GT10J321

GT10J321 TOSHIBA | Alldatasheet

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TOSHIBATOSHIBATOSHIBATOSHIBA GT10J321 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Chanenel IGBT GT10J321 High Power Switching Applications Fast Switching Applications

• The 4th generation
• Enhancement-mode
• Fast Switching(FS) :Operating frequency up to 150kHz(Reference)
• High speed :tf=0.03μs(typ.)
• Low switching loss :Eon=0.26mJ(typ.) :Eoff=0.18mJ(typ.)
• Low saturation voltage :VCE(sat)=2.0V(typ.)
• FRD included between emitter and collector Maximum Ratings (Ta=25℃)Maximum Ratings (Ta=25℃)Maximum Ratings (Ta=25℃)Maximum Ratings (Ta=25℃) Characteristic Symbol Ratings Unit Collector-emitter voltage VCES 600 V Gate-emitter voltage VGES ±20 V DC IC 10 1ms ICP 20 Emitter-collector DC IF 10 forward current 1ms IFM 20 Collector power dissipation (Tc=25℃) Junction temperature Tj 150 ℃ Storage temperature range Tstg -55～150 ℃ 2001-6- 1/6 Collector current PC 29 W A A PreliminaryPreliminaryPreliminaryPreliminary

TOSHIBATOSHIBATOSHIBATOSHIBA GT10J321 Electrical Characteristics(Ta=25℃)Electrical Characteristics(Ta=25℃)Electrical Characteristics(Ta=25℃)Electrical Characteristics(Ta=25℃) Test Condition IGES VGE=±20V,VCE=0 ±500 ICES VCE=600V,VGE=0 VGE(OFF) IC=1mA,VCE=5V VCE(sat) IC=10A,VGE=15V Cies VCE=10V,VGE=0,f=1MHz Turn-on delay time td(on) Rise Time tr Inductive Load Turn-on Time ton VCC=300V,IC=10A Turn-off delay time td(off) VGG=+15V,RG=68Ω Fall Time tf (Note 1) Turn-off Time toff (Note 2) Turn-on switching loss Eon Turn-off switching loss Eoff VF IF=10A,VGE=0 trr IF=10A,di/dt=-100A/μs Thermal resistance(IGBT) Rth(j-c) ― Thermal resistance(Diode) Rth(j-c) ― 2001-6- 2/6 0.06 2.0 V μs- Characteristic Symbol 2.45 pF UnitTyp. Max 1500 nA mA V6.5 1.0 Gate-emitter cut-off voltage 0.24 3.5 Gate leakage current Collector cut-off current 0.03 0.17 Collector-emitter saturation volatage - Min Switching loss Input capacitance - Switching time 0.03 0.30 mJ- 0.18 - -- 0.26 0.15 V Reverse recovery time -- 200 ns Peak forward voltage -- 2.0 -- 4.31 ℃/W -- 4.90 ℃/W PreliminaryPreliminaryPreliminaryPreliminary

TOSHIBATOSHIBATOSHIBATOSHIBA GT10J321 2001-6- 3/6 IC - VGE 0 4 8 12 16 20 Gate-emitter voltage V GE (V) Collector current IC (A) -40 Tc = 25℃ 125 Common emitter VCE CE CE CE = 5V VCE(sat) - Tc -60 -20 20 60 100 140 Case temperature Tc (℃) Collector-emitter saturation voltage VCE(sat) (V) IC = 2A Common emitter VGEGEGEGE = 15V VCE - VGE 0 4 8 12 16 20 Gate-emitter voltage V GE (V) Collector-emitter voltage VCE (V) Common emitter Tc = -40℃ VCE - VGE 048 1 2 1 6 2 0 Gate-emitter voltage V GE (V) Collector-emitter voltage VCE (V) Common emitter Tc = 125℃ IC = 5A IC = 5A VCE - VGE 0 4 8 12 16 20 Gate-emitter voltage VGE (V) Collector-emitter voltage VCE (V) Common emitter Tc = 25℃ IC = 5A IC - VCE 012345 Collector-emitter voltage V CE (V) Collector current IC (A) Common emitte Tc = 25℃ VGE = 8V Reference

TOSHIBATOSHIBATOSHIBATOSHIBA GT10J321 2001-6- 4/6 Switching time toff, tf, td(off) - RG 0.01 0.1 1 10 100 1000 Gate resistance RG (Ω) Switching time toff, tf td(off) (μs) tf td(off) toff Switching loss Eon, Eoff - RG 0.01 0.1 1 10 100 1000 Gate rtesistance RG (Ω) Switching loss Eon, Eoff (mJ) Eon Eoff Switching time on, tr, td(on) - IC 0.01 0.1 02468 1 0 Collector current IC (A) Switching time ton, tr, td(on) (μs) ton td(on) tr Switc hi off, tf, td(off) - IC 0.01 0.1 02468 1 0 Collector current IC (A) Switching time toff, tf, td(off) (μs) tf td(off) toff エミッタ接地 VCCCCCCCC=300V VGGGGGGGG=15V RGGGG=68Ω ：Tc=25℃ ：Tc=125℃ （Note１） Switching loss Eon, Eoff - IC 0.01 0.1 02468 1 0 Collector current IC (A) Switching loss Eon, Eoff (mJ) Eon Eoff Switching time on, tr, td(on) - RG 0.01 0.1 1 10 100 1000 Gate resistance RG (Ω) Switching time ton, tr, td(on) (μs) ton td(on) tr Common emitter VCCCCCCCC=300V VGGGGGGGG=15V ICCCC=10A ：Tc=25℃ ：Tc=125℃ （Note2） Common emitter VCCCCCCCC=300V VGGGGGGGG=15V ICCCC=10A ：Tc=25℃ ：Tc=125℃ （Note1） Common emitter VCCCCCCCC=300V VGGGGGGGG=15V ICCCC=10A ：Tc=25℃ ：Tc=125℃ （Note1） Common emitter VCCCCCCCC =300V VGGGGGGGG =15V RGGGG=68Ω ：Tc=25℃ ：Tc=125℃ （Note2） Reference Common emitter VCCCCCCCC=300V VGGGGGGGG=15V RGGGG=68Ω ：Tc=25℃ ：Tc=125℃ （Note１） Switching time ton,tr,td(on) - RG Switching time ton,tr,td(on) - IC Switching time toff,tf,td(off) - RG Switching time toff,tf,td(off) - IC Common emitter VCCCCCCCC=300V VGGGGGGGG=15V RGGGG=68Ω ：Tc=25℃ ：Tc=125℃ （Note１）

TOSHIBATOSHIBATOSHIBATOSHIBA GT10J321 2001-6- 5/6 VCE, VGE - QG 100 200 300 400 500 0 2 04 06 08 0 Gate chrage QG (nC) Collector-emitter voltage VCE (V) Gate-emitter voltage VGE (V) VCE=300V 100 200 trr, Irr - IF 100 02468 1 0 Forward current IF (A) Reverse recovery current Irr (A) 100 1000 Reverse recovery time trr (ns) Irr trr C-VCE 100 1000 10000 0.1 1 10 100 1000 Collector-emitter voltage VCE (V) Capacitance C (pF) IF-VF 0 0.4 0.8 1.2 1.6 2 Forward voltage V F (V) Forward current IF (A) -40℃ Tc=25℃ 125℃ Common collector VGEGEGEGE=0 Common collector di/dt=-100A/μs VGEGEGEGE =0 ：Tc=25℃ ：Tc=125℃ Cies Coes Cres Common emitter VGEGEGEGE =0 f=1MHz Tc=25℃ Safe operati 0.1 100 1 10 100 1000 Collector-emitter voltage VCE (V) Collector current IC (A) 10ms10ms10ms10ms ** 1ms1ms1ms1ms 100 μs100 μs100 μs100 μs 50 μs50 μs50 μs50 μs** Common emitter RLLLL=30Ω Tc=25℃ Reverse bias SOA 0.1 100 1 10 100 1000 Collector-emitter voltage VCE (V) Collector current IC (A) Tj≦125℃ VGEGEGEGE=15V RGGGG=68Ω Reference Safe operating area *：Single nonrepetitive pulse Tc=25 ℃ Curves must be dilated linearly with increase in temperature. DC operation Ic max (continuous) Ic max (pulsed)*

TOSHIBATOSHIBATOSHIBATOSHIBA GT10J321 2001-6- 6/6 100 10-1 10-2 10-5 10-4 10-3 10-1 100 101 10210-2 Pulse w (s) Transient thermal resistance rth(t) (℃/W) rth(t) - tw TC = 25℃ FRD IGBT Reference 10-3 10-4 101 102 Pulse width tW (s)