GP50B60PD

IRGP50B60PD IRF | Alldatasheet

Document overview

• Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
• PDF pages: 10

Technical content

Features

• NPT Technology, Positive Temperature Coefficient
• Lower VCE(SAT)
• Lower Parasitic Capacitances
• Minimal Tail Current
• HEXFRED Ultra Fast Soft-Recovery Co-Pack Diode
• Tighter Distribution of Parameters
• Higher Reliability Benefits
• Parallel Operation for Higher Current Applications
• Lower Conduction Losses and Switching Losses
• Higher Switching Frequency up to 150kHz E G n-channel C VCES = 600V VCE(on) typ. = 2.00V @ VGE = 15V IC = 33A Equivalent MOSFET Parameters/G129 RCE(on) typ. = 61mΩ ID (FET equivalent) = 50A

Applications

• Telecom and Server SMPS
• PFC and ZVS SMPS Circuits
• Uninterruptable Power Supplies
• Consumer Electronics Power Supplies TO-247AC G C E SMPS IGBT /G80/G68/G32/G45/G32/G57/G52/G54/G50/G52/G66 Absolute Maximum Ratings Parameter Max. Units VCES Collector-to-Emitter Voltage 600 V IC @ TC = 25°C Continuous Collector Current 75 IC @ TC = 100°C Continuous Collector Current 42 ICM Pulse Collector Current (Ref. Fig. C.T.4) 150 ILM Clamped Inductive Load Current /c100 150 A IF @ TC = 25°C Diode Continous Forward Current 50 IF @ TC = 100°C Diode Continous Forward Current 25 IFRM Maximum Repetitive Forward Current /c101 100 VGE Gate-to-Emitter Voltage ±20 V PD @ TC = 25°C Maximum Power Dissipation 370 W PD @ TC = 100°C Maximum Power Dissipation 150 TJ Operating Junction and -55 to +150 TSTG Storage Temperature Range °C Soldering Temperature for 10 sec. 300 (0.063 in. (1.6mm) from case) Mounting Torque, 6-32 or M3 Screw 10 lbf·in (1.1 N·m) Thermal Resistance Parameter Min. Typ. Max. Units RθJC (IGBT) Thermal Resistance Junction-to-Case-(each IGBT) ––– ––– 0.34 °C/W RθJC (Diode) Thermal Resistance Junction-to-Case-(each Diode) ––– ––– 0.64 RθCS Thermal Resistance, Case-to-Sink (flat, greased surface) ––– 0.24 ––– RθJA Thermal Resistance, Junction-to-Ambient (typical socket mount) ––– ––– 40 Weight ––– 6.0 (0.21) ––– g (oz)

2 www.irf.com Notes: rating @ 25°C for applications up to 150kHz. These are provided for comparison purposes (only) with equivalent MOSFET sol utions. /G130 VCC = 80% (VCES), VGE = 20V, L = 28 µH, RG = 22 Ω. /G131/G32Pulse width limited by max. junction temperature. /G132 Energy losses include "tail" and diode reverse recovery, Data generated with use of Diode 30ETH06. /G133 Coes eff. is a fixed capacitance that gives the same charging time as C oes while VCE is rising from 0 to 80% V CES. Coes eff.(ER) is a fixed capacitance that stores the same energy as C oes while VCE is rising from 0 to 80% V CES. Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions Ref.Fig V(BR)CES Collector-to-Emitter Breakdown Voltage 600 — — V VGE = 0V, IC = 500µA ∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage —0 . 6 1— V / ° C VGE = 0V, IC = 1mA (25°C-125°C) RG Internal Gate Resistance — 1.2 — Ω 1MHz, Open Collector —2 . 0 2 . 2 IC = 33A, VGE = 15V 4, 5,6,8,9 VCE(on) Collector-to-Emitter Saturation Voltage — 2.4 2.6 V IC = 50A, VGE = 15V —2 . 6 2 . 9 IC = 33A, VGE = 15V, TJ = 125°C —3 . 2 3 . 6 IC = 50A, VGE = 15V, TJ = 125°C VGE(th) Gate Threshold Voltage 3.0 4.0 5.0 V IC = 250µA 7,8,9 ∆VGE(th)/∆TJ Threshold Voltage temp. coefficient — -7.07 — mV/°C VCE = VGE, IC = 1.0mA gfe Forward Transconductance — 42 — S VCE = 50V, IC = 33A, PW = 80µs ICES Collector-to-Emitter Leakage Current — 5.0 500 µA VGE = 0V, VCE = 600V —1 . 0— m A VGE = 0V, VCE = 600V, TJ = 125°C —1 . 3 1 . 7 IF = 25A, VGE = 0V VFM Diode Forward Voltage Drop — 1.5 2.0 V IF = 50A, VGE = 0V 10 —1 . 3 1 . 7 IF = 25A, VGE = 0V, TJ = 125°C IGES Gate-to-Emitter Leakage Current — — ±100 nA VGE = ±20V, VCE = 0V Switching Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Ref.Fig Qg Total Gate Charge (turn-on) — 240 360 IC = 33A 17 Qgc Gate-to-Collector Charge (turn-on) — 41 82 nC VCC = 400V CT1 Qge Gate-to-Emitter Charge (turn-on) — 84 130 VGE = 15V Eon Turn-On Switching Loss — 360 590 IC = 33A, VCC = 390V CT3 Eoff Turn-Off Switching Loss — 380 420 µJ VGE = +15V, RG = 3.3Ω, L = 210µH Etotal Total Switching Loss — 740 960 TJ = 25°C /c102/c3/c3 td(on) Turn-On delay time — 34 44 IC = 33A, VCC = 390V CT3 tr Rise time — 26 36 ns VGE = +15V, RG = 3.3Ω, L = 210µH td(off) Turn-Off delay time — 130 140 TJ = 25°C /c102/c3/c3 tf Fall time — 43 56 Eon Turn-On Switching Loss — 610 880 IC = 33A, VCC = 390V CT3 Eoff Turn-Off Switching Loss — 460 530 µJ VGE = +15V, RG = 3.3Ω, L = 210µH 11,13 Etotal Total Switching Loss — 1070 1410 TJ = 125°C /c102 WF1,WF2 td(on) Turn-On delay time — 33 43 IC = 33A, VCC = 390V CT3 tr Rise time — 26 36 ns VGE = +15V, RG = 3.3Ω, L = 200µH 12,14 td(off) Turn-Off delay time — 140 160 TJ = 125°C/c3/c102/c3/c3 WF1,WF2 tf Fall time — 50 65 Cies Input Capacitance — 4750 — VGE = 0V 16 Coes Output Capacitance — 390 — VCC = 30V Cres Reverse Transfer Capacitance — 58 — pF f = 1Mhz Coes eff. Effective Output Capacitance (Time Related) /c103 — 280 — VGE = 0V, VCE = 0V to 480V 15 Coes eff. (ER) Effective Output Capacitance (Energy Related) /c103 — 190 — TJ = 150°C, IC = 150A 3 RBSOA Reverse Bias Safe Operating Area FULL SQUARE VCC = 480V, Vp =600V CT2 Rg = 22Ω, VGE = +15V to 0V trr Diode Reverse Recovery Time — 50 75 ns TJ = 25°C I F = 25A, VR = 200V, 19 — 105 160 TJ = 125°C di/dt = 200A/µs Qrr Diode Reverse Recovery Charge — 112 375 nC TJ = 25°C I F = 25A, VR = 200V, 21 — 420 4200 TJ = 125°C di/dt = 200A/µs Irr Peak Reverse Recovery Current — 4.5 10 A TJ = 25°C I F = 25A, VR = 200V, 19,20,21,22 —8 . 01 5 TJ = 125°C di/dt = 200A/µs CT5 Conditions

www.irf.com 3 Fig. 1 - Maximum DC Collector Current vs. Case Temperature Fig. 2 - Power Dissipation vs. Case Temperature Fig. 3 - Reverse Bias SOA TJ = 150°C; VGE =15V Fig. 4 - Typ. IGBT Output Characteristics TJ = -40°C; tp = 80µs Fig. 5 - Typ. IGBT Output Characteristics TJ = 25°C; tp = 80µs Fig. 6 - Typ. IGBT Output Characteristics TJ = 125°C; tp = 80µs 0 20 40 60 80 100 120 140 160 TC (°C) 100 150 200 250 300 350 400 Ptot (W 02468 1 0 VCE (V) 120 160 200 240 280 320 ICE (A) VGE = 15V VGE = 12V VGE = 10V VGE = 8.0V VGE = 6.0V 25 50 75 100 125 150 TC, Case Temperature (°C) IC, Collector Current (A) Limited by package 10 100 1000 VCE (V) 100 1000 IC A) 02468 1 0 VCE (V) 120 160 200 240 280 320 ICE (A) VGE = 15V VGE = 12V VGE = 10V VGE = 8.0V VGE = 6.0V 02468 1 0 1 2 1 4 1 6 1 8 2 0 VCE (V) 120 160 200 240 280 320 ICE (A) VGE = 15V VGE = 12V VGE = 10V VGE = 8.0V VGE = 6.0V

4 www.irf.com Fig. 8 - Typical VCE vs. VGE TJ = 25°C Fig. 9 - Typical VCE vs. VGE TJ = 125°C Fig. 12 - Typ. Switching Time vs. IC TJ = 125°C; L = 200µH; VCE = 390V, RG = 3.3Ω; VGE = 15V. Diode clamp used: 30ETH06 (See C.T.3) Fig. 11 - Typ. Energy Loss vs. IC TJ = 125°C; L = 200µH; VCE = 390V, RG = 3.3Ω; VGE = 15V. Diode clamp used: 30ETH06 (See C.T.3) Fig. 10 - Maximum. Diode Forward Characteristics tp = 80µs Fig. 7 - Typ. Transfer Characteristics VCE = 50V; tp = 10µs 0 5 10 15 20 VGE (V) 100 200 300 400 500 600 ICE (A) TJ = 25°C TJ = 125°C TJ = 125°C TJ = 25°C 0 5 10 15 20 VGE (V) VCE (V) ICE = 15A ICE = 33A ICE = 50A 0 5 10 15 20 VGE (V) VCE (V) ICE = 15A ICE = 33A ICE = 50A 10 20 30 40 50 60 70 IC (A) 200 400 600 800 1000 1200 1400 1600 1800 Energy (µJ) EOFF EON 0 10 20 30 40 50 60 70 IC (A) 100 1000 Swiching Tim e (ns) tR tdOFF tF tdON 100 FM T = 150°C T = 125°C T = 25°C J J J A Forward Voltage Drop - V (V) /G73/G110/G115/G116/G97/G110/G116/G97/G110/G101/G111/G117/G115/G32/G70/G111/G114/G119/G97/G114/G100/G32/G67/G117/G114/G114/G101/G110/G116/G32/G45/G32/G73/G70/G32/G40/G65/G41

www.irf.com 5 Fig. 14 - Typ. Switching Time vs. RG TJ = 125°C; L = 200µH; VCE = 390V, ICE = 33A; VGE = 15V Diode clamp used: 30ETH06 (See C.T.3) Fig. 13 - Typ. Energy Loss vs. RG TJ = 125°C; L = 200µH; VCE = 390V, ICE = 33A; VGE = 15V Diode clamp used: 30ETH06 (See C.T.3) Fig. 16- Typ. Capacitance vs. VCE VGE= 0V; f = 1MHz Fig. 15- Typ. Output Capacitance Stored Energy vs. VCE Fig. 17 - Typical Gate Charge vs. VGE ICE = 33A Fig. 18 - Normalized Typ. VCE(on) vs. Junction Temperature IC = 33A, VGE= 15V 0 10 20 30 40 RG (Ω) 200 400 600 800 1000 1200 1400 1600 1800 Energy (µJ) EON EOFF 0 10 20 30 40 RG (Ω) 100 1000 Swiching Tim e (ns) tR tdOFF tF tdON 0 100 200 300 400 500 600 700 Voltage (V) Eoes (µJ) 0 100 200 300 400 500 VCE (V) 100 1000 10000 Capacitance (pF) Cies Coes Cres 0 50 100 150 200 250 300 Q G, Total Gate Charge (nC) VGE, Gate-to-Em itter Voltage (V) VCE = 480V -60 -40 -20 0 20 40 60 80 100120 140160 TC (°C) 0.5 0.8 1.0 1.3 1.5 Norm alized VCE(on)

6 www.irf.com /G70/G105/G103/G46/G32/G50/G48/G32/G45/G32/G84/G121/G112/G105/G99/G97/G108/G32/G82/G101/G99/G111/G118/G101/G114/G121/G32/G67/G117/G114/G114/G101/G110/G116/G32/G118/G115/G46/G32/G100/G105/G102/G47/G100/G116/G70/G105/G103/G46/G32/G49/G57/G32/G45/G32/G84/G121/G112/G105/G99/G97/G108/G32/G82/G101/G118/G101/G114/G115/G101/G32/G82/G101/G99/G111/G118/G101/G114/G121/G32/G118/G115/G46/G32/G100/G105/G102/G47/G100/G116 /G70/G105/G103/G46/G32/G50/G49/G32/G45/G32/G84/G121/G112/G105/G99/G97/G108/G32/G83/G116/G111/G114/G101/G100/G32/G67/G104/G97/G114/G103/G101/G32/G118/G115/G46/G32/G100/G105/G102/G47/G100/G116 /G70/G105/G103/G46/G32/G50/G50/G32/G45/G32/G84/G121/G112/G105/G99/G97/G108/G32/G100/G105/G40/G114/G101/G99/G41/G77/G47/G100/G116/G32/G118/G115/G46/G32/G100/G105/G102/G47/G100/G116/G44 100 120 140 100 1000 fdi /dt - (A/µs) A I = 50A I = 25A I = 10A F F F V = 200V T = 125°C T = 25°C R J J /G116/G114/G114/G45/G32/G40/G110/G67/G41 100 1000 fdi /dt - (A/µs) A I = 50A I = 25A I = 10A V = 200V T = 125°C T = 25°C R J J F F F /G73/G114/G114/G45/G32/G40/G32/G65/G41 200 400 600 800 1000 1200 1400 100 1000 fdi /dt - (A/µs) A I = 50A I = 25A I = 10A V = 200V T = 125°C T = 25°C R J J F F F /G81/G114/G114/G45/G32/G40/G110/G67/G41 100 1000 10000 100 1000 fdi /dt - (A/µs) A I = 50A I = 25A I = 10A F F F V = 200V T = 125°C T = 25°C R J J /G100/G105/G32/G40/G114/G101/G99/G41/G32/G77/G47/G100/G116/G45/G32/G40/G65/G32/G47/G181/G115/G41

www.irf.com 7 Fig. 24. Maximum Transient Thermal Impedance, Junction-to-Case (DIODE) Fig 23. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT) Fig. 25 - Forward SOA, TC = 25°C; TJ ≤ 150°C 1E-006 1E-005 0.0001 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) 0.0001 0.001 0.01 0.1 Therm al Response ( Z thJC ) 0.20 0.10 D = 0.50 0.02 0.01 0.05 SINGLE PULSE ( THERMAL RESPONSE ) Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc Ri (°C/W) τi (sec) 0.0789 0.000277 0.2614 0.040918 τJ τJ τ τC Ci i/Ri Ci= τi/Ri 1E-006 1E-005 0.0001 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) 0.0001 0.001 0.01 0.1 Therm al Response ( Z thJC ) 0.20 0.10 D = 0.50 0.02 0.01 0.05 SINGLE PULSE ( THERMAL RESPONSE ) Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc Ri (°C/W) τi (sec) 0.0733 0.000420 0.1301 0.002274 0.1358 0.023026 τJ τJ τ τC Ci τi/Ri Ci= τi/Ri 1 10 100 1000 VDS, Drain-to-Source Voltage (V) 0.01 0.1 100 1000 ID, Drain-to-Source Current (A) OPERATION IN THIS AREA LIMITED BY VCE(on) Tc = 25°C Tj = 150°C Single Pulse 100µsec 1msec 10msec 100msec

8 www.irf.com L Rg

80 V DUT

L Fig.C.T.4 - Resistive Load Circuit Rg VCCDUT R = VCC ICM Fig.C.T.3 - Switching Loss Circuit Fig. C.T.5 - Reverse Recovery Parameter Test Circuit REVERSE RECOVERY CIRCUIT IRFP250 D.U.T. L = 70µH V = 200VR 0.01 Ω G D S dif/dt ADJUST PFC diode L Rg VCCDUT / DRIVER

www.irf.com 9 Fig. WF1 - Typ. Turn-off Loss Waveform @ TJ = 25°C using Fig. CT.3 Fig. WF2 - Typ. Turn-on Loss Waveform @ TJ = 25°C using Fig. CT.3 Fig. WF3 - Reverse Recovery Waveform and Definitions /G52/G46/G32/G81/G114/G114/G32/G45/G32/G65/G114/G101/G97/G32/G117/G110/G100/G101/G114/G32/G99/G117/G114/G118/G101/G32/G100/G101/G102/G105/G110/G101/G100/G32/G98/G121/G32/G116/G114/G114 /G32/G32/G32/G32/G97/G110/G100/G32/G73/G82/G82/G77 /G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G116/G114/G114/G32/G88/G32/G73/G82/G82/G77 /G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G81/G114/G114/G32/G61 /G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G50 /G53/G46/G32/G100/G105/G40/G114/G101/G99/G41/G77/G47/G100/G116/G32/G45/G32/G80/G101/G97/G107/G32/G114/G97/G116/G101/G32/G111/G102/G32/G99/G104/G97/G110/G103/G101/G32/G111/G102 /G32/G32/G32/G32/G99/G117/G114/G114/G101/G110/G116/G32/G100/G117/G114/G105/G110/G103/G32/G116/G98/G32/G112/G111/G114/G116/G105/G111/G110/G32/G111/G102/G32/G116/G114/G114 ta tb trr Qrr IF IRRM I RRM0.5 di(rec)M/dt

0.75 IRRM

/G49/G46/G32/G100/G105/G102/G47/G100/G116/G32/G45/G32/G82/G97/G116/G101/G32/G111/G102/G32/G99/G104/G97/G110/G103/G101/G32/G111/G102/G32/G99/G117/G114/G114/G101/G110/G116 /G32/G32/G32/G32/G116/G104/G114/G111/G117/G103/G104/G32/G122/G101/G114/G111/G32/G99/G114/G111/G115/G115/G105/G110/G103 /G50/G46/G32/G73/G82/G82/G77/G32/G45/G32/G80/G101/G97/G107/G32/G114/G101/G118/G101/G114/G115/G101/G32/G114/G101/G99/G111/G118/G101/G114/G121/G32/G99/G117/G114/G114/G101/G110/G116 /G51/G46/G32/G116/G114/G114/G32/G45/G32/G82/G101/G118/G101/G114/G115/G101/G32/G114/G101/G99/G111/G118/G101/G114/G121/G32/G116/G105/G109/G101/G32/G109/G101/G97/G115/G117/G114/G101/G100 /G32/G32/G32/G32/G102/G114/G111/G109/G32/G122/G101/G114/G111/G32/G99/G114/G111/G115/G115/G105/G110/G103/G32/G112/G111/G105/G110/G116/G32/G111/G102/G32/G110/G101/G103/G97/G116/G105/G118/G101 /G32/G32/G32/G32/G103/G111/G105/G110/G103/G32/G73/G70/G32/G116/G111/G32/G112/G111/G105/G110/G116/G32/G119/G104/G101/G114/G101/G32/G97/G32/G108/G105/G110/G101/G32/G112/G97/G115/G115/G105/G110/G103 /G32/G32/G32/G32/G116/G104/G114/G111/G117/G103/G104/G32/G48/G46/G55/G53/G32/G73/G82/G82/G77/G32/G97/G110/G100/G32/G48/G46/G53/G48/G32/G73/G82/G82/G77 /G32/G32/G32/G32/G101/G120/G116/G114/G97/G112/G111/G108/G97/G116/G101/G100/G32/G116/G111/G32/G122/G101/G114/G111/G32/G99/G117/G114/G114/G101/G110/G116 -100 100 200 300 400 500 600 700 -0.05 0 0.05 0.1 0.15 Time (uS) Vce (V) Ice (A) tf Eoff Loss 90% Ice 5% Vce 5% Ice Vce Ice -100 100 200 300 400 500 600 700 3.95 4.05 4.15 4.25 Time (uS) Vce (V) -10 Ice (A) Eon Loss tr 90% Ice 10% Ice 5% Vce Vce Ice

10 www.irf.com IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information . 07/07 Data and specifications subject to change without notice. This product has been designed and qualified for Industrial market. Qualification Standards can be found on IR’s Web site. TO-247AC package is not recommended for Surface Mount Application. /G84/G79/G45/G50/G52/G55/G65/G67/G32/G80/G97/G114/G116/G32/G77/G97/G114/G107/G105/G110/G103/G32/G73/G110/G102/G111/G114/G109/G97/G116/G105/G111/G110 /G84/G79/G45/G50/G52/G55/G65/G67/G32/G80/G97/G99/G107/G97/G103/G101/G32/G79/G117/G116/G108/G105/G110/G101 /G68/G105/G109/G101/G110/G115/G105/G111/G110/G115/G32/G97/G114/G101/G32/G115/G104/G111/G119/G110/G32/G105/G110/G32/G109/G105/G108/G108/G105/G109/G101/G116/G101/G114/G115/G32/G40/G105/G110/G99/G104/G101/G115/G41 /c47/c44 /c49 /c40 /c3 /c43 /c44/c49/c55/c40/c53 /c49/c36/c55 /c44/c50/c49 /c36 /c47 /c47 /c50/c42/c50 /c53/c40 /c38/c55/c44 /c41 /c44/c40/c53 /c36 /c54 /c54/c40/c48 /c37/c47/c60 /c24/c25/c3/c3/c3 /c3/c3/c3/c3/c3/c3/c3/c3/c24/c26 /c44/c53/c41/c51 /c40/c22/c19 /c3/c20/c22/c24/c43 /c60/c40/c36 /c53 /c3/c20 /c3/c32/c3/c21/c19/c19/c20 /c39/c36 /c55/c40 /c3 /c38 /c50 /c39/c40 /c51/c36 /c53 /c55/c3/c49/c56/c48/c37/c40 /c53 /c76 /c81/c71/c76/c70/c68 /c87 /c72/c86/c3/c5/c47/c72/c68/c71/c16 /c41/c85/c72/c72/c5 /c58/c40/c40 /c46/c3/c22/c24/c47 /c50/c55 /c3/c38/c50/c39/c40 /c44/c49/c3/c55/c43/c40 /c3/c36 /c54 /c54/c40 /c48/c37/c47/c60 /c3/c47/c44/c49/c40 /c3 /c5/c43 /c5 /c36 /c54 /c54/c40/c48 /c37 /c47/c40/c39/c3/c50 /c49 /c3/c58/c58/c3/c22/c24/c15/c3/c21/c19/c19/c20 /c49 /c82 /c87/c72/c29/c3/c5/c51/c5/c3/c76/c81/c3/c68/c86/c86/c72 /c80/c69 /c79/c92/c3/c79 /c76/c81/c72/c3/c83 /c82/c86 /c76 /c87 /c76 /c82/c81 /c40/c59 /c36 /c48 /c51 /c47 /c40 /c29 /c58/c44/c55/c43/c3/c36/c54/c54 /c40/c48 /c37 /c47/c60/c3 /c55/c43/c44/c54/c3/c44/c54/c3/c36/c49/c3/c44/c53/c41 /c51 /c40 /c22/c19/c3 /c47 /c50/c55/c3 /c38/c50/c39/c40/c3/c24/c25/c24/c26 /G78/G111/G116/G101/G58/G32/G70/G111/G114/G32/G116/G104/G101/G32/G109/G111/G115/G116/G32/G99/G117/G114/G114/G101/G110/G116/G32/G100/G114/G97/G119/G105/G110/G103/G32/G112/G108/G101/G97/G115/G101/G32/G114/G101/G102/G101/G114/G32/G116/G111/G32/G73/G82/G32/G119/G101/G98/G115/G105/G116/G101/G32/G97/G116/G32/G104/G116/G116/G112/G58/G47/G47/G119/G119/G119/G46/G105/G114/G102/G46/G99/G111/G109/G47/G112/G97/G99/G107/G97/G103/G101/G47