GT10Q101 TOSHIBA | Alldatasheet

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TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT10Q101 High Power Switching Applications

  • The 3 rd Generation
  • Enhancement-Mode
  • High Speed: tf = 0.32 µs (max)
  • Low Saturation Voltage: VCE (sat) = 2.7 V (max) Maximum Ratings (Ta ==== 25°C)çççç Characteristic Symbol Rating Unit Collector-emitter voltage V CES 1200 V Gate-emitter voltage V GES ±20 V DC I C 10 Collector current 1 ms I CP 20 A Collector power dissipation (Tc = 25°C) PC 140 W Junction temperature T j 150 °C Storage temperature range T stg −55~150 °C Unit: mmç JEDEC ― JEITA ― TOSHIBA 2-16C1C Weight: 4.6 g (typ.) Preliminary

Electrical Characteristics (Ta ==== 25°C) Characteristic Symbol Test Condition Min Typ. Max Unit Gate leakage current I GES V GE = ±20 V, VCE = 0   ±500 nA Collector cut-off current I CES V CE = 1200 V, VGE = 0   1.0 mA Gate-emitter cut-off voltage V GE (OFF) I C = 1 mA, VCE = 5 V 4.0  7.0 V Collector-emitter saturation voltage V CE (sat) I C = 10 A, VGE = 15 V  2.1 2.7 V Input capacitance C ies V CE = 50 V, VGE = 0, f = 1 MHz  600  pF Rise time t r  0.07  Turn-on time t on  0.30  Fall time t f  0.16 0.32 Switching time Turn-off time t off Inductive Load VCC = 600 V, IC = 10 A VGG = ±15 V, RG = 75 Ω (Note1)  0.50  µs Thermal resistance R th (j-c)    0.89 °C/W Note1: Switching time measurement circuit and input/output waveforms Note2: Switching loss measurement waveforms 10% 90% VGE VCE IC Eoff E on 0 10% GT10Q301 RG IC VCE L V CC −VGE 10% 90% VGE VCE IC td (off) toff td (on) t r ton tf 10% 10% 10% 90% 10% 90%

Collector current I C (A) Collector-emitter voltage V CE (V) Collector-emitter voltage V CE (V) IC – VCE Collector current I C (A) Gate-emitter voltage V GE (V) VCE – VGE Collector-emitter voltage V CE (V) Gate-emitter voltage V GE (V) VCE – VGE Collector-emitter voltage V CE (V) Gate-emitter voltage V GE (V) VCE – VGE Gate-emitter voltage V GE (V) IC – VGE Case temperature Tc (°C) VCE (sat) – Tc Collector-emitter saturation voltage VCE (sat) (V) 0 4 8 12 16 20 Common emitter Tc = −40°C 20 10 IC = 4 A 0 4 8 12 16 20 Common emitter Tc = 125°C 10 20 IC = 4 A 0 4 8 12 16 20 Common emitter Tc = 25°C 20 10 IC = 4 A −60 −20 20 60 100 140 Common emitter VGE = 15 V IC = 4 A 0 4 8 12 16 20 Tc = 125°C Common emitter VCE = 5 V −40 0 1 2 3 4 5 VGE = 10 V Common emitter Tc = 25°C

Switching loss E on, Eoff ( m J ) Switching time t off, tf ( µs) Gate resistance R G ( Ω ) Switching time t on, tr – RG Switching time t on, tr ( µs) Collector current I C (A) Switching time t on, tr – IC Switching time t on, tr ( µs) Gate resistance R G ( Ω ) Switching time t off, tf – RG Switching time t off, tf ( µs) Collector current I C (A) Switching time t off, tf – IC Gate resistance R G ( Ω ) Switching loss E on, Eoff – RG Collector current I C (A) Switching loss E on, Eoff – IC Switching loss E on, Eoff ( m J ) 0.5 0.3 0.03 3 5 10 30 50 0.05 0.1 0.01 100 300 500 tr ton Common emitter VCC = 600 V VGG = ±15 V IC = 10 A : Tc = 25°C : Tc = 125°C 0.3 3 5 10 30 50 0.5 0.1 100 300 500 Eoff Eon Common emitter VCC = 600 V VGG = ±15 V IC = 10 A : Tc = 25°C : Tc = 125°C Note2 2 4 0 0.5 0.1 0.01 0.03 6 8 10 12 Common emitter VCC = 600 V VGG = ±15 V RG = 75 Ω : Tc = 25°C : Tc = 125°C tr ton 0.3 0.05 0.3 0 2 4 6 8 10 0.1 0.05 Common emitter VCC = 600 V VGG = ±15 V RG = 75 Ω : Tc = 25°C : Tc = 125°C tf toff 0.5 5 10 30 50 100 3 500 0.05 0.3 0.5 300 0.1 toff tf Common emitter VCC = 600 V VGG = ±15 V IC = 10 A : Tc = 25°C : Tc = 125°C 0 2 4 6 8 10 12 0.3 0.1 0.01 0.03

10 Common emitter

VCC = 600 V VGG = ±15 V RG = 75 Ω : Tc = 25°C : Tc = 125°C Note2 Eoff Eon 0.5 0.05

Transient thermal resistance Rth (t) ( ° C / W ) Collector current I C (A) Collector-emitter voltage V CE (V) C – VCE Capacitance C (pF) Gate-emitter voltage V GE (V) Gate charge Q G (nC) VCE, VGE – QG Collector-emitter voltage V CE (V) Collector-emitter voltage V CE (V) Safe operating area Collector current I C (A) Collector-emitter voltage V CE (V) Reverse bias SOA Pulse width t w (s) Rth (t) – tw 10−3 102 10−5 10 −4 10 −3 10−2 10 −1 10 0 10 1 10 2 10−2 10−1 100 101 10−4 Tc = 25°C Common emitter RL = 60 Ω Tc = 25°C 20 40 60 80 100 200 400 600 800 1000 VCE = 200 V 600 400 0.3 1 3 10 0.5 30 100 300 3000 1000 0.1 100 *: Single nonrepetitive pulse Tc = 25°C Curves must be dilated linearly with increase in temperature. IC max (pulsed)* IC max (continuous) DC operation 1 ms* 100 µs* 50 µs* 10 ms* 100 3000 300 1000 Common emitter VGE = 0 f = 1 MHz Tc = 25°C 0.1 0.3 1 3 10 30 1000 100 Cies Cres Coes 0.3 0.5 0.1 Tj <= 125°C VGE = ±15 V RG = 75 Ω 1 3 10 30 100 300 3000 1000

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