GP28S50 ETC1 | Alldatasheet

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POWER F IELD E FFECT T RANSISTOR 2015/5/20 Rev1.2 Greatpower Microelectronic Corp. Page 1 GENERAL DESCRIPTION FEATURES This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy efficient design also offers a drain-to-source diode with a fast recovery time. Designed for high voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional and safety margin against unexpected voltage transients.  Robust High Voltage Termination  Avalanche Energy Specified  Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode  Diode is Characterized for Use in Bridge Circuits  IDSS and VDS(on) Specified at Elevated Temperature  Isolated Mounting Hole Reduces Mounting Hardware PIN CONFIGURATION SYMBOL TO-220/TO-220F Top View 1 2 3 G A TED R A INS O U R C E TO-3P/T-O247 Top View 1 2 3 GATE DRAINSOURCE D S G N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS Rating Symbol Value Unit Drain to Current － Continuous － Pul sed ID (1) IDM A Gate-to-Source Voltage － Continue VGS ±20 V Total Power Dissipation – TO220 – TO220FP –TO3P –TO247 Derate above 25 ℃ – TO220 – TO220FP –TO3P –TO247 PD 245 255 227 1.96 0.33 2.04 1.82 W W/℃ Junction and Storage Temperature Range TJ, TSTG -55 to 150 ℃ Single Pulse Drain-to-Source Avalanche Energy － T J = 25℃ (VDD = 100V, VGS = 10V, IL = 8A, L = 10mH, RG = 25Ω) EAS 320 mJ Thermal Resistance － Junction to Case -TO220 － Junction to Case -TO220FP － Juncti on to Case -TO3P － Junction to Case -TO247 － Junction to Ambient -TO220, TO220FP － Junction to Ambient -TO3P ,TO247 θJC θJA 0.51 0.49 0.55 62.5 ℃/W Maximum Lead Temperature for Soldering Purposes, 1/8” from case for 10 seconds TL 260 ℃ (1) Drain current limited by maximum junction temperature

POWER F IELD E FFECT T RANSISTOR 2015/5/20 Rev1.2 Greatpower Microelectronic Corp. Page 2

ORDERING INFORMATION

Part Number TOP MARK Part Number Packing Mthod Note GP28S50XN220 (Note1) GP28S50X TO-220 Tube GP28S50XN220FP (Notte1) GP28S50X TO-220FP Tube GP28S50XN3P (Notte2) GP28S50X TO-3P Tube GP28S50XN247 (Notte2) GP28S50X TO-247 Tube GP28S50GN220 (Note2) GP28S50G TO-220 Tube GP28S50GN220FP (Notte2) GP28S50G TO-220FP Tube GP28S50GN3P (Notte2) GP28S50G TO-3P Tube GP28S50GN247 (Notte2) GP28S50G TO-247 Tube Note1: X : Suffix for Halogen Free Product, Note2: G : Suffix for PB Free Product,

ELECTRICAL CHARACTERISTICS

Unless otherwise specified, TJ = 25℃. GP28S50 Characteristic Symbol Min Typ Max Units Drain-Source Breakdown Voltage (V GS = 0 V, ID = 250 μA) V(BR)DSS 500 V Drain-Source Leakage Current (VDS =500 V, VGS = 0 V) IDSS 1 uA Gate-Source Leakage Current-Forward (V gsf = 20 V, VDS = 0 V) IGSSF 100 nA Gate-Source Leakage Current-Reverse (V gsr = - 20 V, VDS = 0 V) IGSSR 100 nA Gate Threshold Voltage (V DS = VGS, ID = 250 μA) VGS(th) 2 3 4 V Static Drain-Source On-Resistance (VGS = 10 V, ID = 15A) * RDS(on) 125 mΩ Gate resistance (f=1MHz, open drain) RG 2.7 Ω Input Capacitance Ciss 1517.7 pF Output Capacitance Coss 1766.7 pF Reverse Transfer Capacitance (VDS = 25 V, VGS = 0 V, f = 1.0 MHz) Crss 50.3 pF Turn-On Delay Time td(on) 34.9 ns Rise Time tr 104.5 ns Turn-Off Delay Time td(off) 97.4 ns Fall Time (VDD = 250 V, ID = 20 A, RG = 25Ω) * tf 65.0 ns Total Gate Charge Qg 40.7 nC Gate-Source Charge Qgs 10.1 nC Gate-Drain Charge (VDS = 400 V, ID = 20 A, VGS = 10 V)* Qgd 18.7 nC SOURCE-DRAIN DIODE CHARACTERISTICS Forward On-Voltage(1) VSD 1.5 V Forward Turn-On Time ton ** ns Reverse Recovery Time (IS = 20 A, dIS/dt = 100A/μs) trr 741 ns * Pulse Test: Pulse Width ≦300μs, Duty Cycle ≦2% ** Negligible, Dominated by circuit inductance

POWER F IELD E FFECT T RANSISTOR 2015/5/20 Rev1.2 Greatpower Microelectronic Corp. Page 3 TYPICAL ELECTRICAL CHARACTERISTICS 0. 2 0. 4 0. 6 0. 8 1. 2 1. 4 1. 6 1. 8 2. 2 2. 4 2. 6 2. 8 -50 -25 0 25 50 75 100 125 150 TJ, Junction Tem perature (C) Rdson (Norm alized) 0.8 1.2 -50 -25 0 25 50 75 100 125 150 TJ, Junction Tem perature (C) BVD (Norm alized) Fig 1. On-ResistanceVariation withvs. Fig.2 Breakdown Voltage Variation vs. Temperature Temperature 0. 0001 0. 001 0. 01 0. 1 100 VDS, Dr ai n- t o- Sour ce Vol t age [ V] I D, Dr ai n- t o- Sour ce cur r ent [ A] 10V 7. 5V 5. 5V 4. 5V 20us PULSE WI DTH TJ=25C 150C 25C Fig 3. Typical Output Characteristics Fig 4. TypicalTransfer Characteristics

POWER F IELD E FFECT T RANSISTOR 2015/5/20 Rev1.2 Greatpower Microelectronic Corp. Page 4 Coss Ci ss Crss Fig 5. Typical Capacitance Vs. Fig 6. Typical Gate Charge Vs. Drain-to-Source Voltage Gate-to-Source Voltage

POWER F IELD E FFECT T RANSISTOR 2015/5/20 Rev1.2 Greatpower Microelectronic Corp. Page 5 PACKAGE DIMENSION TO-220 TO-220FP

POWER F IELD E FFECT T RANSISTOR 2015/5/20 Rev1.2 Greatpower Microelectronic Corp. Page 6 TO -3P

POWER F IELD E FFECT T RANSISTOR 2015/5/20 Rev1.2 Greatpower Microelectronic Corp. Page 7 TO -247

POWER F IELD E FFECT T RANSISTOR 2015/5/20 Rev1.2 Greatpower Microelectronic Corp. Page 8 IMPORTANT NOTICE Great Power Microelectronic Corporation (GP) reserves the right to make changes to its products or to discontinue any integrated circuit product or service without notice, and advises its customers to obtain the latest version of relevant information to verify, before placing orders, that the information being relied on is current. A few applications using integrated circuit products may involve potential risks of death, personal injury, or severe property or environmental damage. GP integrated circuit products are not designed, intended, authorized, or warranted to be suitable for use in life -support applications, devices or systems or other critical applications. Use of GP products in such applications is understood to be fully at the risk of the customer. In order to minimize risks associated with the customer’s applications, the customer should provide adequate design and operating safeguards. 虹冠電子工業股份有限公司 深圳市冠顺微电子股份有限公司 Champion Microelectronic Corporation Shenzhen Great Power Co.,Ltd Web:http://www.champion-micro.com/ Web:http:// www.greatpowermicro.com 臺灣 深圳 新北市汐止區新台五路一段 96 號 21F 21F., No. 96, Sec. 1, Sintai 5th Rd., Sijhih City, Taipei County 22102, Taiwan, R.O.C. 深圳市福田区深南大道 7002 号财富广场 A座 4V, 4V, Tower A, Fortune Plaza, No. 7002, Shennan Road, Futian District, Shenzhen City, China PC : 518040 TEL: +886-2-2696 3558 TEL: +86-755-83709176 FAX: +886-2-2696 3559 FAX: +86-755-83709276