GPK100PI120D6T4 LUGUANG | Alldatasheet

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http://www.lgesem i.com mail:lge@lgesemi.comRevision:20240201-P1 GPK100PI120D6T4 1200V/100A PIM ：Features 1200V100A,VCE(sat)(typ.)=2.10V Lower losses and higher energy Excellent short circuit ruggedness 62mm half bridge moduleGeneral Applications： LGE’s IGBTs offer lower losses and higher energy for application such as motor drive ,inverter and other soft switching applications. IGBT,Inverter Maximum Ratings of IGBT VCES Collector to Emitter Voltage 1200 V VGES Continuous Gate to Emitter Voltage ± 30 V IC Continuous Collector Current TC = 25°C 200 A TC = 100°C 100 ICM Pulse Collector Current TJ = 150°C 200 A PD Maximum Power Dissipation (IGBT) TC = 25°C, TJ = 150°C 670 W tsc Short Circuit Withstand Time > 10 µs TJ Maximum IGBT Junction Temperature 150 °C TJOP Maximum Operating Junction Temperature Range -40 to +150 °C Tstg Storage Temperature Range -40 to +125 °C Absolute Maximum Ratings of Freewheeling Diode VRRM Repetitive Peak Reverse Voltage Preliminary Data 1200 V IF Diode Continuous Forward Current TC = 25°C 200 A TC = 100°C 100 IFM Diode Maximum Forward Current 200 A Equivalent Circuit Schemati c

http://www.lgesem i.com mail:lge@lgesemi.comRevision:20240201-P2 GPK100PI120D6T4 Electrical Characteristics of IGBT at TJ = 25°C (Unless Otherwise Specified) Parameter Test Conditions Min Typ Max Unit BVCES Collector to Emitter Breakdown Voltage VGE = 0V, IC = 1mA 1200 V ICES Collector to Emitter Leakage Current VGE = 0V,VCE = VCES 1 mA IGES Gate to Emitter Leakage Current VGE = ±30V, VCE = 0V 200 nA VGE(th) Gate Threshold Voltage IC = 1mA, VCE = VGE 4.5 5.5 V VCE(sat) Collector to Emitter Saturation Voltage (Module Level) IC = 100A, VGE = 15V TJ = 25°C 2.10 2.30 V TJ = 125°C 2.50 Switching Characteristics of IGBT td(on) Turn-on Delay Time VCC = 600V IC = 100A RG = 5.6Ω VGE = ±15V Inductive Load TJ = 25°C 90 ns TJ = 125°C 100 tr Turn-on Rise Time TJ = 25°C 60 ns TJ = 125°C 65 td(off) Turn-off Delay Time TJ = 25°C 460 ns TJ = 125°C 470 tf Turn-off Fall Time TJ = 25°C 220 ns TJ = 125°C 300 Eon Turn-on Switching Loss TJ = 25°C 5.3 mJ TJ = 125°C 5.8 Eoff Turn-off Switching Loss TJ = 25°C 7.1 mJ TJ = 125°C 9.0 Qg Total Gate Charge TJ = 25°C 1000 nC Rgint Integrated gate resistor f = 1M; Vpp = 1V TJ = 25°C 1.9 Ω Cies Input Capacitance VCE = 25V VGE = 0V f = 1MHz TJ = 25°C 8.00 nF Coes Output Capacitance TJ = 25°C 1.35 Cres Reverse Transfer Capacitance TJ = 25°C 0.81 RθJC Thermal Resistance, Junction-to-Case (IGBT) 0.186 °C/W

http://www.lgesem i.com mail:lge@lgesemi.comRevision:20240201-P3 GPK100PI120D6T4 Electrical and Switching Characteristics of Freewheeling Diode VF Diode Forward Voltage IF = 100A , VGE = 0V TJ = 25°C 1.90 2.20 V TJ = 125°C 1.90 trr Diode Reverse Recovery Time IF = 100A, di/dt=1500A/µs, Vrr = 600V, TJ = 25°C 120 ns TJ = 125°C 145 Irr Diode Peak Reverse Recovery Current TJ = 25°C 90 A TJ = 125°C 110 Qrr Diode Reverse Recovery Charge TJ = 25°C 6.5 uC TJ = 125°C 8.7 Err Diode Reverse Recovery Energy TJ = 25°C 1.8 mJ TJ = 125°C 2.5 RθJC Thermal Resistance, Junction-to-Case (Diode) 0.301 °C/W Diode, Rectifier Maximum Rated Values VRRM Repetitive Peak Reverse Voltage TJ = 25°C 1800 V IFRMSM Maximum RMS forward current per chip TC =80 100 A IRMSM Maximum RMS current at rectifier output TC =80 200 IFSM Surge Current @tp=10 ms TJ =25 1080 A I2t ²I t - value TJ =25

5832 A2s

Electrical Characteristics of Diode VF Diode Forward Voltage IF = 100A TJ = 25°C 1.05 V TJ = 125°C 0.85 IR Reverse current TJ = 125°C 1.0 mA RθJC Thermal Resistance, Junction-to-Case (Diode) 0.40 °C/W

http://www.lgesem i.com mail:lge@lgesemi.comRevision:20240201-P4 GPK100PI120D6T4 IGBT,Brake-Chopper Maximum Ratings of IGBT VCES Collector to Emitter Voltage 1200 V VGES Continuous Gate to Emitter Voltage ± 30 V IC Continuous Collector Current TC = 25°C 100 A TC = 100°C 50 ICM Pulse Collector Current TJ = 150°C 100 A PD Maximum Power Dissipation (IGBT) TC = 25°C, TJ = 150°C 365 W tsc Short Circuit Withstand Time > 10 µs TJ Maximum IGBT Junction Temperature 150 °C TJOP Maximum Operating Junction Temperature Range -40 to +150 °C Tstg Storage Temperature Range -40 to +125 °C Electrical Characteristics of IGBT at TJ = 25°C (Unless Otherwise Specified) Parameter Test Conditions Min Typ Max Unit BVCES Collector to Emitter Breakdown Voltage VGE = 0V, IC = 1mA 1200 V ICES Collector to Emitter Leakage Current VGE = 0V,VCE = VCES 1 mA IGES Gate to Emitter Leakage Current VGE = ±30V, VCE = 0V 200 nA VGE(th) Gate Threshold Voltage IC = 1mA, VCE = VGE 4.5 5.7 V VCE(sat) Collector to Emitter Saturation Voltage (Module Level) IC = 50A, VGE = 15V TJ = 25°C 2.10 2.30 V TJ = 125°C 2.50 Switching Characteristics of IGBT td(on) Turn-on Delay Time VCC = 600V IC = 50A RG = 13Ω VGE = ±15V Inductive Load TJ = 25°C 20 ns TJ = 125°C 25 tr Turn-on Rise Time TJ = 25°C 40 ns TJ = 125°C 45 td(off) Turn-off Delay Time TJ = 25°C 300 ns TJ = 125°C 330 tf Turn-off Fall Time TJ = 25°C 160 ns TJ = 125°C 180

http://www.lgesem i.com mail:lge@lgesemi.comRevision:20240201-P5 GPK100PI120D6T4 Eon Turn-on Switching Loss VCC = 600V IC = 50A RG = 13Ω VGE = ±15V Inductive Load TJ = 25°C 4.50 mJ TJ = 125°C 6.50 Eoff Turn-off Switching Loss TJ = 25°C 4.20 mJ TJ = 125°C 6.10 Qg Total Gate Charge TJ = 25°C 430 nC Rgint Integrated gate resistor f = 1M; Vpp = 1V TJ = 25°C 2.2 Ω Cies Input Capacitance VCE = 25V VGE = 0V f = 1MHz TJ = 25°C 3.80 nF Coes Output Capacitance TJ = 25°C 0.51 Cres Reverse Transfer Capacitance TJ = 25°C 0.33 RθJC Thermal Resistance, Junction-to-Case (IGBT) 0.343 °C/W Diode,Brake-Chopper Maximum Rated Values VRRM Repetitive Peak Reverse Voltage Preliminary Data 1200 V IF Diode Continuous Forward Current TC = 25°C 100 A TC = 100°C 50 IFM Diode Maximum Forward Current 100 A Electrical and Switching Characteristics of Freewheeling Diode VF Diode Forward Voltage IF = 50A , VGE = 0V TJ = 25°C 1.90 2.20 V TJ = 125°C 1.90 trr Diode Reverse Recovery Time IF = 50A, di/dt = 1200A/µs, Vrr = 600V, TJ = 25°C 110 ns TJ = 125°C 250 Irr Diode Peak Reverse Recovery Current TJ = 25°C 85 A TJ = 125°C 100 Qrr Diode Reverse Recovery Charge TJ = 25°C 5.5 uC TJ = 125°C 9.50 Err Diode Reverse Recovery Energy TJ = 25°C 1.80 mJ TJ = 125°C 3.70

http://www.lgesem i.com mail:lge@lgesemi.comRevision:20240201-P6 GPK100PI120D6T4 RθJC Thermal Resistance, Junction-to-Case (Diode) 0.652 °C/W NTC - Thermistor Characteristic Values R25 TC = 25°C 5 KΩ △ R/R TC = 100°C,R100=493Ω 5 % P25 TC = 25°C 50 mW B25/50 R2 =R25exp[B25/50(1/T2-1/(298.15K)] 3375 K B25/80 R2 =R25exp[B25/80(1/T2-1/(298.15K)] 3410 K Module Characteristics Parameter Min. Typ. Max. Unit Viso Isolation Voltage (All Terminals Shorted),f = 50Hz, 1minute 2500 V RθCS Case-To-Sink(Conductive Grease Applied) 0.1 °C/W M Mounting Screw: M5 3.0 6.0 N·m G Weight 300 g

http://www.lgesem i.com mail:lge@lgesemi.comRevision:20240201-P7 GPK100PI120D6T4 Fig 1. output characteristic IGBT， IC=f(VCE),VGE=15V Fig 2. output characteristic IGBT， ℃IC=f(VCE),Tj=125 Fig 3. transfer characteristic IGBT， IC=f(VGE),VCE=20V Fig 4. switching losses IGBT, Eon=f(Ic),Eoff=f(Ic), VGE=±15V,RGon=5.6Ω,RGoff=5.6Ω,VCE=600V

http://www.lgesem i.com mail:lge@lgesemi.comRevision:20240201-P8 GPK100PI120D6T4 Fig 5. switching losses IGBT, Eon=f(RG),Eoff=f(RG), VGE=±15V,IC=100A,VCE=600V Fig 6. transient thermal impedance IGBT , Zthjc=f(t) Fig 7. reverse bias safe operating area IGBT, ， ℃ IC=f(VCE),VGE=±15V,RGoff=5.6Ω Tvj=125 ，Fig 8. forward characteristic of Diode IF=f(VF)

http://www.lgesem i.com mail:lge@lgesemi.comRevision:20240201-P9 GPK100PI120D6T4 Fi g 9. switching losses Diode, Err=f(IF),,RGon=5.6Ω,VCE=600V Fig 10. switching losses Diode, Err=f(RG),IF=100A,VCE=600V Fig 11.NTC-Thermistor-temperature ch aracteristic(typical)

http://www.lgesem i.com mail:lge@lgesemi.comRevision:20240201-P10 GPK100PI120D6T4 Internal Circuit: Package Dimension Dimensions in Millimeters