GPA1601 THINKISEMI | Alldatasheet
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Features
/hexstar2 Low forward voltage drop /hexstar2 Glass passivated chip junction /hexstar2 High current capability /hexstar2 Case: Heatsink TO-220AC /hexstar2 High surge current capability /hexstar2 Weight: 2.1 gram approxiamtely /hexstar2 Polarity: As marked on diode body method 208 /hexstar2 Mounting position: Any /hexstar2 Terminals: Solderable per MIL-STD-202 Mechanical Data /hexstar2 Low reverse leakage current /hexstar2 Epoxy: UL 94V-0 rate flame retardant GPA1601 thru GPA1607 Pb Free Plating Product GPA1601 thru GPA1607 Application /hexstar2 PV diode for Solar Junction Box /hexstar2 Solar power supply and PV system /hexstar2 BY-PASS DIODE application Pb
16.0 Ampere General Purpose Rectifier Diodes for PhotoVoltaic
Unit : inch (mm) © 2006 Thinki Semiconductor Co.,Ltd. http://www.thinkisemi.com/ Page 1/2Rev.04/2014 Positive Negative Suffix "R" .196(5.00) .054(1.39) .038(0.96) .419(10.66) .139(3.55) MIN .624(15.87) .269(6.85) .548(13.93) .50(12.7)MIN .177(4.5)MAX .226(5.75) .163(4.16) .045(1.15) .019(0.50) .025(0.65)MAX .1(2.54).1(2.54) .387(9.85) Maximum Ratings and Electrical Characteristics Rating at 25℃ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20% Symbol GPA 1601 GPA 1602 GPA 1603 GPA 1604 GPA 1605 GPA 1606 GPA
1607 Units
VRRM 50 100 200 400 600 800 1000 V VRMS 35 70 140 280 420 560 700 V VDC 50 100 200 400 600 800 1000 V I(AV) A IFSM A VF V IR uA Cj pF RθJC TJ TSTG Note 1. Measured at 1 MHz and Applied Reverse Voltage of 4.0 V D.C. 2. Mount on P.C. Board with 2"x3" x0.25" Al-plate Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Rectified @Tc = 100℃ Maximum Instantaneous Forward Voltage @ 16.0A Maximum DC Reverse Current @ T A =25℃ at Rated DC Blocking Voltage @ TA=125℃ Type Number Maximum Recurrent Peak Reverse Voltage Peak Forward Surge Current, 8.3 ms Single Half Sine- wave Superimposed on Rated Load (JEDEC method ) Typical Junction Capacitance (Note 1) Typical Thermal Resistance (Note 2) Operating Temperature Range 1.1 100 Storage Temperature Range 16.0 250 250 2.0 -65 to +150 -65 to +150
© 2006 Thinki Semiconductor Co.,Ltd. http://www.thinkisemi.com/ Page 2/2Rev.04/2014 GPA1601 thru GPA1607 RATINGS AND CHARACTERISTICS CURVES(GPA1601 thru GPA1607)