GT15G101 TOSHIBA | Alldatasheet
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TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N-CHANNEL IGBT STROBE FLASH APPLICATIONS Unit in mm e@ High Input Impedance totoa 932402 27802 F T oct = e Low Saturation Voltage : VCE (sat)=8V (Max.) (I¢=170A) al oT en © Enhancement-Mode 3 7 x 3 fa © 20V Gate Drive 4 | EL | MAXIMUM RATINGS (Ta = 25°C) | : Hl CHARACTERISTIC SYMBOL | RATING | UNIT ]] 025+0.15 + | e | Collector-Emitter Voltage VcES 2:5420.25, 2:54£0.25 Gate-Emitter Voltage VGES be a ae Collector Current pe ic 6 A is 3 " 1. GATE Collector Power Ta=25°C | Po | 20 | w 2. COLLECTOR Dissipation Te=25°C [ Po [| 40 | 3. EMITTER Junction Temperature JEDEC = Storage Temperature Range [Screw Torque | | em |[rosHBA _2-10R1¢ Weight : 1.7g ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC SYMBOL TEST CONDITION | a. | rye. [ax. [unr] Von=£25V, Von=0 | — | — [+100] na | Collector Cut-off Current Ices _|Vor=400V, Van=0 [| — | — | 10] pa | Gate-Emitter Cut-off Voltage [VaR (OFF)|Io=1mA, Von=5V [4] 5] avi Collector-Emitter I¢=170A, =2 Puls Saturation Voltage VCE (sat) |IO=170A, VGE=20V (Pulsed) I-| s| av | Von=10V, Vgn=0, f=imEz | — | 2000| — | oF | wer eK Te La Time frat time [te | YN toons | 40 Fall Time tf irs 100ns soov | — | 40] 60 fiiemmat Revstnee | Raga | id | | 2 | Q61001EAA2 malfunction or ‘all due to their inherent electrical Sensitivity and vulnerability to physical Stress. is the responsibilty of the buyer, when lang TOSHIBA products, to observe standards of safety, and to avoid situations in which a malfunction or failure of a TOSHIBA product could cause loss ‘of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified Operating. ranges as set forth in the most recom products specifications. Also, please keep in mind the precautions and conditions set forth in the TOSHIBA Semiconductor Reliability Handbook. © The information contained herein is presented only as a guide for the applications of our products. No. responsibility is assumed by TOSHIBA CORPORATION for any Infringements of intellectual property or other rignts of the third parties Which may result from Its use. NO license Is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. @ The information contained herein is subject to change without notice. 1997-02-03 1/3
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