GP4063D

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Document overview

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• PDF pages: 11

Technical content

Features

• Low V CE (ON) Trench IGBT Technology
• Low switching losses
• Maximum Junction temperature 175 °C
• 5 μS short circuit SOA
• Square RBSOA
• 100% of the parts tested for 4X rated current (I LM)
• Positive V CE (ON) Temperature co-efficient
• Ultra fast soft Recovery Co-Pak Diode
• Tight parameter distribution
• Lead Free Package Benefits
• High Efficiency in a wide range of applications
• Suitable for a wide range of switching frequencies due to Low V CE (ON) and Low Switching losses
• Rugged transient Performance for increased reliability
• Excellent Current sharing in parallel operation
• Low EMI G C E Gate Collector Emitter IRGP4063DPbF Absolute Maximum Ratings Parameter Max. Units VCES Collector-to-Emitter Voltage 600 V IC @ TC = 25°C Continuous Collector Current 96 IC @ TC = 100°C Continuous Collector Current 48 ICM Pulse Collector Current 200 ILM Clamped Inductive Load Current /c99 192 A IF @ TC = 25°C Diode Continous Forward Current 96 IF @ TC = 100°C Diode Continous Forward Current 48 IFM Diode Maximum Forward Current /c101 192 VGE Continuous Gate-to-Emitter Voltage ±20 V Transient Gate-to-Emitter Voltage ±30 PD @ TC = 25°C Maximum Power Dissipation 330 W PD @ TC = 100°C Maximum Power Dissipation 170 TJ Operating Junction and -55 to +175 TSTG Storage Temperature Range °C Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case) Mounting Torque, 6-32 or M3 Screw 10 lbf·in (1.1 N·m) Thermal Resistance Parameter Min. Typ. Max. Units RθJC (IGBT) Thermal Resistance Junction-to-Case-(each IGBT) ––– ––– 0.45 °C/W RθJC (Diode) Thermal Resistance Junction-to-Case-(each Diode) ––– ––– 0.92 RθCS Thermal Resistance, Case-to-Sink (flat, greased surface) ––– 0.24 ––– RθJA Thermal Resistance, Junction-to-Ambient (typical socket mount) ––– ––– 40 /G73/G82/G71/G80/G52/G48/G54/G51/G68/G80/G98/G70 /G73/G82/G71/G80/G52/G48/G54/G51/G68/G45/G69/G80/G98/G70 /G32/G32/G32/G32/G32/G32/G32/G32/G49/G32/G32/G32/G32/G119/G119/G119/G46/G105/G114/G102/G46/G99/G111/G109/G32/G32/G32/G32/G32/G32/G169/G32/G50/G48/G49/G51/G32/G73/G110/G116/G101/G114/G110/G97/G116/G105/G111/G110/G97/G108/G32/G82/G101/G99/G116/G105/G102/G105/G101/G114 /G77/G97/G114/G99/G104/G32/G49/G53/G44/G32/G50/G48/G49/G51 GC E C G G E C IRGP4063D-EPbF

/G32/G32/G32/G32/G32/G32/G32/G32/G50/G32/G32/G32/G32/G119/G119/G119/G46/G105/G114/G102/G46/G99/G111/G109/G32/G32/G32/G32/G32/G32/G169/G32/G50/G48/G49/G51/G32/G73/G110/G116/G101/G114/G110/G97/G116/G105/G111/G110/G97/G108/G32/G82/G101/G99/G116/G105/G102/G105/G101/G114 /G77/G97/G114/G99/G104/G32/G49/G53/G44/G32/G50/G48/G49/G51 /G73/G82/G71/G80/G52/G48/G54/G51/G68/G80/G98/G70/G47/G73/G82/G71/G80/G52/G48/G54/G51/G68/G45/G69/G80/G98/G70 Notes: /G129VCC = 80% (VCES), VGE = 20V, L = 200μH, RG = 10Ω. /G130This is only applied to TO-247AC package. /G131Pulse width limited by max. junction temperature. /G132Refer to AN-1086 for guidelines for measuring V (BR)CES safely. Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions Ref.Fig V(BR)CES Collector-to-Emitter Breakdown Voltage 6 0 0 ——V VGE = 0V, IC = 150μA /c102 CT6 ΔV(BR)CES/ΔTJ Temperature Coeff. of Breakdown Voltage —0 . 3 0— V / ° C VGE = 0V, IC = 1mA (25°C-175°C) CT6 —1 . 6 5 2 . 1 4 IC = 48A, VGE = 15V, TJ = 25°C 5,6,7 VCE(on) Collector-to-Emitter Saturation Voltage — 2.0 — V IC = 48A, VGE = 15V, TJ = 150°C 9,10,11 —2 . 0 5— IC = 48A, VGE = 15V, TJ = 175°C VGE(th) Gate Threshold Voltage 4.0 — 6.5 V VCE = VGE, IC = 1.4mA 9, 10, ΔVGE(th)/ΔTJ Threshold Voltage temp. coefficient — -21 — mV/°C VCE = VGE, IC = 1.0mA (25°C - 175°C) 11, 12 gfe Forward Transconductance — 32 — S VCE = 50V, IC = 48A, PW = 80μs ICES Collector-to-Emitter Leakage Current — 1.0 150 μA VGE = 0V, VCE = 600V — 450 1000 VGE = 0V, VCE = 600V, TJ = 175°C VFM Diode Forward Voltage Drop — 1.95 2.91 V IF = 48A 8 —1 . 4 5— IF = 48A, TJ = 175°C IGES Gate-to-Emitter Leakage Current — — ±100 nA VGE = ±20V Switching Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Ref.Fig Qg Total Gate Charge (turn-on) — 95 140 IC = 48A 24 Qge Gate-to-Emitter Charge (turn-on) — 28 42 nC VGE = 15V CT1 Qgc Gate-to-Collector Charge (turn-on) — 35 53 VCC = 400V Eon Turn-On Switching Loss — 625 1141 IC = 48A, VCC = 400V, VGE = 15V CT4 Eoff Turn-Off Switching Loss — 1275 1481 μJ RG = 10Ω, L = 200μH, LS = 150nH, TJ = 25°C Etotal Total Switching Loss — 1900 2622 Energy losses include tail & diode reverse recovery td(on) Turn-On delay time — 60 78 IC = 48A, VCC = 400V, VGE = 15V CT4 tr Rise time — 40 56 ns RG = 10Ω, L = 200μH, LS = 150nH, TJ = 25°C td(off) Turn-Off delay time — 145 176 tf Fall time — 35 46 Eon Turn-On Switching Loss — 1625 — IC = 48A, VCC = 400V, VGE=15V 13, 15 Eoff Turn-Off Switching Loss — 1585 — μJ RG=10Ω, L=200μH, LS=150nH, TJ = 175°C /c102/c3 CT4 Etotal Total Switching Loss — 3210 — Energy losses include tail & diode reverse recovery WF1, WF2 td(on) Turn-On delay time — 55 — IC = 48A, VCC = 400V, VGE = 15V 14, 16 tr Rise time — 45 — ns RG = 10Ω, L = 200μH, LS = 150nH CT4 td(off) Turn-Off delay time — 165 — TJ = 175°C WF1 tf Fall time — 45 — WF2 Cies Input Capacitance — 3025 — pF VGE = 0V 23 Coes Output Capacitance — 245 — VCC = 30V Cres Reverse Transfer Capacitance — 90 — f = 1.0Mhz TJ = 175°C, IC = 192A 4 RBSOA Reverse Bias Safe Operating Area FULL SQUARE VCC = 480V, Vp =600V CT2 Rg = 10Ω, VGE = +15V to 0V SCSOA Short Circuit Safe Operating Area 5 — — μs VCC = 400V, Vp =600V 22, CT3 Rg = 10Ω, VGE = +15V to 0V WF4 Erec Reverse Recovery Energy of the Diode — 845 — μJ TJ = 175°C 17, 18, 19 trr Diode Reverse Recovery Time — 115 — ns VCC = 400V, IF = 48A 20, 21 Irr Peak Reverse Recovery Current — 40 — A VGE = 15V, Rg = 10Ω, L =200μH, Ls = 150nH WF3 Conditions

/G32/G32/G32/G32/G32/G32/G32/G32/G51/G32/G32/G32/G32/G119/G119/G119/G46/G105/G114/G102/G46/G99/G111/G109/G32/G32/G32/G32/G32/G32/G169/G32/G50/G48/G49/G51/G32/G73/G110/G116/G101/G114/G110/G97/G116/G105/G111/G110/G97/G108/G32/G82/G101/G99/G116/G105/G102/G105/G101/G114 /G77/G97/G114/G99/G104/G32/G49/G53/G44/G32/G50/G48/G49/G51 /G73/G82/G71/G80/G52/G48/G54/G51/G68/G80/G98/G70/G47/G73/G82/G71/G80/G52/G48/G54/G51/G68/G45/G69/G80/G98/G70 Fig. 1 - Maximum DC Collector Current vs. Case Temperature Fig. 2 - Power Dissipation vs. Case Temperature Fig. 3 - Forward SOA TC = 25°C, TJ ≤ 175°C; VGE =15V Fig. 4 - Reverse Bias SOA TJ = 175°C; VGE =15V Fig. 5 - Typ. IGBT Output Characteristics TJ = -40°C; tp = 80μs Fig. 6 - Typ. IGBT Output Characteristics TJ = 25°C; tp = 80μs 0 2 4 6 8 10 VCE (V) 100 120 140 160 180 200 ICE (A) VGE = 18V VGE = 15V VGE = 12V VGE = 10V VGE = 8.0V 0 2 4 6 8 10 VCE (V) 100 120 140 160 180 200 ICE (A) VGE = 18V VGE = 15V VGE = 12V VGE = 10V VGE = 8.0V 0 25 50 75 100 125 150 175 200 TC (°C) 100 IC (A) 0 25 50 75 100 125 150 175 200 TC (°C) 100 150 200 250 300 350 Ptot (W 10 100 1000 VCE (V) 100 1000 IC (A) 1 10 100 1000 VCE (V) 0.1 100 1000 IC (A) 1msec 10μsec 100μsec Tc = 25°C Tj = 175°C Single Pulse DC

/G32/G32/G32/G32/G32/G32/G32/G32/G52/G32/G32/G32/G32/G119/G119/G119/G46/G105/G114/G102/G46/G99/G111/G109/G32/G32/G32/G32/G32/G32/G169/G32/G50/G48/G49/G51/G32/G73/G110/G116/G101/G114/G110/G97/G116/G105/G111/G110/G97/G108/G32/G82/G101/G99/G116/G105/G102/G105/G101/G114 /G77/G97/G114/G99/G104/G32/G49/G53/G44/G32/G50/G48/G49/G51 /G73/G82/G71/G80/G52/G48/G54/G51/G68/G80/G98/G70/G47/G73/G82/G71/G80/G52/G48/G54/G51/G68/G45/G69/G80/G98/G70 Fig. 7 - Typ. IGBT Output Characteristics TJ = 175°C; tp = 80μs Fig. 8 - Typ. Diode Forward Characteristics tp = 80μs Fig. 10 - Typical VCE vs. VGE TJ = 25°C Fig. 11 - Typical VCE vs. VGE TJ = 175°C Fig. 12 - Typ. Transfer Characteristics VCE = 50V; tp = 10μs Fig. 9 - Typical VCE vs. VGE TJ = -40°C 0 2 4 6 8 10 VCE (V) 100 120 140 160 180 200 ICE (A) VGE = 18V VGE = 15V VGE = 12V VGE = 10V VGE = 8.0V VF (V) 100 120 140 160 180 200 IF (A) -40°c 25°C 175°C 5 1 01 52 0 VGE (V) VCE (V) ICE = 24A ICE = 48A ICE = 96A 5 1 01 52 0 VGE (V) VCE (V) ICE = 24A ICE = 48A ICE = 96A 5 1 01 52 0 VGE (V) VCE (V) ICE = 24A ICE = 48A ICE = 96A 0 5 10 15 VGE (V) 100 120 140 160 180 200 ICE (A) TJ = 25°C TJ = 175°C

/G32/G32/G32/G32/G32/G32/G32/G32/G53/G32/G32/G32/G32/G119/G119/G119/G46/G105/G114/G102/G46/G99/G111/G109/G32/G32/G32/G32/G32/G32/G169/G32/G50/G48/G49/G51/G32/G73/G110/G116/G101/G114/G110/G97/G116/G105/G111/G110/G97/G108/G32/G82/G101/G99/G116/G105/G102/G105/G101/G114 /G77/G97/G114/G99/G104/G32/G49/G53/G44/G32/G50/G48/G49/G51 /G73/G82/G71/G80/G52/G48/G54/G51/G68/G80/G98/G70/G47/G73/G82/G71/G80/G52/G48/G54/G51/G68/G45/G69/G80/G98/G70 Fig. 13 - Typ. Energy Loss vs. IC TJ = 175°C; L = 200μH; VCE = 400V, RG = 10Ω; VGE = 15V Fig. 14 - Typ. Switching Time vs. IC TJ = 175°C; L = 200μH; VCE = 400V, RG = 10Ω; VGE = 15V Fig. 15 - Typ. Energy Loss vs. RG TJ = 175°C; L = 200μH; VCE = 400V, ICE = 48A; VGE = 15V Fig. 16 - Typ. Switching Time vs. RG TJ = 175°C; L = 200μH; VCE = 400V, ICE = 48A; VGE = 15V Fig. 17 - Typ. Diode IRR vs. IF TJ = 175°C Fig. 18 - Typ. Diode IRR vs. RG TJ = 175°C 0 20 40 60 80 100 IC (A) 100 1000 Swiching Tim e (ns) tR tdOFF tF tdON 0 25 50 75 100 125 Rg (Ω) 1000 1500 2000 2500 3000 3500 4000 4500 5000 Energy (μJ) EOFF EON 0 25 50 75 100 125 RG (Ω) 100 1000 Swiching Tim e (ns) tR tdOFF tF tdON 0 20 40 60 80 100 IF (A) IRR (A) RG = 10Ω RG = 22Ω RG = 47Ω RG = 100Ω 0 25 50 75 100 125 RG (Ω) IRR (A) 0 50 100 150 IC (A) 1000 2000 3000 4000 5000 6000 Energy (μJ) EOFF EON

/G32/G32/G32/G32/G32/G32/G32/G32/G54/G32/G32/G32/G32/G119/G119/G119/G46/G105/G114/G102/G46/G99/G111/G109/G32/G32/G32/G32/G32/G32/G169/G32/G50/G48/G49/G51/G32/G73/G110/G116/G101/G114/G110/G97/G116/G105/G111/G110/G97/G108/G32/G82/G101/G99/G116/G105/G102/G105/G101/G114 /G77/G97/G114/G99/G104/G32/G49/G53/G44/G32/G50/G48/G49/G51 /G73/G82/G71/G80/G52/G48/G54/G51/G68/G80/G98/G70/G47/G73/G82/G71/G80/G52/G48/G54/G51/G68/G45/G69/G80/G98/G70 Fig. 19 - Typ. Diode IRR vs. diF/dt VCC = 400V; VGE = 15V; IF = 48A; TJ = 175°C Fig. 20 - Typ. Diode QRR vs. diF/dt VCC = 400V; VGE = 15V; TJ = 175°C Fig. 23 - Typ. Capacitance vs. VCE VGE= 0V; f = 1MHz Fig. 24 - Typical Gate Charge vs. VGE ICE = 48A; L = 600μH Fig. 21 - Typ. Diode ERR vs. IF TJ = 175°C Fig. 22 - VGE vs. Short Circuit Time VCC = 400V; TC = 25°C 0 200 400 600 800 1000 diF /dt (A/μs) IRR (A) 0 20 40 60 80 100 IF (A) 100 200 300 400 500 600 700 800 900 Energy (μJ) RG = 10Ω RG = 22Ω RG = 47Ω RG = 100Ω 8 1 01 21 41 61 8 VGE (V) Tim e (μs) 100 150 200 250 300 350 400 Current (A) 0 20 40 60 80 100 VCE (V) 100 1000 10000 Capacitance (pF) Cies Coes Cres 0 2 55 07 5 1 0 0 Q G, Total Gate Charge (nC) VGE, Gate-to-Em itter Voltage (V) VCES = 300V VCES = 400V 0 500 1000 1500 diF /dt (A/μs) 1000 1500 2000 2500 3000 3500 4000 QRR (nC) 10Ω 22Ω 100Ω 47Ω 48A 24A 96A

/G32/G32/G32/G32/G32/G32/G32/G32/G55/G32/G32/G32/G32/G119/G119/G119/G46/G105/G114/G102/G46/G99/G111/G109/G32/G32/G32/G32/G32/G32/G169/G32/G50/G48/G49/G51/G32/G73/G110/G116/G101/G114/G110/G97/G116/G105/G111/G110/G97/G108/G32/G82/G101/G99/G116/G105/G102/G105/G101/G114 /G77/G97/G114/G99/G104/G32/G49/G53/G44/G32/G50/G48/G49/G51 /G73/G82/G71/G80/G52/G48/G54/G51/G68/G80/G98/G70/G47/G73/G82/G71/G80/G52/G48/G54/G51/G68/G45/G69/G80/G98/G70 Fig. 26. Maximum Transient Thermal Impedance, Junction-to-Case (DIODE) Fig 25. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT) 1E-006 1E-005 0.0001 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) 0.0001 0.001 0.01 0.1 Therm al Response ( Z thJC ) 0.20 0.10 D = 0.50 0.02 0.01 0.05 SINGLE PULSE ( THERMAL RESPONSE ) Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc Ri (°C/W) τi (sec) 0.0872 0.000114 0.1599 0.001520 0.2020 0.020330 τJ τJ τ τC Ci i/Ri Ci= τi/Ri 1E-006 1E-005 0.0001 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) 0.0001 0.001 0.01 0.1 Therm al Response ( Z thJC ) 0.20 0.10 D = 0.50 0.02 0.01 0.05 SINGLE PULSE ( THERMAL RESPONSE ) Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc Ri (°C/W) τi (sec) 0.2774 0.000908 0.3896 0.003869 0.2540 0.030195 τJ τJ τ τC Ci i/Ri Ci= τi/Ri

/G32/G32/G32/G32/G32/G32/G32/G32/G56/G32/G32/G32/G32/G119/G119/G119/G46/G105/G114/G102/G46/G99/G111/G109/G32/G32/G32/G32/G32/G32/G169/G32/G50/G48/G49/G51/G32/G73/G110/G116/G101/G114/G110/G97/G116/G105/G111/G110/G97/G108/G32/G82/G101/G99/G116/G105/G102/G105/G101/G114 /G77/G97/G114/G99/G104/G32/G49/G53/G44/G32/G50/G48/G49/G51 /G73/G82/G71/G80/G52/G48/G54/G51/G68/G80/G98/G70/G47/G73/G82/G71/G80/G52/G48/G54/G51/G68/G45/G69/G80/G98/G70 VCCDUT L L Rg 80 V DUT VCC Fig.C.T.5 - Resistive Load Circuit Rg VCCDUT R = VCC ICM G force C sens e 100K DUT 0.0075μF D1 22K E force C force E sense Fig.C.T.6 - BVCES Filter Circuit L Rg VCCDUT / DRIVER diode clamp / DUT -5V DC DUT VCC RSH

/G32/G32/G32/G32/G32/G32/G32/G32/G57/G32/G32/G32/G32/G119/G119/G119/G46/G105/G114/G102/G46/G99/G111/G109/G32/G32/G32/G32/G32/G32/G169/G32/G50/G48/G49/G51/G32/G73/G110/G116/G101/G114/G110/G97/G116/G105/G111/G110/G97/G108/G32/G82/G101/G99/G116/G105/G102/G105/G101/G114 /G77/G97/G114/G99/G104/G32/G49/G53/G44/G32/G50/G48/G49/G51 /G73/G82/G71/G80/G52/G48/G54/G51/G68/G80/G98/G70/G47/G73/G82/G71/G80/G52/G48/G54/G51/G68/G45/G69/G80/G98/G70 Fig. WF3 - Typ. Diode Recovery Waveform @ TJ = 175°C using Fig. CT.4 Fig. WF1 - Typ. Turn-off Loss Waveform @ TJ = 175°C using Fig. CT.4 Fig. WF2 - Typ. Turn-on Loss Waveform @ TJ = 175°C using Fig. CT.4 Fig. WF4 - Typ. S.C. Waveform @ TJ = 25°C using Fig. CT.3 -40 -30 -20 -10 time (μS) IRR (A) Peak IRR QRR tRR 10% Peak IRR -100 100 200 300 400 500 600 -5.00 0.00 5.00 10.00 time (μS) VCE (V) -100 100 200 300 400 500 600 ICE (A) VCE ICE -100 100 200 300 400 500 600 700 -0.40 0.10 0.60 1.10 Time(μs) VCE (V) -20 100 120 140 ICE (A) EOFF Loss 5% VCE 5% ICE 90% ICE tf -100 100 200 300 400 500 600 700 Time (μs) VCE (V) -20 100 120 140 ICE (A) EON TEST CURRENT 90% test 10% test current 5% VCE tr

/G32/G32/G32/G32/G32/G32/G32/G32/G49/G48/G32/G32/G32/G32/G119/G119/G119/G46/G105/G114/G102/G46/G99/G111/G109/G32/G32/G32/G32/G32/G32/G169/G32/G50/G48/G49/G51/G32/G73/G110/G116/G101/G114/G110/G97/G116/G105/G111/G110/G97/G108/G32/G82/G101/G99/G116/G105/G102/G105/G101/G114 /G77/G97/G114/G99/G104/G32/G49/G53/G44/G32/G50/G48/G49/G51 /G73/G82/G71/G80/G52/G48/G54/G51/G68/G80/G98/G70/G47/G73/G82/G71/G80/G52/G48/G54/G51/G68/G45/G69/G80/G98/G70 TO-247AC package is not recommended for Surface Mount Application. /G84/G79/G45/G50/G52/G55/G65/G67/G32/G80/G97/G114/G116/G32/G77/G97/G114/G107/G105/G110/G103/G32/G73/G110/G102/G111/G114/G109/G97/G116/G105/G111/G110 /G84/G79/G45/G50/G52/G55/G65/G67/G32 /G80/G97/G99/G107/G97/G103/G101/G32 /G79/G117/G116/G108/G105/G110/G101 /G68/G105/G109/G101/G110/G115/G105/G111/G110/G115/G32 /G97/G114/G101/G32 /G115/G104/G111/G119/G110/G32 /G105/G110/G32 /G109/G105/G108/G108/G105/G109/G101/G116/G101/G114/G115/G32 /G40/G105/G110/G99/G104/G101/G115/G41 YEAR 1 = 2001 DAT E CODE PART NUMBER INTERNA TIO NA L LO G O REC TIFIER AS S E MB L Y 56 57 IRFPE30 135H LINE H indicates "L ead-F r ee" WE E K 35LO T C O DE IN THE A SSEM BLY LINE "H" AS S E MB L E D ON WW 35, 2001 Note : "P" in a ssembly line position EXA M PLE: WIT H AS S E MB L Y THIS IS A N IRFPE30 LOT CODE 5657 /G78/G111/G116/G101/G58/G32/G70/G111/G114/G32/G116/G104/G101/G32/G109/G111/G115/G116/G32/G99/G117/G114/G114/G101/G110/G116/G32/G100/G114/G97/G119/G105/G110/G103/G32/G112/G108/G101/G97/G115/G101/G32/G114/G101/G102/G101/G114/G32/G116/G111/G32/G73/G82/G32/G119/G101/G98/G115/G105/G116/G101/G32/G97/G116/G32/G104/G116/G116/G112/G58/G47/G47/G119/G119/G119/G46/G105/G114/G102/G46/G99/G111/G109/G47/G112/G97/G99/G107/G97/G103/G101/G47

/G32/G32/G32/G32/G32/G32/G32/G32/G49/G49/G32/G32/G32/G32/G119/G119/G119/G46/G105/G114/G102/G46/G99/G111/G109/G32/G32/G32/G32/G32/G32/G169/G32/G50/G48/G49/G51/G32/G73/G110/G116/G101/G114/G110/G97/G116/G105/G111/G110/G97/G108/G32/G82/G101/G99/G116/G105/G102/G105/G101/G114 /G77/G97/G114/G99/G104/G32/G49/G53/G44/G32/G50/G48/G49/G51 /G73/G82/G71/G80/G52/G48/G54/G51/G68/G80/G98/G70/G47/G73/G82/G71/G80/G52/G48/G54/G51/G68/G45/G69/G80/G98/G70 Data and specifications subject to change without notice. This product has been designed and qualified for Industrial market. Qualification Standards can be found on IR’s Web site. /G78/G111/G116/G101/G58/G32/G70/G111/G114/G32/G116/G104/G101/G32/G109/G111/G115/G116/G32/G99/G117/G114/G114/G101/G110/G116/G32/G100/G114/G97/G119/G105/G110/G103/G32/G112/G108/G101/G97/G115/G101/G32/G114/G101/G102/G101/G114/G32/G116/G111/G32/G73/G82/G32/G119/G101/G98/G115/G105/G116/G101/G32/G97/G116/G32/G104/G116/G116/G112/G58/G47/G47/G119/G119/G119/G46/G105/G114/G102/G46/G99/G111/G109/G47/G112/G97/G99/G107/G97/G103/G101/G47 IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd.., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. /G84/G79/G45/G50/G52/G55/G65/G68/G32 /G80/G97/G99/G107/G97/G103/G101/G32 /G79/G117/G116/G108/G105/G110/G101 /G68/G105/G109/G101/G110/G115/G105/G111/G110/G115/G32 /G97/G114/G101/G32 /G115/G104/G111/G119/G110/G32 /G105/G110/G32 /G109/G105/G108/G108/G105/G109/G101/G116/G101/G114/G115/G32 /G40/G105/G110/G99/G104/G101/G115/G41 /G84/G79/G45/G50/G52/G55/G65/G68/G32/G80/G97/G114/G116/G32/G77/G97/G114/G107/G105/G110/G103/G32/G73/G110/G102/G111/G114/G109/G97/G116/G105/G111/G110 A SSEMBLY YEAR 0 = 2000 AS SEMB LED ON WW 35, 2000 IN T H E AS S E M B L Y L IN E "H " E X AM P L E : T H IS IS AN IR G P 30 B 12 0 K D -E LOT CODE 5657 WI TH A SSEMBLY PA RT NUMBER DATE CODE IN T E R N AT IO N AL R E C T IF IE R LOGO 035H 5 6 5 7 WEEK 35 LI NE H LOT CODEN ote: "P " in as s em bly line pos ition indicates "Lead-F ree" TO-247AD package is not recommended for Surface Mount Application.