GP07N120

SGP07N120 INFINEON | Alldatasheet

Document overview

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Technical content

Power Semiconductors 1J u l - 0 2 Fast IGBT in NPT-technology

• 40lower Eoff compared to previous generation
• Short circuit withstand time – 10 µs
• Designed for: - Motor controls - Inverter - SMPS
• NPT-Technology offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour - parallel switching capability
• Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/ Type VCE IC Eoff Tj Package Ordering Code SGP07N120 1200V 8A 0.7mJ 150°C TO-220AB Q67040-S4272 SGB07N120 TO-263AB(D2PAK) Q67040-S4273 Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage VCE 1200 V DC collector current TC = 25°C TC = 100°C IC 16.5 7.9 Pulsed collector current, tp limited by Tjmax ICpuls 27 Turn off safe operating area VCE ≤ 1200V, Tj ≤ 150°C - 27 A Gate-emitter voltage VGE ±20 V Avalanche energy, single pulse IC = 8A, VCC = 50V, RGE = 25Ω , start at Tj = 25°C EAS 40 mJ Short circuit withstand time1) VGE = 15V, 100V ≤ VCC ≤ 1200V, Tj ≤ 150°C tSC 10 µs Power dissipation TC = 25°C Ptot 125 W Operating junction and storage temperature Tj , Tstg -55...+150 Soldering temperature, 1.6mm (0.063 in.) from case for 10s - 260 1) Allowed number of short circuits: <1000; time between short circuits: >1s. G C E P-TO-220-3-1 (TO-220AB) P-TO-263-3-2 (D²-PAK) (TO-263AB)

Power Semiconductors 2J u l - 0 2 Thermal Resistance Parameter Symbol Conditions Max. Value Unit Characteristic IGBT thermal resistance, junction – case RthJC 1 Thermal resistance, junction – ambient RthJA TO-220AB 62 SMD version, device on PCB1) RthJA TO-263AB(D2PAK) 40 K/W Electrical Characteristic, at Tj = 25 °C, unless otherwise specified Value Parameter Symbol Conditions min. typ. max. Unit Static Characteristic Collector-emitter breakdown voltage V(BR)CES VGE =0V, IC =500 µ A 1200 - - Collector-emitter saturation voltage VCE(sat) VGE = 15V, IC =8A Tj =25 °C Tj =150 °C 2.5 3.1 3.7 3.6 4.3 Gate-emitter threshold voltage VGE(th) IC =350 µ A, VCE =VGE 345 V Zero gate voltage collector current ICES VCE =1200V,V GE =0V Tj =25 °C Tj =150 °C 100 400 µA Gate-emitter leakage current IGES VCE =0V, VGE =20V - - 100 nA Transconductance gfs VCE =20V, IC =8A 6 - S Dynamic Characteristic Input capacitance Ciss - 720 870 Output capacitance Coss -6 0 7 5 Reverse transfer capacitance Crss VCE =25V, VGE =0V, f=1MHz -4 0 5 0 pF Gate charge QGate VCC =960V, IC =8A VGE =15V -7 0 9 0 n C Internal emitter inductance measured 5mm (0.197 in.) from case LE TO-220AB - 7 - nH Short circuit collector current2) IC(SC) VGE =15V, tSC ≤ 10 µ s 100V ≤ VCC ≤ 1200V, Tj ≤ 150 °C -7 5- A 1) Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70µm thick) copper area for collector connection. PCB is vertical without blown air. 2) Allowed number of short circuits: <1000; time between short circuits: >1s.

Power Semiconductors 3J u l - 0 2 Switching Characteristic, Inductive Load, at Tj=25 °C Value Parameter Symbol Conditions min. typ. max. Unit IGBT Characteristic Turn-on delay time td(on) -2 7 3 5 Rise time tr -2 9 3 8 Turn-off delay time td(off) - 440 570 Fall time tf -2 1 2 7 ns Turn-on energy Eon -0 . 6 0 . 8 Turn-off energy Eoff - 0.4 0.55 Total switching energy Ets Tj =25 °C, VCC =800V, IC =8A, VGE =15V/0V, RG =47 Ω , Lσ 1) =180nH, Cσ 1) =40pF Energy losses include “tail” and diode reverse recovery. - 1.0 1.35 mJ Switching Characteristic, Inductive Load, at Tj=150 °C Value Parameter Symbol Conditions min. typ. max. Unit IGBT Characteristic Turn-on delay time td(on) -3 0 3 6 Rise time tr -2 6 3 1 Turn-off delay time td(off) - 490 590 Fall time tf -3 0 3 6 ns Turn-on energy Eon -1 . 0 1 . 2 Turn-off energy Eoff -0 . 7 0 . 9 Total switching energy Ets Tj =150 °C VCC =800V, IC =8A, VGE =15V/0V, RG =47 Ω , Lσ 1) =180nH, Cσ 1) =40pF Energy losses include “tail” and diode reverse recovery. -1 . 7 2 . 1 mJ 1) Leakage inductance Lσ and stray capacity Cσ due to dynamic test circuit in figure E.

Power Semiconductors 9J u l - 0 2 dimensions symbol [mm] [inch] min max min max A 9.70 10.30 0.3819 0.4055 B 14.88 15.95 0.5858 0.6280 C 0.65 0.86 0.0256 0.0339 D 3.55 3.89 0.1398 0.1531 E 2.60 3.00 0.1024 0.1181 F 6.00 6.80 0.2362 0.2677 G 13.00 14.00 0.5118 0.5512 H 4.35 4.75 0.1713 0.1870 K 0.38 0.65 0.0150 0.0256 L 0.95 1.32 0.0374 0.0520 M 2.54 typ. 0.1 typ. N 4.30 4.50 0.1693 0.1772 P 1.17 1.40 0.0461 0.0551 T 2.30 2.72 0.0906 0.1071 TO-220AB dimensions symbol [mm] [inch] min max min max A 9.80 10.20 0.3858 0.4016 B 0.70 1.30 0.0276 0.0512 C 1.00 1.60 0.0394 0.0630 D 1.03 1.07 0.0406 0.0421 E 2.54 typ. 0.1 typ. F 0.65 0.85 0.0256 0.0335 G 5.08 typ. 0.2 typ. H 4.30 4.50 0.1693 0.1772 K 1.17 1.37 0.0461 0.0539 L 9.05 9.45 0.3563 0.3720 M 2.30 2.50 0.0906 0.0984 N 15 typ. 0.5906 typ. P 0.00 0.20 0.0000 0.0079 Q 4.20 5.20 0.1654 0.2047 R 8° max 8° max S 2.40 3.00 0.0945 0.1181 T 0.40 0.60 0.0157 0.0236 U 10.80 0.4252 V 1.15 0.0453 W 6.23 0.2453 X 4.60 0.1811 Y 9.40 0.3701 TO-263AB (D2Pak) Z 16.15 0.6358

Power Semiconductors 10 Jul-02 Figure A. Definition of switching times I rrm 90% I rrm 10% Irrm di /dt F t rr I F i,v tQ S Q F t S t F V R di /dt rr Q= Q Q rr S F t= t t rr S F Figure C. Definition of diodes switching characteristics p(t) 12 n T( t )j n n τ TC rr r r rr Figure D. Thermal equivalent circuit Figure B. Definition of switching losses Figure E. Dynamic test circuit Leakage inductance Lσ =180nH, and stray capacity Cσ =40pF.

Power Semiconductors 11 Jul-02 Published by Infineon Technologies AG i Gr., Bereich Kommunikation St.-Martin-Strasse 53, D-81541 München © Infineon Technologies AG 1999 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Representatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.