GT15J311 TOSHIBA | Alldatasheet
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TOSHIBA GT15J311,GT15J311(SM) TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT15J311, GT15J311(SM) HIGH POWER SWITCHING APPLICATIONS Unit in mm GT15)311 MOTOR CONTROL APPLICATIONS voamex © The 3rd Generation 3 || | al FA | |e e fo) ae re Enhancement-Mode tet © High Speed : tp=0.30ys (Max.) (ig =15A) | 2 e@ Low Saturation Voltage : VCE (sat)=2.7V (Max.) (I¢=15A) ozs s e FRD included between Emitter and Collector. 25420.25 2.54 £0.25 gq +o “ MAXIMUM RATINGS (Ta = 25°C) er a |2 CHARACTERISTIC SYMBOL UNIT 1. GATE 2. COLLECTOR (HEAT SINK) Collector-Emitter Voltage Vows | 600 | V |} % EMITTER Gate-Emitter Voltage VGES JEDEC = BIA = Collector Current c | ims | icp | 30 | A | [rosa _2-1081C Emitter-Collector Forward Weight : 15g Current [ims | iw [30 [ A | Collector Power Dissipation GT15J311(SM) Py (Te=25°C) c 70 w - 10.31ax. Junction Temperature a oe | ee Storage Temperature Range —55~150 SS L | f EQUIVALENT CIRCUIT 4 Ur fy iS 5 Collector il 076 3 254 254 bh-t- ffs] DS Emitter 1. GATE 2. COLLECTOR (HEAT SINK) 3. EMITTER JEDEC - TOSHIBA 2-10S2C Weight : 1.4g Q61001EAA2 @ TOSHIBA is continually working to improve the quality and the reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fall due to thei inherent electrical sensitivity and. vulnerability to physical stress. it's the responsibilty of the buyer, when utlizing TOSHIBA products, to observe standards of safety, and to avoid situations in which a malfunction or failure of a TOSHIBA product could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified Operating ranges as set forth in the most recent products specifications. Also, please keep in mind the precautions and conditions set forth in the TOSHIBA Semiconductor Reliability Handbook © ‘he information contained herein is presented only as a guide for the applications of our products. No_ responsibilty is assumed by, TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. @ The information contained herein is subject to change without notice 1998-10-12 1/6
TOSHIBA GT15J311,GT15J311(SM) ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC SYMBOL TEST CONDITION Gate Leakage Current | _Tgns |Van==20V, Von=0 [= [soo aa] Collesior Cut-Off Current | Ions _[Von=600V, Von =0 [= [=| 10] ma | Gate-Emitter Cut-Off ccm verse [= [nl >| Collector-Emitter Saturation SA fiw fesenvarey [=| al wl Von=20V, VGn=0, f=IMHe | — | 950, — | oF | Inductive Load [ = | o12 | — | Switching Voc=300V, I¢=15A | — | 040] — | Time Vag=+15V, Rg=750 [= [ois [a0] “* Woe [= Toso [— | [Peak Forward Voltage | Vr [Ip=15A,Von=0 ———s«(| — | — | 20] v | [Reverse Recovery Time | tr _|IR=15A, di/di=—100A7ps | — | — | 200| ns _| Thermal Resistance (Diode) | Rugg |__| — | — | 845 f07w| (Note 1) Switching time measurement circuit and input/output waveforms j i 1 io i, Rg ptt. 9 VOE_ 10% Lf' X10% 10% +f ' 410% te feel Vcr fa cof! | ee ta(on)! fy ---4-- ott wit ! toff | "ton | Switching loss measurement waveforms Vv { \\ i 4 H f i i VCE \\ 10% H i Lt ' Eogf * "Eon ' 1998-10-12 2/6
TOSHIBA GT15J311,GT15J311(SM) +50 Ic - VCE sy VcE - VGE COMMON = COMMON I] IPT y 7 Td i eee seen 2 “CT PEELE e “COED ese | CESS Fa / aT | ia f» Bee | Se 0/2 —ee os on Za Pe ee ne ey g TTT US > ee | g ft} iti Trrry COLLECTOR-EMITTER VOLTAGE Vcg (V) GATE-EMITTER VOLTAGE VgE (V) VCE - VGE VCE - VGE S 2 S 20) = "ome || ITLL 2 "Tomer 1 ILL SCECcCHIC og “terete 8 8 Passe 2 OPC Cea as a BOC eee es a , CORSE PAE PE 2 Oren PCOS ESE CoS A ie GATE-EMITTER VOLTAGE VgE (V) GATE-EMITTER VOLTAGE VgE (V) Ic - VGE VCE (sat) — Te +30) a: See eee TPT PPT) Hee 2 go 4 st -_ | a eee PLP) aeees=== 7 7 pe | PRRRERERSY * TET EY TTT} Pep ) af ol 0 4 8 12 16 20 -60 -20 20 60 100 140 GATE-EMITTER VOLTAGE VgE (V) CASE TEMPERATURE Te (°C) «7798-10-12 3/6
GT15J311,GT15)311( SWITCHING TIME. ton, tr ac COMMON EMITTER SWITCHING TIME ton, tr - an a Yeonspov. vac maar = 25°C FAA 4 RERSERE Cath Bee25%, a : SS : FREE EERE EES Pop eee ye 2 SCE ee SSE ta : CT ae 2 Eero z Lae SaaS >— aa é Peer | [III Fa en a ee = ae IS 00 aa lll 2 S52c==:acGseoe5 2 0) eS & = = —— z aaa MON EMITTER 5 aaa a sae aa Foon s00v E 0.03] 4-4 e sd voce tisy = | COOeeeee
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