GPA1601_V01 THINKISEMI | Alldatasheet
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Technical content
Features
/hexstar2 Low forward voltage drop /hexstar2 Avalanche energy rated(100% guarantee) /hexstar2 High current capability /hexstar2 Case: TO-220AC open metal heatsink package /hexstar2 High surge current capability /hexstar2 Weight: 2.2 gram approximately /hexstar2 Polarity: As marked on diode body method 208 /hexstar2 Mounting position: Any /hexstar2 Terminals: Solderable per MIL-STD-202 Mechanical Data /hexstar2 Low reverse leakage current /hexstar2 Epoxy: UL 94V-0 rate flame retardant GPA1601 thru GPA1607 Pb Free Plating Product GPA1601 thru GPA1607
16.0 Amperes Heatsink Single Glass Passivated Process Avalanche Rectifier Diode
© 1995 Thinki Semiconductor Co., Ltd. http://www.thinkisemi.com.tw/ Page 1/3 Application Pb /hexstar2 PhotoVoltaic BY-PASS DIODE /hexstar2 PhotoVoltaic High-amperage Combiner Boxes /hexstar2 Alternator(Automotive Wireharness/Capacitor Bank) Rev.10T TO-220AC/TO-220-2L Internal Configuration MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS For capacitive load, derate current by 20%. Single phase, half wave, 60Hz, resistive or inductive load. Rating at 25 ambient temperature unless otherwise specified. AK Symbol GPA 1601 GPA 1602 GPA 1603 GPA 1604 GPA 1605 GPA 1606 GPA
1607 Units
VRRM 50 100 200 400 600 800 1000 V VRMS 35 70 140 280 420 560 700 V VDC 50 100 200 400 600 800 1000 V I(AV) A IFSM A VF V IR uA Cj pF RθJC TJ TSTG Note 1. Measured at 1 MHz and Applied Reverse Voltage of 4.0 V D.C. 2. Mount on P.C. Board with 2"x3" x0.25" Al-plate Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Rectified @Tc = 120℃ Maximum Instantaneous Forward Voltage @ 16.0A Maximum DC Reverse Current @ T A =25℃ at Rated DC Blocking Voltage @ TA=125℃ Type Number Maximum Recurrent Peak Reverse Voltage Peak Forward Surge Current, 8.3 ms Single Half Sine- wave Superimposed on Rated Load (JEDEC method ) Typical Junction Capacitance (Note 1) Typical Thermal Resistance (Note 2) Operating Temperature Range 1.1 100 Storage Temperature Range 16.0 250 5.0 1.5 -65 to +150 -65 to +150
© 1995 Thinki Semiconductor Co., Ltd. http://www.thinkisemi.com.tw/ Page 2/3Rev.10T 100 200 250 300 1 10 100 I , PEAK FORWARD SURGE CURRENT (A) FSM NUMBER OF CYCLES AT 60Hz Fig. 3 Max Non-Repetitive Surge Current 8.3 ms single half-sine-wave JEDEC method 100 1000 0.1 1.0 10 100 V , REVERSE VOLTAGE (V) Fig. 4 Typical Junction Capacitance R C , CAPACITANCE (pF) j 16.0 20.0 0 60 120 180 I , AVERAGE FORWARD CURRENT (A) (AV) T , CASE TEMPERATURE ( C) Fig. 1 Forward Current Derating Curve C 0.1 1.0 100 0.2 0.6 1.0 1.4 I , INSTANTANEOUS FORWARD CURRENT (A) F V , INSTANTANEOUS FORWARD VOLTAGE (V) Fig. 2 Typical Forward Characteristics F Pulse width = 300 s 2% duty cycle m 150 12.0 8.0 4.0 GPA1601 thru GPA1607
© 1995 Thinki Semiconductor Co., Ltd. http://www.thinkisemi.com.tw/ Page 3/3Rev.10T TO-220AC/TO-220-2L Package Outline: Unit : inch (mm) .196(5.00) .054(1.39) .038(0.96) .419(10.66) .139(3.55) MIN .624(15.87) .269(6.85) .548(13.93) .50(12.7)MIN .177(4.5)MAX .226(5.75) .163(4.16) .045(1.15) .019(0.50) .025(0.65)MAX .1(2.54).1(2.54) .387(9.85) GPA1601 thru GPA1607