GPK50PI120D6T4 LUGUANG | Alldatasheet

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http://www.lgesem i.com mail:lge@lgesemi.comRevision:20240201-P1 GPK50PI120D6T4 1200V/50A PIM Features： ⚫ 1200V 50A,VCE(sat)(typ.)=2.10V ⚫ Lower losses and higher energy ⚫ Excellent short circuit ruggedness ⚫ 62mm PIM module General Applications LGE’s IGBTs offer lower losses and higher energy for application such as motor drive , inverter and other soft switching applications. IGBT,Inverter Absolute Maximum Ratings of IGBT VCES Collector to Emitter Voltage 1200 V VGES Continuous Gate to Emitter Voltage ±30 V IC Continuous Collector Current TC = 25°C 100 A TC = 100°C 50 ICM Pulse Collector Current TJ = 150°C 100 A PD Maximum Power Dissipation (IGBT) TC = 25°C, TJ = 150°C 365 W tsc Short Circuit Withstand Time > 10 µs TJ Maximum IGBT Junction Temperature 150 °C TJOP Maximum Operating Junction Temperature Range -40 to +150 °C Tstg Storage Temperature Range -40 to +125 °C Absolute Maximum Ratings of Freewheeling Diode VRRM Repetitive Peak Reverse Voltage Preliminary Data 1200 V IF Diode Continuous Forward Current TC = 25°C 100 A Diode Continuous Forward Current TC = 100°C 50 IFM Diode Maximum Forward Current 100 A Equivalent Circuit Schematic

http://www.lgesem i.com mail:lge@lgesemi.comRevision:20240201-P2 GPK50PI120D6T4 Parameter Test Conditions Min Typ Max Unit Electrical Characteristics of IGBT at TJ = 25°C (Unless Otherwise Specified) BVCES Collector to Emitter Breakdown Voltage VGE = 0V, IC = 1mA 1200 V ICES Collector to Emitter Leakage Current VGE = 0V,VCE = VCES 1 mA IGES Gate to Emitter Leakage Current VGE = ±30V, VCE = 0V 100 nA VGE(th) Gate Threshold Voltage IC = 1mA, VCE = VGE 4.5 5.7 V VCE(sat) Collector to Emitter Saturation Voltage (Module Level) IC = 50A, VGE = 15V TJ = 25°C 2.10 2.30 V TJ = 125°C 2.50 Switching Characteristics of IGBT td(on) Turn-on Delay Time VCC = 600V IC = 50A RG = 10Ω VGE = ±15V Inductive Load TJ = 25°C 20 ns tr Turn-on Rise Time TJ = 25°C 35 ns td(off) Turn-off Delay Time TJ = 25°C 250 ns tf Turn-off Fall Time TJ = 25°C 330 ns Eon Turn-on Switching Loss TJ = 25°C 3.90 mJ Eoff Turn-off Switching Loss TJ = 25°C 2.20 mJ Qg Total Gate Charge TJ = 25°C 430 nC Rgint Integrated gate resistor f = 1M; Vpp = 1V TJ = 25°C 2.2 Ω Cies Input Capacitance VCE = 25V VGE = 0V f = 1MHz TJ = 25°C 3.80 nF Coes Output Capacitance TJ = 25°C 0.51 Cres Reverse Transfer Capacitance TJ = 25°C 0.33 RθJC Thermal Resistance, Junction-to-Case (IGBT) 0.343 °C/W Electrical and Switching Characteristics of Freewheeling Diode VF Diode Forward Voltage IF = 50A , VGE = 0V TJ = 25°C 1.90 2.20 V TJ = 125°C 1.90 trr Diode Reverse Recovery Time IF = 50A, di/dt = 890A/μs, Vrr = 600V, TJ = 25°C 110 ns Irr Diode Peak Reverse Recovery Current TJ = 25°C 55 A Qrr Diode Reverse Recovery Charge TJ = 25°C 3.00 uC Err Diode Reverse Recovery Energy TJ = 25°C 0.8 mJ RθJC Thermal Resistance, Junction-to-Case (Diode) 0.652 °C/W

http://www.lgesem i.com mail:lge@lgesemi.comRevision:20240201-P3 GPK50PI120D6T4 Diode, Rectifier Maximum Rated Values VRRM Repetitive Peak Reverse Voltage TJ = 25°C 1800 V IFRMSM Maximum RMS forward current per chip TC =80℃ 50 A IRMSM Maximum RMS current at rectifier output TC =80℃ 100 IFSM Surge Current @tp=10 ms TJ =25℃ 420 A I2t I²t - value TJ =25℃ 880 A2s Electrical Characteristics of Diode Parameter Test Conditions Min Typ Max Unit VF Diode Forward Voltage IF = 50A TJ = 25°C 1.05 V TJ = 125°C 0.85 IR Reverse current TJ = 125°C 1.0 mA RθJC Thermal Resistance, Junction-to-Case (Diode) 0.85 °C/W

http://www.lgesem i.com mail:lge@lgesemi.comRevision:20240201-P4 GPK50PI120D6T4 IGBT,Brake-Chopper Maximum Ratings of IGBT VCES Collector to Emitter Voltage 1200 V VGES Continuous Gate to Emitter Voltage ±30 V IC Continuous Collector Current TC = 25°C 50 A TC = 100°C 25 ICM Pulse Collector Current TJ = 150°C 50 A PD Maximum Power Dissipation (IGBT) TC = 25°C, TJ = 150°C 280 W tsc Short Circuit Withstand Time > 10 µs TJ Maximum IGBT Junction Temperature 150 °C TJOP Maximum Operating Junction Temperature Range -40 to +150 °C Tstg Storage Temperature Range -40 to +125 °C Electrical Characteristics of IGBT at TJ = 25°C (Unless Otherwise Specified) Parameter Test Conditions Min Typ Max Unit BVCES Collector to Emitter Breakdown Voltage VGE = 0V, IC = 1mA 1200 V ICES Collector to Emitter Leakage Current VGE = 0V, VCE=VCES 1 mA IGES Gate to Emitter Leakage Current VGE = ±30V, VCE = 0V 100 nA VGE(th) Gate Threshold Voltage IC = 1mA, VCE = VGE 4.5 5.7 V VCE(sat) Collector to Emitter Saturation Voltage (Module Level) IC = 25A, VGE = 15V TJ = 25°C 2.10 2.30 V TJ = 125°C 2.50 Switching Characteristics of IGBT td(on) Turn-on Delay Time VCC = 600V IC = 25A RG = 13Ω VGE = ±15V Inductive Load TJ = 25°C 20 ns tr Turn-on Rise Time TJ = 25°C 40 ns td(off) Turn-off Delay Time TJ = 25°C 280 ns tf Turn-off Fall Time TJ = 25°C 210 ns Eon Turn-on Switching Loss TJ = 25°C 1.80 mJ Eoff Turn-off Switching Loss TJ = 25°C 1.70 mJ Qg Total Gate Charge TJ = 25°C 140 nC Rgint Integrated gate resistor f = 1M; Vpp = 1V TJ = 25°C 8.0 Ω Cies Input Capacitance VCE = 25V VGE = 0V f = 1MHz TJ = 25°C 1.08 nF Coes Output Capacitance TJ = 25°C 0.17 Cres Reverse Transfer Capacitance TJ = 25°C 0.12 RθJC Thermal Resistance, Junction-to-Case (IGBT) 0.45 °C/W

http://www.lgesem i.com mail:lge@lgesemi.comRevision:20240201-P5 GPK50PI120D6T4 Diode,Brake-Chopper Maximum Rated Values VRRM Repetitive Peak Reverse Voltage Preliminary Data 1200 V IF Diode Continuous Forward Current TC = 25°C 50 A TC = 100°C 25 IFM Diode Maximum Forward Current 50 A Electrical and Switching Characteristics of Freewheeling Diode Parameter Test Conditions Min Typ Max Unit VF Diode Forward Voltage IF = 25A , VGE = 0V TJ = 25°C 1.90 2.20 V TJ = 125°C 1.90 trr Diode Reverse Recovery Time IF = 25A, di/dt = 1200A/μs, Vrr = 600V TJ = 25°C 120 ns Irr Diode Peak Reverse Recovery Current TJ = 25°C 17 A Qrr Diode Reverse Recovery Charge TJ = 25°C 1.30 uC RθJC Thermal Resistance, Junction-to-Case (Diode) 1.31 °C/W NTC - Thermistor Characteristic Values R25 TC = 25°C 5 KΩ P25 TC = 25°C 50 mW B25/50 R2 =R25exp[B25/50(1/T2-1/(298.15K)] 3375 K B25/80 R2 =R25exp[B25/80(1/T2-1/(298.15K)] 3410 K Module Characteristics Parameter Min. Typ. Max. Unit Viso Isolation Voltage (All Terminals Shorted),f = 50Hz, 1minute 2500 V RθCS Case-To-Sink(Conductive Grease Applied) 0.1 °C/W M Mounting Screw: M5 3.0 6.0 N·m G Weight 300 g

http://www.lgesem i.com mail:lge@lgesemi.comRevision:20240201-P6 GPK50PI120D6T4 Fig 1. Output characteristic IGBT， IC=f(VCE),VGE=15V Fig 2. Output characteristic IGBT， IC=f(VCE),Tj=125℃ Fig 3. Transfer characteristic IGBT IC=f(VGE),VCE=20V Fig 4. Switching losses IGBT, Eon=f(Ic),Eoff=f(Ic), VGE=±15V,RGon=18Ω,RGoff=18Ω,VCE=600V 100 VCE (V) Tj=25℃ Tj=125℃ IC (A) 100 VCE (V) VGE=9V VGE=11V VGE=13V VGE=15V VGE=17V VGE=19V IC (A) 0 20 40 60 80 100 E (mJ) IC (A) Eon, … Eoff, … 100 5 6 7 8 9 10 11 Tj=25℃ Tj=125℃ VGE (V) IC (A)

http://www.lgesem i.com mail:lge@lgesemi.comRevision:20240201-P7 GPK50PI120D6T4 Fig 5. Switching losses IGBT, Eon=f(RG),Eoff=f(RG), VGE=±15V,IC=50A,VCE=600V Fig 6. Transient thermal impedance IGBT , Zthjc=f(t) Fig 7.Rreverse bias safe operating area IGBT, IC=f(VCE),VGE=±15V,RGoff=18Ω，Tvj=125℃ Fig 8. Forward characteristic of Diode ， IF=f(VF) 10 20 30 40 50 E (mJ) Rg (Ω) Eon, Tj=125℃ Eoff, Tj=125℃ 0.001 0.01 0.1 0.001 0.01 0.1 1 10 Zthjc（K/W） t (s) Z thJC : IGBT 120 150 300 600 900 1200 1500 IC (A) VCE (V) IC-Chip IC-Modul 100 Tj=25℃ Tj=125℃ VF (V) IF (A)

http://www.lgesem i.com mail:lge@lgesemi.comRevision:20240201-P8 GPK50PI120D6T4 Fig 9. Switching losses Diode, Err=f(IF),,RGon=18Ω,VCE=600V Fig 10. Switching losses Diode, Err=f(RG),IF=50A,VCE=600V 0 20 40 60 80 100 Err（mJ） IF (A) Err, Tj=125℃ 0 10 20 30 40 50 Err（mJ） Rg (Ω) Err, Tj=125℃ 0 30 60 90 120 150 T（℃） R（KΩ） Fig 11.NTC-Thermistor-temperature characteristic(typical)

http://www.lgesem i.com mail:lge@lgesemi.comRevision:20240201-P9 GPK50PI120D6T4 Internal Circuit: Package Dimension Dimensions in Millimeters X X 2:1 2:1 Y Y