GPU200HF120D2SE LUGUANG | Alldatasheet
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1200V/200A 2 in one-package Preliminary Data Features： 1200V/200A,VCE(sat)(typ)=2.30V SPT（Soft Punch Through）technology Lower losses Higher system efficiency Excellent short-circuitcapability Square RBSOA General Applications： LGE’s IGBTs offer ultrafast switching speed for application such as welding, inductive heating, UPS and other high frequency applications Absolute Maximum Ratings of IGBT VCES Collector toEmitter Voltage 1200 V VGES ContinuousGate to EmitterVoltage ±30 V IC ContinuousCollector Current TC = 25°C 400 A TC = 100°C 200 ICM Pulse CollectorCurrent TJ = 150°C 400 A PD MaximumPower Dissipation(IGBT) TC = 25°C, TJ = 150°C 835 W tsc ShortCircuit WithstandTime > 10 µs TJ MaximumIGBTJunctionTemperature 150 °C TJOP MaximumOperatingJunctionTemperatureRange -40 to+150 °C Tstg StorageTemperatureRange -40 to+125 °C Absolute Maximum Ratings of Freewheeling Diode VRRM RepetitivePeakReverseVoltagePreliminaryData 1200 V IF DiodeContinuousForward Current TC = 25°C 400 A TC = 100°C 200 IFM DiodeMaximumForwardCurrent 400 A Equivalent Circuit Schematic http://www.lgesemi.com Revision:20241125-P1 mail:lge@lgesemi.com
Electrical Characteristics of IGBT at TJ = 25°C(UnlessOtherwiseSpecified) Parameter Te st Conditions Min Typ Max Unit BVCES Collectorto EmitterBreakdown Voltage VGE= 0V,IC= 1mA 1200 V ICES Collectorto Emitter Leakage Current VGE = 0V,VCE = VCES 5 mA IGES GatetoEmitter Leakage Current V GE = ±30V,VCE = 0V 4 00 nA VGE(th) GateThreshold Voltage IC =1m A, VCE = V GE 4.5 5.7 V VCE(sat) Col lector to Emitter Saturation Voltage(ModuleLevel) IC =200A, VGE = 15V TJ =25°C 2.3 0 2.50 V TJ =125°C 2.7 0 Switching Characteristicsof IGBT td(on) Turn-onDelayTime VCC =600V IC =200A RG =4.7Ω VGE= ±15V Inductive Load TJ =25°C 80 ns TJ = 125°C 85 tr Tu rn-onRiseTime TJ =25°C 75 ns TJ =125°C 80 td(off) Turn-offDelayTime TJ =25°C 550 ns TJ =125°C 620 tf Turn-off FallTime TJ =25°C 100 ns TJ =125°C 120 Eo n Turn-onSwitchingLoss TJ =25°C 7.0 mJ TJ =125°C 9.5 Eoff Turn-offSwitchingLoss TJ =25°C 8.5 mJ TJ =125°C 12.0 Qg TotalGateCharge TJ =25°C 1500 nC Rgint Integratedgateresistor f = 1 M; Vpp= 1V TJ =25°C 2.5 Ω Cies InputCapacitance VCE =25V VGE= 0V f= 1MHz TJ =25°C 15.5 nFCoes OutputCapacitance TJ =25°C 2.1 Cres Rev erseTransfer Cap acitance TJ =25°C 1.2 RθJC ThermalResistance,Junction-to-Case (IGBT) 0.150 °C/W GPU200HF120D2SE 1200V/200A 2 in one-package http://www.lgesemi.com Revision:20241125-P2 mail:lge@lgesemi.com
Electrical and Switching Characteristics of Freewheeling Diode VF DiodeForward Voltage IF = 20 0A, VGE = 0V TJ =25°C 1.90 2.20 V TJ =125°C 1.90 trr Diod eReverseRecovery Time IF = 200A, di/dt=2600A/µs, Vrr= 600V, TJ =25°C 160 ns TJ = 125°C 220 Irr Di od ePeakReverse RecoveryCurrent TJ =25°C 170 A TJ =125°C 210 Qrr Diod eReverseRecovery Cha rge TJ =25°C 16.5 uC TJ =125°C 26.5 Err Diod eReverseRecovery Energy TJ =25°C 5.50 mJ TJ =125°C 10.5 RθJC ThermalResistance, Junction-to-Case(Diode) 0.157 °C/W Module Characteristics Parameter Min. Typ. Max. Unit Viso IsolationVoltage (AllTerminalsShorted),f =50Hz,1minute 2500 V Rθ CS Case-To-Sink(ConductiveGreaseApplied) 0.1 °C/W M Power TerminalsScrew: M6 3.0 5.0 N· m M MountingScrew: M6 4.0 6.0 N·m G Weig ht 315 g GPU200HF120D2SE 1200V/200A 2 in one-package http://www.lgesemi.com Revision:20241125-P3 mail:lge@lgesemi.com
Fig1.outputcharacteristicIGBT ， IC=f(VCE),VGE=15V Fig2.output characteristic IGBT， IC=f(VCE),Tj=125℃ Fig3. transfercharacteristicIGBT ， IC=f(VG E),VCE=20V Fig4.switching lossesIGBT, Eon=f(Ic),Eoff=f(Ic), VG E=±15V,RGon=4.7Ω,RGoff=4.7Ω,VCE=600V GPU200HF120D2SE 1200V/200A 2 in one-package http://www.lgesemi.com Revision:20241125-P4 mail:lge@lgesemi.com
Fig5. switchinglossesIGBT, Eon=f(RG),Eoff=f(RG), VGE= ±15V,IC=200A,VCE=600V Fig6.transient thermalimpedanceIGBT , Zthjc=f(t) Fig7.reversebiassafeoperatingareaIGBT, IC=f (VCE),VGE=±15V,RGoff=4.7Ω，Tj=125℃ Fig8.forward characteristicof Diode ， IF=f(VF) i： 1 2 3 4 ri（K/W）： 0.01005 0.05926 0.1363 0.08096 τi（s）： 0.0 00285 0.004346 0.04931 0.7947 GPU200HF120D2SE 1200V/200A 2 in one-package http://www.lgesemi.com Revision:20241125-P5 mail:lge@lgesemi.com
Fig9.switchinglossesDiode, Err=f(IF),,RGon=4.7Ω,VCE=600V Fig10. switchinglossesDiode, Err=f(RG),IF=200A,VCE=600V GPU200HF120D2SE 1200V/200A 2 in one-package http://www.lgesemi.com Revision:20241125-P6 mail:lge@lgesemi.com
Internal Circuit: Package Dimension Dimensions in Millimeters GPU200HF120D2SE 1200V/200A 2 in one-package http://www.lgesemi.com Revision:20241125-P7 mail:lge@lgesemi.com