnp transistor to allow conductivity modulation during conduction. ▼ Planar Structure IGBT: Insulated Gate Bipolar Transistor IGBTs combine the MOSFET advantage of high input impedance with the bipolar transistor advantage of high-voltage drive. The conductivity modulation characteristics of a bipolar transistor make it ideal for load control applications that require high breakdown voltage and high current. Toshiba offers a family of fast switching IGBTs, which are low in carrier injection and recombination in carrier.

– 3 –

2 IGBT Technical Overview

(3) Soft switching (6.5th gen): RC structure (1) High ruggedness (3rd gen): Low VCE(sat) and high ruggedness due to optimized carrier injection and thinner wafers (2) Soft switching (5th gen): Low VCE(sat) due to trench gate structure1200 V (1) Soft switching (4th gen): Low VCE(sat) due to trench gate structure (2) Soft switching (5th gen): Low VCE(sat) due to optimized carrier injection and trench gate structure (3) Soft switching (6th gen): Thinner wafers and finer process geometries 900 to 1500 V (1) High ruggedness (3rd gen): Low VCE(sat) and high ruggedness due to optimized carrier injection and thinner wafers (2) Fast switching (4th gen): High speedy tf due to optimized carrier injection (3) Soft switching (4th gen): Low VCE(sat) due to trench gate structure (4) Low VCE(sat) (6th gen): Thinner wafers and finer process geometries (5) Soft switching (5th gen): Thinner wafers 600 V (1) Strobe flashes (5th gen): Low VCE(sat) due to trench gate structure (2) Strobe flashes (6th gen): High current due to trench gate structure and optimized wafers (3) Strobe flashes (7th gen): High current due to optimized wafers and finer process geometries 400 V Year (1) Plasma displays (4th gen): Low VCE(sat) due to trench gate structure and high IC due to lifetime control (2) Plasma displays (5th gen): Low turn-on loss due to finer process geometries (3) Plasma displays (6th gen): Low turn-on loss due to optimized wafers and finer process geometries (4) Plasma displays (7th gen): Thinner wafers and finer process geometries 300 to 400 V 2.8 2.6 2.4 2.2 2.0 1.8 1.6 1.4 High-speed: GT60M323 Ta = 25˚C Ta = 125˚C High-speed: GT50N322A(1000V) Low-VCE(sat): GT60M303 GT60M324 Eoff(mJ) @VCC = 140 V, IC = 50 A, VGG = 20 V, RG = 10 Ω, C = 0.33 μF, L = 30 μH VCE(sat)(V) @IC = 50 A, VGE = 15 V (4) Soft switching (6.5th gen): RC structure (6) Soft switching (6th gen): Thinner wafers and finer process geometries Prior to the development of IGBTs, power MOSFETs were used for power amplifier applications which require high input impedance and fast switching. However, at high voltages, the on-state resistance rapidly increases as the breakdown voltage increases. It is thus difficult to improve the conduction loss of power MOSFETs. On the other hand, the IGBT structure consists of a pnp bipolar transistor and a collector contact made on the p + layer. The IGBT has a low on-state voltage drop due to conductivity modulation. The following figure shows the V CE(sat) curve of a soft-switching 900-V IGBT. Toshiba has offered IGBTs featuring fast switching by using carrier lifetime control techniques. Now, Toshiba offers even faster IGBTs with optimized carrier injection into the coll ector p+ layer. In the future, Toshiba will launch IGBTs with varied characteristics optimized for high-current-conduction and high-frequency- switching applications. The improvements in IGBTs will be spurred by optimized wafers, smaller pattern geometries and improved carrier lifetime control techniques. ▼ 900-V IGBT for Soft-Switching Discrete IGBT Development Trends

– 4 –

4 Part Numbering Scheme

3 Discrete IGBT Product Lineup

Rating IC (A) @Ta = 25˚C DC Pulse TSON-8 SOP-8 TO-220SIS GT10G131 GT5G133 GT8G132GT8G151 GT30F124 GT45F127 GT30F125 GT45F128 GT30G124 GT30G125 GT45G127 GT45G128 GT30J124 GT30F131 TO-220SM(MXN) TO-3P(N) TO-3P(N)IS TO-3P(LH) 100 100 100 100 100 100 120 120 100 100 120 120 120 120 100 100 100 130 150 200 200 200 200 200 200 GT10J301 GT20J301 GT20J101 GT30J301 GT30J101 GT10Q301 GT10Q101 GT15Q301 GT15Q102 GT30J324 GT30J121 GT40J321 GT40J322 GT40J323 GT50J327 GT50J341 GT50J328 GT50MR21 GT50M322 GT60M324 GT50N322A GT50N324 GT50NR21 GT40QR21 GT40T321 GT30J122A GT30J126 GT30J322 GT35J321 GT40J325 GT15M321 GT35MR21 GT30J122 GT40J121 GT50J102 GT25Q301 GT25Q102 GT50J325 GT50J121 GT50J322 GT50J322H GT60J321 GT60J323 GT60J323H GT60N321 General-purpose motors General-purpose inverters Hard switching fc: up to 20 kHz High ruggedness Series General-purpose inverters Fast switching Hard switching fc: up to 50 kHz FS series Resonant switching Soft switching Soft-Switching Series Strobe flashes Plasma display panels PFC Version Serial number 1: N-channel 2: P-channel 3: N-channel with built-in freewheeling diode R: N-channel RC-IGBT with built-in freewheeling diode Voltage rating (see Table 1.) Collector current rating (DC) Discrete IGBT Letter Voltage (V) Letter Voltage (V)Voltage (V)Letter Example C D E F G H 150 200 250 300 400 500 J K L M N P 600 700 800 900 1000 1100 Q R S T U V 1200 1300 1400 1500 1600 1700 GT 60 M 3 03 A Applications and

Features

VCES (V) @Ta = 25˚C 600 1200 600 600 900 1000 1200 1050 1500 600 400 300 330 360 430 600 Table 1 : New product

– 5 – 5-1 General-Purpose Inverter 048 1 2 1 6 2 0 2 4 Carrier Frequency, fC (kHz) Loss (W/Tr) MOSFET IGBT: Ta = 25°C Ta = 125°C MOSFET (500 V / 50 A): Ta = 25°C Ta = 125°C IGBT: Ta = 25°C Ta = 125°C MOSFET (500 V / 50 A): Ta = 25°C Ta = 125°C @VGE = 15 V @ Ta = 125°C VCC = 300 V VGE = + 15 V di/dt –400 A/μs @fo = 50 Hz Po = 7.5 kW 002468 10 Collector - Emitter Voltage, VCE (V) Collector Current, IC (A) MOSFET VCE Ic t : 0.1μs/div VCE: 100 V/div IC: 10 A/div MOSFET MOSFET PL PLInverter Rectifier circuit Input Output CB Control IGBT IGBT IGBT IGBT ▼ IC - VCE Temperature Characteristics ▼ Turn-On Waveform ▼ Power Loss vs. Carrier Frequency Characteristics Our 3rd generation low-loss and low-noise IGBTs are ideal for inverter applications to reduce switching loss and thus improve energy efficiency. The following graphs compare the thermal and turn-on characteristics of our 3rd generation IGBTs and 500-V MOSFETs Low saturation voltage with minimal temperature dependence Simulation data for inverter applications Fast reverse-recovery characteristics due to built-in diode with optimal characteristics ▼ For general-purpose inverters The fast-switching (FS) series, a new addition to our third-generation IGBTs, features high ruggedness which helps to improve the energy efficiency of electronic equipment. General-Purpose Inverters Inverter Air Conditioners Inverter Washing Machines UPS Discrete IGBT Trend

– 6 – 5-1 General-Purpose Inverter Single Emitter Built-in FRD Gate Collector Gate Collector Emitter GT10Q101 GT10Q301 GT15Q102 GT15Q301 GT25Q102 GT25Q301 GT10J301 GT20J101 GT20J301 GT30J101 GT30J301 GT50J102 1200 1200 1200 1200 1200 1200 600 600 600 600 600 600 TO-3P(N) TO-3P(N) TO-3P(N) TO-3P(N) TO-3P(LH) TO-3P(LH) TO-3P(N) TO-3P(N) TO-3P(N) TO-3P(N) TO-3P(N) TO-3P(LH) 100 140 140 170 170 200 200 130 130 155 155 200 2.1 2.1 2.1 2.1 2.1 2.1 2.1 2.1 2.1 2.1 2.1 2.1 0.16 0.16 0.16 0.16 0.16 0.16 0.15 0.15 0.15 0.15 0.15 0.15 L L L L L L L L L L L L Built-in FRD Built-in FRD Built-in FRD Built-in FRD Built-in FRD Built-in FRD (FS: Fast Switching) Absolute Maximum Ratings Package VCE(sat) Typ. t f Typ. Main

Applications

Motor driving (UPS/PFC) High VCES (1200V) High VCES (600V) Low-frequency switching Power factor correction Features RemarksPart Number Circuit Configuration (*1) Load (*2) IC DC (A) Pulsed (A) PC Tc = 25˚C (W) VCES (V) Absolute Maximum Ratings IC DC (A) Pulsed (A) PC Tc = 25˚C (W) VCES (V) @IC (A) @VGE (V) (Ms)(V) GT30J121 GT30J126 GT30J324 GT50J121 GT50J325 600 600 600 600 600 TO-3P(N) TO-3P(N)IS TO-3P(N) TO-3P(LH) TO-3P(LH) 100 100 170 170 240 240 2.0 1.95 2.0 2.0 2.0 0.05 0.05 0.05 0.05 0.05 L L L L L Isolation Package Partial Switching Converter Partial Switching Converter Partial Switching Converter Built-in FRD Built-in FRD Package VCE(sat) Typ. t f Typ. Main (UPS/PFC/motor) Fast switching Features RemarksPart Number Circuit Configuration (*1) Load (*2) @VGE@IC (A) (V) (Ms)(V) ▼ Circuit Configurations ▼ For general-purpose invertersProduct Lineup 600-V and 1200-V IGBTs GT30J122 GT30J122A GT40J121 600 600 600 TO-3P(N)IS TO-3P(N) TO-3P(N)IS 100 100 100 120 2.1 1.7 1.45 0.25 0.2 0.2 R R R Absolute Maximum Ratings Package VCE(sat) Typ. t f Typ. Main Applications Features RemarksPart Number Circuit Configuration (*1) Load (*2) IC DC (A) Pulsed (A) PC Tc = 25˚C (W) VCES (V) @IC (A) @VGE (V) (Ms)(V) 600-V IGBTs for Low Frequency Switching 600-V Fast IGBTs (4th Generation) *1 ◆ : Single FRD: Fast Recovery Diode *2 R : Resistive load L : Inductive load : New product

– 7 – 5-2 Soft-Switching Applications VCE IC VCE IC VCE IC VCE IC AC Input Voltage Circuit IGBT Rating

100 V to 120 V

200 V to 240 V

100 V to 240 V

VCES = 900 V to 1050 V IC = 15 A to 60 A VCES = 600 V IC = 30 A to 60 A VCES = 1200 V to 1500 V IC = 40 A Voltage Resonance Waveform Current Resonance Waveform Microwave Ovens IH Rice Cookers IH Cookers MFPs IH: Induction heating MFP: Multifunction Printer Static inverters in IH cooktops, IH rice cookers and microwave ovens utilize a soft-switching technique which exhibits low switching loss. Toshiba offers IGBTs suitable for soft-switching applications.

– 8 – 5-2 Soft-Switching Applications Emitter Gate Collector N P P N N ▼ Cross-Sectional View of the RC-IGBT ▼ For soft switchingProduct Lineup The RC-IGBT (Reverse-Conducting IGBT) Series consists of a freewheeling diode monolithically integrated in an IGBT chip. This is realized by forming an N layer through the P layer on the collector side. The RC-IGBT Series is environmentally friendl y since it eliminates the need for a separate diode. Additionally, it also features a reduced thermal resistance of the freewheel ing diode. GT35MR21 GT50MR21 GT50NR21 GT40QR21 TO-3P(N)IS TO-3P(N) TO-3P(N) TO-3P(N) 900 900 1050 1200 100 100 100 230 230 230 1.6 1.7 1.8 1.9 Built-in FWD Built-in FWD Built-in FWD Built-in FWD 0.2 0.18 0.2 0.2 R R R R 6.5th generation Tj = 175˚C 6.5th generation Tj = 175˚C 6.5th generation Tj = 175˚C 6.5th generation Absolute Maximum Ratings Package VCE(sat) Typ. @Ta = 25˚C tf Typ. @Ta = 25˚C Main ApplicationsIH rice cookers and IH cooktops Voltage resonance Features RemarksPart Number Circuit Configuration (*1) Load (*2) IC DC (A) Pulsed (A) PC VGE (V) IC (A) TC = 25˚C (W) 150 175 175 175 Tj (˚C) VCES (V) (μs)(V) AC 100 V AC 200 V : New product*1 Abbreviation in the “Circuit Configuration” column FWD: Free-Wheeling Diode *2 Abbreviation in the “Load” column R : Resistive load 6.5th-Generation RC-IGBT Series (New Products)

– 9 – Single Emitter Built-in FRD Gate Collector Gate Collector Emitter GT30J322 GT35J321 GT40J321 GT40J322 GT40J323 GT40J325 GT50J322 GT50J322H GT50J327 GT50J341 GT50J328 GT60J321 GT60J323 GT60J323H GT15M321 GT50M322 GT60M324 GT50N322A GT50N324 GT60N321 GT40T321 600 600 600 600 600 600 600 600 600 600 600 600 600 600 900 900 900 1000 1000 1000 1500 100 100 100 100 100 100 100 100 100 100 120 120 120 120 120 120 120 120 120 120 120 170 130 130 140 200 140 200 170 170 156 254 156 150 170 230 2.1 1.9 2.0 1.7 2.0 1.45 2.1 2.2 1.9 1.6 2.0 1.55 1.9 2.1 1.8 2.1 1.7 2.2 1.9 2.3 2.15 R R R R R R R R R R R R R R R R R R R R R 0.25 0.19 0.11 0.2 0.06 0.2 0.25 0.11 0.19 0.15 0.10 0.30 0.16 0.12 0.20 0.25 0.11 0.10 0.11 0.25 0.24 Fast switching Fast switching Fast switching Fast switching Fast switching 6th generation 6th generation Tj = 175˚C Tj = 175˚C Fast switching Absolute Maximum Ratings Package VCE(sat) Typ. tf Typ. Main ApplicationsIH rice cookers and IH cooktops Current resonanceVoltage resonance Features RemarksPart Number Circuit Configuration (*1) Load (*2) IC DC (A) Pulsed (A) PC @VGE (V) @IC (A)TC = 25˚C (W) TO-3P(N)IS TO-3P(N)IS TO-3P(N) TO-3P(N) TO-3P(N) TO-3P(N)IS TO-3P(LH) TO-3P(LH) TO-3P(N) TO-3P(N) TO-3P(N) TO-3P(LH) TO-3P(LH) TO-3P(LH) TO-3P(N)IS TO-3P(N) TO-3P(N) TO-3P(N) TO-3P(N) TO-3P(LH) TO-3P(N) Built-in FRD Built-in FRD Built-in FRD Built-in FRD Built-in FRD Built-in FRD Built-in FRD Built-in FRD Built-in FRD Built-in FRD Built-in FRD Built-in FRD Built-in FRD Built-in FRD Built-in FWD Built-in FWD Built-in FWD Built-in FWD Built-in FWD Built-in FWD Built-in FWD Tj (˚C) VCES (V) (μs)(V) AC 200 V AC 200 V AC 100 V ▼ Circuit Configurations ▼ For soft switchingProduct Lineup IGBTs for Soft-Switching Applications : New product 6th generation Tj = 175˚C *1 Abbreviations in the “Circuit Configuration” column FRD: Fast Recovery Diode, FWD: Free-Wheeling Diode *2 Abbreviation in the “Load” column R : Resistive load 150 150 150 150 150 150 150 150 150 175 150 150 150 150 150 150 175 150 150 150 175

– 10 – 5-3 Strobe Flash Applications 5-2 Soft-Switching Applications Hard Switching SOA Locus for Hard Switching SOA IC IC IC VCE VCE VCE High-current, high-voltage locus Soft Switching SOA IC VCE IC VCE Thermal resistance limit area S/B limit area High-current, low-voltage and low-current, high-voltage locus SOA Locus for Soft Switching Switching Characteristics (Example) Current Resonance (Example) Voltage Resonance (Example) ▼ Comparisons Between Hard and Soft Switching (diagrams shown only as a guide) Strobe flash control is now prevalent in digital still cameras. Package sizes are getting smaller, and logic levels are increasingly used to represent the gate drive voltage. Toshiba offers compact IGBTs featuring low gate drive voltage. ■ As a voltage-controlled device, the IGBT requires only a few components for drive circuit. ■ IGBTs require fewer components for the strobe flash circuit (compared to SCRs). ■ Strobe flash IGBTs are capable of switching large currents. Single-Lens Reflex CameraDSC, Compact Camera

– 11 – 5-3 Strobe Flash Applications 20 kΩ P-ch N-ch 910 Ω 91 Ω 1.2 kΩ 470 Ω 3.3-V power supply 3 V Trigger transformer Xe lampResistor Resonant capacitor IGBT GT8G151 <Connection Examples> Collector 5,6,7,8 Gate Emitter 1,2,3 Main Capacitor Board connection example All the emitter terminals should be connected together. GT8G132 GT10G131 2.3 2.3 1.1 1.9 SOP-8 SOP-8 The IGBT can operate with a gate drive voltage of 2.5 V to 4.0 V. The common 3.3-V or 5-V internal power supply in a camera can be used as a gate drive power supply to simplify the power supply circuitry. A zener diode is included between the gate and emitter to provide ESD surge protection.

400 V / 150 A

400 V / 200 A

4.0 4.0 Gate Drive Voltage Min (V) Package Typ. Part Number P C (W) @Ta = 25˚C Package VCE(sat) (V) VCE(sat) (V) Part Number PC (W) @Ta = 25˚C GT8G151 0.83 TSON-8 ▼ Example of an IGBT Gate Drive Circuit (3.3-V Power Supply) GT5G133 VCES / IC

400 V / 130 A

Typ. 2.65 3.0 0.83

4.0 V / 150 A

4.0 V / 200 A

2.5 V / 150 A

2.5 V / 130 A TSON-8

(V) 2.5 2.5 2.5-V to 4.0-V Gate Drive Series 3.3-V Power Supply 5-V Power Supply : New product ▼ For strobe flashesProduct Lineup

– 12 – 5-4 Plasma Display Panel Applications

  • PDP (Sustain circuit) Panel Vsus X drive circuit Y drive circuit X electrodes (X output) Y electrodes (Y output) Sustain circuitEnergy recovery circuit Separation circuit ▼ Example of a Plasma Display Panel Drive Circuit GT30F124 GT30F125 GT45F127 GT45F128 GT30F131

300 V / 200 A

330 V / 200 A

360 V / 200 A

2.3 1.9 1.6 1.45 1.9 TO-220SIS TO-220SIS TO-220SIS TO-220SIS TO-220SM(MXN) V CES / Icp @3 μs Package RemarksVCE(sat) (V) Typ. @120 APart Number PC (W) @Tc = 25˚C Parallel MOSFETs have been used for the drive circuitry of plasma display panels (PDPs). Recently, however, IGBTs are commonly used in large current applications due to their superior current conduction capability. Plasma Displays 300-V IGBTs 6th generation 6th generation 6th generation 6th generation GT30G124 GT30G125 GT45G127 GT45G128

430 V / 200 A

2.5 2.1 1.7 1.55 TO-220SIS TO-220SIS TO-220SIS TO-220SIS V CES / Icp @3 μs Package RemarksVCE(sat) (V) Typ. @120 APart Number PC (W) @Tc = 25˚C 400-V IGBTs GT30J124 600 V / 200 A 262.4 TO-220SIS VCES / Icp @3 μs Package RemarksVCE(sat) (V) Typ. @120 APart Number PC (W) @Tc = 25˚C 600-V IGBTs ▼ For plasma display panelsProduct Lineup : New product : New product

– 13 –

6 Package Dimensions

▼ TSON-8 ▼ SOP-8▼ TO-220SM(MXN) Unit: mm 1, 2, 3. Emitter Gate 5, 6, 7, 8. Collector 6.0 ± 0.3 4.4 ± 0.2 0.4 ± 0.1 0.25 M 1.27 0.1 + 0.1 – 0.05 0.15 + 0.1 – 0.05 0.595 typ. 0.5 ± 0.2 5.5 max 5.0 ± 0.2 1.5 ± 0.2 0.1 1, 2, 3. Emitter 4. Gate 5, 6, 7, 8. Collector 3.1 ± 0.1 0.3 ± 0.050.25 0.15 0.15 0.2 0.65 ± 0.05 3.3 ± 0.1 0.85 ± 0.05 0.175 ± 0.03 3.1 ± 0.1 3.3 ± 0.1 10.16 ± 0.12 1.5 ± 0.1 10.35 ± 0.25 3.0 ± 0.25 9.14 + 0.26 – 0.25 2.55 2.55 A 0.81 ± 0.1 0.25 MA 1.3 ± 0.1 1.05 ± 0.1 1.7 ± 0.2 2.55 ± 0.25 8.12 ± 0.11 7.98 ± 0.1 1 2 3 0.1 ± 0.1 4.44 + 0.13 – 0.12 1. Gate 2. Collector 3. Emitter

– 14 – Unit: mm 2.03.3 max 2.0 ± 0.3 1.0 – 0.25 + 0.3 9.0 2.0 4.5 1.0 φ3.2 ± 0.215.9 max 0.6 – 0.1 + 0.3 1.8 max 2.8 4.8 max123 20.5 max φ3.3 ± 0.2 6.011.0 2.0 4.0 26.0 ± 0.5 2.50 2.5 3.0 1.0 – 0.25 + 0.3 0.6 – 0.10 + 0.25 123 2.8 5.2 max 20.0 ± 0.6 1.5 1.5 2.0 1.5 5.45 ± 0.2 15.5 5.5 1.0 3 2 1 19.4 min 3.6 max 15.8 ± 0.5 3.5 + 0.2 – 0.1 φ3.6 ± 0.2 5.45 ± 0.2 1.0 2.0 + 0.25 – 0.15 0.6 + 0.25 – 0.15 3.15 1. Gate 2. Collector 3. Emitter 1. Gate 2. Collector 3. Emitter 1. Gate 2. Collector 3. Emitter 10 ± 0.3 2.7 ± 0.2 0.69 ± 0.15 2.54 2.54 φ3.2 ± 0.2 15 ± 0.3 0.64 ± 0.15 2.6 ± 0.1 4.5 ± 0.2 13 ± 0.5 2.8 max 3.0 3.9 1 2 3 1.14 ± 0.15 φ0.25 M A 1. Gate 2. Collector 3. Emitter ▼ TO-220SIS▼ TO-3P(LH) ▼ TO-3P(N)▼ TO-3P(N)IS

– 15 –

7 Final-Phase and Obsolete Products

The following products are in stock but are being phased out of production. The recommended replacements that continue to be available are listed in the right-hand column. However, the characteristics of the recommended replacements may not be exactly the same as those of the final-phase and obsolete products. Before using a recommended replacement, be sure to check that it is suitable for use under the intended operating conditions. Application Package PackageFinal-Phase or Obsolete Product Recommended Obsolete Replacements Absolute Maximum Ratings VCES (V) I C (A) DC Absolute Maximum Ratings VCES (V) I C (A) DC MG30T1AL1 MG60M1AL1 GT40M101 GT40M301 GT40Q322 GT40Q323 GT40T101 GT40T301 GT50L101 GT50M101 GT50Q101 GT50S101 GT50T101 GT60J101 GT60J322 GT60M101 GT60M102 GT60M103 GT60M104 GT60M105 GT60M301 GT60M302 GT60M305 GT60M322 GT60N323 GT80J101 GT80J101A GT8J101 GT8J102 GT8N101 GT8Q101 GT8Q102 GT10Q311 GT15J101 GT15J102 GT15J103 GT15N101 GT15Q101 GT15Q311 GT20J311 GT25H101 GT25J101 GT25J102 GT25Q101 GT30J311 GT50J101 GT5G101 GT5G102 GT5G103 GT8G101 GT8G102 GT8G103 GT8G121 GT10G101 GT10G102 GT15G101 GT20G101 GT20G102 GT25G101 GT25G102 GT50G101 GT50G102 GT75G101 GT20D101 GT20D201 GT60N321 GT10Q101 GT10Q101 GT20J101 GT15Q102 GT15Q102 GT30J121 GT30J121 GT30J126 GT25Q102 GT50J121 IH IH TO-3P(N)IS TO-3P(LH) TO-3P(N) TO-3P(N) TO-3P(LH) TO-3P(LH) TO-3P(L) TO-3P(L) IH IH IH TO-3P(L) TO-3P(LH) TO-3P(L) TO-3P(L) TO-3P(L) TO-3P(L) TO-3P(L) TO-3P(LH) TO-3P(LH) TO-3P(LH) TO-3P(LH) TO-3P(LH) TO-3P(L) TO-3P(LH) TO-220NIS TO-220SM TO-3P(N) TO-3P(N) TO-220SM TO-3P(SM) TO-3P(N) TO-220NIS TO-220SM TO-3P(N) TO-3P(N) TO-3P(SM) TO-3P(SM) TO-3P(N) TO-3P(N) TO-3P(N)IS TO-3P(LH) TO-3P(SM) TO-3P(L) NPM DP DP NPM NPM DP DP TO-220NIS TO-220NIS TO-220NIS TO-220FL TO-220FL TO-220FL TO-220FL TO-3P(N) TO-3P(N) TO-3P(N) TO-3P(L) TO-3P(L) TO-3P(LH) TO-3P(N) TO-3P(N) TO-3P(N) TO-3P(N) TO-3P(N) TO-3P(N) TO-3P(N) TO-3P(N)IS TO-3P(LH) TO-3P(LH) 1500 900 900 900 1200 1200 1500 1500 800 900 1200 1400 1500 600 600 900 900 900 900 900 900 900 900 950 1050 600 600 600 600 1000 1200 1200 1200 600 600 600 1000 1200 1200 600 500 600 600 1200 600 600 400 400 400 400 400 400 400 400 400 400 400 400 400 400 400 400 400 250 –250 130 (pulsed) 130 (pulsed) 130 (pulsed) 130 (pulsed) 150 (pulsed) 150 (pulsed) 150 (pulsed) 130 (pulsed) 130 (pulsed) 170 (pulsed) 130 (pulsed) 130 (pulsed) 170 (pulsed) 150 (pulsed) 100 (pulsed) 100 (pulsed) 150 (pulsed) –20 1000 1200 1200 600 1200 1200 600 600 600 1200 600 Soft switching Resonant switching General-purpose motors General-purpose inverters Strobe flashes Audio amps

Website: http://www.semicon.toshiba.co.jp/eng Semiconductor Company BCE0010H Discrete IGBTs Previous edition: BCE0010G 2011-3(1.5k)SO-DQ 2011 OVERSEAS SUBSIDIARIES AND AFFILIATES Toshiba America Electronic Components, Inc.

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  • Kuala Lumpur Head Office Tel: (03)5631-6311 Fax: (03)5631-6307
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  • Shanghai PUXI Branch Tel: (021)6139-3888 Fax: (021)6190-8288
  • Hangzhou Office Tel: (0571)8717-5004 Fax: (0571)8717-5013
  • Nanjing Office Tel: (025)8689-0070 Fax: (025)8689-0070 Toshiba Electronics (Dalian) Co., Ltd. Tel: (0411)8368-6882 Fax: (0411)8369-0822 Tsurong Xiamen Xiangyu Trading Co., Ltd. Tel: (0592)226-1398 Fax: (0592)226-1399 Toshiba Electronics Korea Corporation
  • Seoul Head Office Tel: (02)3484-4334 Fax: (02)3484-4302
  • Daegu Office Tel: (053)428-7610 Fax: (053)428-7617 Toshiba Electronics Taiwan Corporation
  • Taipei Head Office Tel: (02)2508-9988 Fax: (02)2508-9999 2011-3 (As of February 14, 2011) Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the inf ormation in this document, and related hardware, software and systems (collectively “Product”) without notice. This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with TOSHIBA ’s written permission, reproduction is permissible only if reproduction is without alteration/omission. Though TOSHIBA works continually to improve Product's quality and reliability, Product can malfunction or fail. Customers are r esponsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily injury or damage to property, including data loss or corruption. Before customers use the Product, create designs including the Product, or incorporate the Product into their own applications, customers must also refer to and comply with (a) the latest versions of al l relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes for Product and the precautions and condit ions set forth in the "TOSHIBA Semiconductor Reliability Handbook" and (b) the instructions for the application with which the Product will be used with or for. Customers are solely responsible for all aspects of their own product design or applications, including but not limited to (a) determining the appropriateness of the use of this Product in such design or applications; (b) evaluating and determining the applicability of any information contained in this document, or in charts, diagrams, programs, algorithms, sample application circuits, or any other referenced documents; and (c) validating all operating parameters for such designs and applications. TOSHIBA ASSUMES NO LIABILITY FOR CUSTOMERS' PRODUCT DESIGN OR APPLICATIONS. Product is intended for use in general electronics applications (e.g., computers, personal equipment, office equipment, measuring equipment, industrial robots and home electronics appliances) or for specific applications as expressly stated in this document. Product is neither intended nor warranted for use in equipment or systems that require extraordinarily high levels of quality and/or reliability and/or a malfunction or failure of which may cause loss of human life, bodily injury, serious property damage or serious public impact (“Unintended Use”). Unintended Use includes, without limitation, equipment used in nuclear facilities, equipment used in the aerospace industry, medical equipment, equipment used for automobiles, trains, ships and other transportation, traffic signaling equipment, equipment used to control combustions or explosions, safety devices, elevators and escalators, devices related to electric power, and equipment used in finance-related fields. Do not use Product for Unintended Use unless specifically permitted in this document. Do not disassemble, analyze, reverse-engineer, alter, modify, translate or copy Product, whether in whole or in part. Product shall not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable laws or regulations. The information contained herein is presented only as guidance for Product use. No responsibility is assumed by TOSHIBA for any infringement of patents or any other intellectual property rights of third parties that may result from the use of Product. No license to any intellectual property right is granted by this document, whether express or implied, by estoppel or otherwise. ABSENT A WRITTEN SIGNED AGREEMENT, EXCEPT AS PROVIDED IN THE RELEVANT TERMS AND CONDITIONS OF SALE FOR PRODUCT, AND TO THE MAXI MUM EXTENT ALLOWABLE BY LAW, TOSHIBA (1) ASSUMES NO LIABILITY WHATSOEVER, INCLUDING WITHOUT LIMITATION, INDIRECT, CONSEQUENTIAL, SPECIAL, OR INCIDENTAL DAMAGES OR LOSS, INCLUDING WITHOUT LIMITATION, LOSS OF PROFITS, LOSS OF OPPORTUNITIES, BUSINESS INTERRUPTION AND LOSS OF DATA, AND (2) DISCLAIMS ANY AND ALL EXPRESS OR IMPLIED WARRANTIES AND CONDITIONS RELATED TO SALE, USE OF PRODUCT, OR INFORMATION, INC LUDING WARRANTIES OR CONDITIONS OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE, ACCURACY OF INFORMATION, OR NONINFRINGEMENT. Do not use or otherwise make available Product or related software or technology for any military purposes, including without l imitation, for the design, development, use, stockpiling or manufacturing of nuclear, chemical, or biological weapons or missile technology products (mass destruction weapons). Product and related software and technology may be controlled under the Japanese Foreign Exchange and Foreign Trade Law and the U.S. Export Administration Regulations. Exp ort and re-export of Product or related software or technology are strictly prohibited except in compliance with all applicable export laws and regulations. Product may include products subject to foreign exchange and foreign trade control laws. Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Prod uct. Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of noncompliance with applicable laws and regulations.