GPT13N50 GREATPOWER | Alldatasheet

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POWER F IELD E FFECT T RANSISTOR 2013/6/26 Rev1.4 Greatpower Microelectronic Corp. Page 1 GENERAL DESCRIPTION

FEATURES

This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy efficient design also offers a drain-to-source diode with a fast recovery time. Designed for high voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional and safety margin against unexpected voltage transients. /rhombus6 Robust High Voltage Termination /rhombus6 Avalanche Energy Specified /rhombus6 Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode /rhombus6 Diode is Characterized for Use in Bridge Circuits /rhombus6 I DSS and V DS (on) Specified at Elevated Temperature /rhombus6 Ciss improvement PIN CONFIGURATION SYMBOL TO220/TO-220F Top View 1 2 3 GATE DRAIN SOURCE N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS Rating Symbol Value Unit Drain to Current － Continuous － Pulsed ID IDM A Gate-to-Source Voltage － Continue VGS ±30 V Total Power Dissipation – TO220 – TO220FP Derate above 25 ℃ – TO220 – TO220FP P D 193 1.54 0.38 W W/ ℃ Operating and Storage Temperature Range TJ, T STG -55 to 150 ℃ Single Pulse Drain-to-Source Avalanche Energy － T J = 25 ℃ (V DD = 100V, V GS = 10V, I L = 11A, L = 10mH, R G = 25Ω) EAS 605 mJ Thermal Resistance － Junction to Case -TO220 － Junction to Case -TO220FP － Junction to Ambient -TO220, TO220FP θJC θJA 0.64 3.7 62.5 ℃/W Maximum Lead Temperature for Soldering Purposes, 1/8” from case for 10 seconds TL 260 ℃ ESD SENSITIVITY － HBM, C=100pF, R=1.5kΩ Vesd 2000 V D S G

POWER F IELD E FFECT T RANSISTOR 2013/6/26 Rev1.4 Greatpower Microelectronic Corp. Page 2

ORDERING INFORMATION

GPT13N50GN220* TO-220 GPT13N50DGN220FP* TO-220F *Note: G : Suffix for PB Free Product

ELECTRICAL CHARACTERISTICS

Unless otherwise specified, T J = 25 ℃. GPT13N50 Characteristic Symbol Min Typ Max Units Drain-Source Breakdown Voltage GS = 0 V, I D = 250 μA) V(BR)DSS 500 V Drain-Source Leakage Current (V DS = 500 V, V GS = 0 V) IDSS 1 µA Gate-Source Leakage Current-Forward gsf = 30 V, V DS = 0 V) IGSSF 100 nA Gate-Source Leakage Current-Reverse gsr = -30 V, V DS = 0 V) IGSSR 100 nA Gate Threshold Voltage DS = V GS , I D = 250 μA) VGS(th) 3 5 V Static Drain-Source On-Resistance (V GS = 10 V, I D = 6.5A) * R DS(on) 0.49 Ω Forward Transconductance (V DS = 15 V, I D = 6.5A) * g FS 8.7 S Input Capacitance C iss 1578 pF Output Capacitance C oss 180 pF Reverse Transfer Capacitance (V DS = 25 V, V GS = 0 V, f = 1.0 MHz) C rss 9.8 pF Turn-On Delay Time td(on) 33 ns Rise Time tr 59 ns Turn-Off Delay Time td(off) 75 ns Fall Time (V DD = 250 V, I D = 13 A, RG = 25Ω) * tf 34.8 ns Total Gate Charge Qg 31 nC Gate-Source Charge Qgs 8.7 nC Gate-Drain Charge (V DS = 400 V, I D = 13 A, VGS = 10 V)* Qgd 12 nC SOURCE-DRAIN DIODE CHARACTERISTICS Forward On-Voltage(1) VSD 1.5 V Forward Turn-On Time ton ** ns Reverse Recovery Time (I S =13 A, V GS = 0 V, dIS /d t = 100A/µs) trr 450 ns * Pulse Test: Pulse Width ≦300µs, Duty Cycle ≦2% ** Negligible, Dominated by circuit inductance

POWER F IELD E FFECT T RANSISTOR 2013/6/26 Rev1.4 Greatpower Microelectronic Corp. Page 3 TYPICAL ELECTRICAL CHARACTERISTICS 0.4 0.8 1.2 1.6 2.4 2.8 3.2 -50 -40 -25 0 25 50 75 100 125 150 Operation Temperature (C) Rdson (Normalized) 0.8 1.2 -50 -25 0 25 50 75 100 125 150 Operation Temperature (C) BVD (Norm alized) Fig 1. On-Resistance Variation with vs. Fig.2 Breakdown Voltage Variation vs. Temperature Temperature 0.1 100 0.1 1 10 100 VDS , Drain-to-Source Voltage [V] ID , D rain -to -So u rce cu rren t [A ] 10V 6.5V 5.5V 20us PULSE WIDTH T J=25C 25C 25C 25C 25C 150C 150C 150C 150C Fig 3. Typical Output Characteristics Fig 5. Typical Transfer Characteristics

POWER F IELD E FFECT T RANSISTOR 2013/6/26 Rev1.4 Greatpower Microelectronic Corp. Page 4 Fig 6. Typical Capacitance Vs. Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Drain-to-Source Voltage

POWER F IELD E FFECT T RANSISTOR 2013/6/26 Rev1.4 Greatpower Microelectronic Corp. Page 5 PACKAGE DIMENSION TO-220 TO-220F

POWER F IELD E FFECT T RANSISTOR 2013/6/26 Rev1.4 Greatpower Microelectronic Corp. Page 6 IMPORTANT NOTICE Great Power Microelectronic Corporation (GP) reserves the right to make changes to its products or to discontinue any integrated circuit product or service without notice, and advises its customers to obtain the latest version of relevant information to verify, before placing orders, that the information being relied on is current. A few applications using integrated circuit products may involve potential risks of death, personal injury, or severe property or environmental damage. GP integrated circuit products are not designed, intended, authorized, or warranted to be suitable for use in life-support applications, devices or systems or other critical applications. Use of GP products in such applications is understood to be fully at the risk of the customer. In order to minimize risks associated with the customer’s applications, the customer should provide adequate design and operating safeguards. 虹冠電子工業股份有限公司 深圳市冠顺微电子股份有限公司 Champion Microelectronic Corporation Shenzhen Great Power Co.,Ltd Web:http://www.champion-micro.com/ Web:http:// www.grtpower.com 臺灣 深圳 新北市汐止區新台五路一段 96 號 21F 21F., No. 96, Sec. 1, Sintai 5th Rd., Sijhih City, Taipei County 22102, Taiwan, R.O.C. 深圳市福田区深南大道 7002 号财富广场A 座 4V, 4V, Tower A, Fortune Plaza, No. 7002, Shennan Road, Futian District, Shenzhen City, China PC : 518040 T E L : +886-2-2696 3558 T E L : +86-755-83709176 F A X : +886-2-2696 3559 F A X : +86-755-83709276