GPU100HF120D1SE LUGUANG | Alldatasheet

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1200V/100A 2 in one-package Features：  1200V100A,VCE(sat)(typ)=2.30V  SPT（Soft Punch Through）technology  Lower losses  Higher system efficiency  Excellent short-circuit capability  Square RBSOA General Applications： Daxin’s IGBTs offer ultrafast switching speed for application such as welding, inductive heating, UPS and other high frequency applications Absolute Maximum Ratings of IGBT VCES Collector to Emitter Voltage 1200 V VGES Continuous Gate to Emitter Voltage ±30 V IC Continuous Collector Current TC = 25°C 200 A TC = 100°C 100 ICM Pulse Collector Current TJ = 150°C 200 A PD Maximum Power Dissipation (IGBT) TC = 25° C, TJ = 150°C 400 W tsc Short Circuit Withstand Time > 10 µs TJ Maximum IGBT Junction Temperature 150 °C TJOP Maximum Operating Junction Temperature Range -40 to +150 °C Tstg Storage Temperature Range -40 to +125 °C Absolute Maximum Ratings of Freewheeling Diode VRRM Repetitive Peak Reverse Voltage Preliminary Data 1200 V IF Diode Continuous Forward Current TC = 25°C 200 A Diode Continuous Forward Current TC = 100°C 100 IFM Diode Maximum Forward Current 200 A Equivalent Circuit Schematic http://www.lgesemi.com Revision:20241125-P1 mail:lge@lgesemi.com

Electrical Characteristics of IGBT at TJ = 25° C (Unless Otherwise Specified) Parameter Test Conditions Min Typ Max Unit BVCES Collector to Emitter Breakdown Voltage VGE = 0V, IC = 1mA 1200 V ICES Collector to Emitter Leakage Current VGE = 0V,VCE = VCES 1 mA IGES Gate to Emitter Leakage Current VGE = ±30V, VCE = 0V 200 nA VGE(th) Gate Threshold Voltage IC = 1mA, VCE = VGE 4.5 5.7 V VCE(sat) Collector to Emitter Saturation Voltage (Module Level) IC = 100A, VGE = 15V TJ = 25°C 2.30 2.50 V TJ = 125°C 2.70 Switching Characteristics of IGBT td(on) Turn-on Delay Time VCC = 600V IC = 100A RG = 5.6Ω VGE = ± 15V Inductive Load TJ = 25°C 25 ns TJ = 125°C 30 tr Turn-on Rise Time TJ = 25°C 50 ns TJ = 125°C 55 td(off) Turn-off Delay Time TJ = 25°C 290 ns TJ = 125°C 300 tf Turn-off Fall Time TJ = 25°C 90 ns TJ = 125°C 150 Eon Turn-on Switching Loss TJ = 25°C 4.50 mJ TJ = 125°C 5.20 Eoff Turn-off Switching Loss TJ = 25°C 2.30 mJ TJ = 125°C 4.50 Qg Total Gate Charge TJ = 25°C 780 nC Rgint Integrated gate resistor f = 1M; Vpp = 1V TJ = 25°C 2.5 Ω Cies Input Capacitance VCE = 25V VGE = 0V f = 1MHz TJ = 25°C 7.20 nF Coes Output Capacitance TJ = 25°C 1.10 Cres Reverse Transfer Capacitance TJ = 25°C 0.63 RθJC Thermal Resistance, Junction-to-Case (IGBT) 0.31 °C/W GPU100HF120D1SE 1200V/100A 2 in one-package http://www.lgesemi.com Revision:20241125-P2 mail:lge@lgesemi.com

Electrical and Switching Characteristics of Freewheeling Diode VF Diode Forward Voltage IF = 100A , VGE = 0V TJ = 25°C 1.90 2.20 V TJ = 125°C 1.90 trr Diode Reverse Recovery Time IF = 100A, di/dt=650A/μs, Vrr = 600V, TJ = 25°C 250 ns TJ = 125°C 390 Irr Diode Peak Reverse Recovery Current TJ = 25°C 75 A TJ = 125°C 80 Qrr Diode Reverse Recovery Charge TJ = 25°C 8.50 nC TJ = 125°C 13.50 Err Diode Reverse Recovery Energy TJ = 25°C 2.30 mJ TJ = 125°C 3.80 RθJC Thermal Resistance, Junction-to-Case (Diode) 0.46 °C/W Module Characteristics Parameter Min. Typ. Max. Unit Viso Isolation Voltage (All Terminals Shorted),f = 50Hz, 1minute 2500 V RθCS Case-To-Sink(Conductive Grease Applied) 0.1 °C/W M Power Terminals Screw: M5 3.0 5.0 N· m M Mounting Screw: M6 4.0 6.0 N· m G Weight 160 g GPU100HF120D1SE 1200V/100A 2 in one-package http://www.lgesemi.com Revision:20241125-P3 mail:lge@lgesemi.com

Fig 1. output characteristic IGBT， IC=f(VCE),VGE=15V Fig 2. output characteristic IGBT， IC=f(VCE),Tj=125℃ Fig 3. transfer characteristic IGBT， IC=f(VGE),VCE=20V Fig 4. switching losses IGBT, Eon=f(Ic),Eoff=f(Ic), VGE=± 15V,RGon=5.6Ω,RGoff=5.6Ω,VCE=600V GPU100HF120D1SE 1200V/100A 2 in one-package http://www.lgesemi.com Revision:20241125-P4 mail:lge@lgesemi.com

Fig 5. switching losses IGBT, Eon=f(RG),Eoff=f(RG), VGE=± 15V,IC=100A,VCE=600V Fig 6. transient thermal impedance IGBT , Zthjc=f(t) Fig 7. reverse bias safe operating area IGBT, IC=f(VCE), VGE=± 15V,RGoff=5.6Ω，Tvj=125℃ Fig 8. forward characteristic of Diode ，IF=f(VF) GPU100HF120D1SE 1200V/100A 2 in one-package http://www.lgesemi.com Revision:20241125-P5 mail:lge@lgesemi.com

Fig 9. switching losses Diode, Err=f(IF),,RGon=7.5Ω,VCE=600V Fig 10. switching losses Diode, Err=f(RG),IF=100A,VCE=600V GPU100HF120D1SE 1200V/100A 2 in one-package http://www.lgesemi.com Revision:20241125-P6 mail:lge@lgesemi.com

Internal Circuit: Package Dimension Dimensions in Millimeters GPU100HF120D1SE 1200V/100A 2 in one-package http://www.lgesemi.com Revision:20241125-P7 mail:lge@lgesemi.com