GMZJ4.3

GMZJ2.0 PANJIT | Alldatasheet

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PAGE . 1STAD-SEP.14.2004 .071(1.8) .079(2.0) MICRO-MELF Unit : inch (mm) DATA SHEET retemaraPl obmyS eulaVs tinU 52=bmaTtanoitapissiDrewoP OC PTOT 005W m erutarepmeTnoitcnuJ TJ 571 OC egnaRerutarepmeTegarotS TS 571+ot56- OC .erutarepmettneibmatatpekeraesacmorfmm01foecnatsidatasdaeltahtdedivorpdilaV retemaraPl obmyS. niM. pyT. xaMs tinU riAtneibmAotnoitcnuJecnatsiseRlamrehT RhtA -- -- 3.0W m/K Am001=FItaegatloVdrawroF VF -- -- 1V .erutarepmettneibmatatpekeraesacmorfmm01foecnatsidatasdaeltahtdedivorpdilaV

FEATURES

 Planar Die construction  500mW Power Dissipation  Ideally Suited for Automated Assembly Processes MECHANICAL DATA  Case: Molded Glass MICRO-MELF  Terminals: Solderable per MIL-STD-202E, Method 208  Polarity: See Diagram Below  Approx. Weight: 0.01 grams  Mounting Position: Any  Packing information T/R - 2.5K per 7" plastic Reel GMZJ2.0~GMZJ56 SURFACE MOUNT ZENER DIODES VOLTAGE 2.0 to 56 Volts POWER 500 mWatts MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  Both normal and Pb free product are available : Normal : 80~95% Sn, 5~20% Pb Pb free: 98.5% Sn above

PAGE . 2STAD-SEP.14.2004 rebmuNtraP SSALC VZ @I ZT ZI (m )A RV )V( )Au(RI XAM tzI )Am( ZZT(Ω) XAM IZK (m )A ZZK (Ω) XAMV.niM V.xaM 3.4JZMG A 40.4 92.4 5 0.1 5 5 001 1 0001B 71.4 34.4 C 03.4 75.4 7.4JZMG A 44.4 86.4 5 0.1 5 5 09 1 009B 55.4 08.4 C 86.4 39.4 1.5JZMG A 18.4 70.5 5 5.1 5 5 08 1 008B 49.4 02.5 C 90.5 73.5 6.5JZMG A 82.5 55.5 5 5.2 5 5 06 1 005B 54.5 37.5 C 16.5 19.5 2.6JZMG A 87.5 90.6 5 0.3 5 5 06 1 003B 69.5 72.6 C 21.6 44.6 8.6JZMG A 92.6 36.6 5 5.3 2 5 02 5.0 051B 94.6 38.6 C 66.6 10.7 5.7JZMG A 58.6 22.7 C 92.7 76.7 2.8JZMG A 35.7 29.7 C 30.8 54.8 1.9JZMG A 92.8 37.8 C 38.8 03.9 01JZMG A 21.9 95.9 5 0.7 2.0 5 03 5.0 021 B 14.9 09.9 C 07.9 02.01 D 49.9 44.01 11JZMG A 81.01 17.01 C 28.01 83.11

PAGE . 3STAD-SEP.14.2004 rebmuNtraP SSALC VZ @I ZT ZI (m )A RV )V( )Au(RI XAM tzI )Am( ZZT(Ω) XAM IZK (m )A ZZK (Ω) XAMV.niM V.xaM 21JZMG A 31.11 17.11 C 47.11 53.21 31JZMG A 11.21 57.21 5 01 2.0 5 53 5.0 011B 55.21 12.31 C 99.21 66.31 51JZMG A 44.31 31.41 5 11 2.0 5 04 5.0 011B 98.31 26.41 C 53.41 90.51 61JZMG A 08.41 75.51 5 21 2.0 5 04 5.0 051B 52.51 40.61 C 96.51 15.61 81JZMG A 22.61 60.71 5 31 2.0 5 54 5.0 051B 28.61 07.71 C 24.71 33.81 02JZMG A 20.81 69.81 5 51 2.0 5 55 5.0 002 B 36.81 95.91 C 32.91 22.02 D 27.91 27.02 22JZMG A 51.02 02.12 5 71 2.0 5 03 5.0 002B 46.02 17.12 C 80.12 71.22 D 25.12 36.22 42JZMG A 50.22 81.32 5 91 2.0 5 53 5.0 002B 16.22 77.32 C 21.32 13.42 D 36.32 58.42 72JZMG A 62.42 25.52 5 12 2.0 5 54 5.0 052B 79.42 62.62 C 36.52 59.62 D 92.62 46.72 03JZMG A 99.62 93.82 5 32 2.0 5 55 5.0 052B 07.72 31.92 C 63.82 28.92 D 20.92 15.03 33JZMG A 86.92 22.13 5 52 2.0 5 56 5.0 052B 23.03 88.13 C 09.03 05.23 D 94.13 11.33 63JZMG A 41.23 97.33 5 72 2.0 5 57 5.0 052B 97.23 94.43 C 04.33 31.53 D 10.43 77.53 93JZMG A 86.43 74.63 5 03 2.0 5 58 5.0 052 B 63.53 91.73 C 00.63 58.73 D 36.63 25.83 34JZMG 00.04 00.54 5 33 2.0 5 09 -- -- 74JZMG 00.44 00.94 5 63 2.0 5 09 -- -- 15JZMG 00.84 00.45 5 93 2.0 5 011 -- -- 65JZMG 00.35 00.06 5 34 2.0 5 011 -- --

PAGE . 4STAD-SEP.14.2004 Typical Characteristics (Tamb = 25 °C unless otherwise specified) Fig. 1 Thermal Resistance vs. Lead Length Fig. 2 Total Power Dissipation vs. Ambient Temperature Fig. 3 Typical Change of Working Voltage under Operating Conditions at T amb=25°C 95 9611 0 5 10 15 100 200 300 400 500 R –Therm.Resist. Junction/ Ambient ( K/W)thJA l – Lead Length ( mm ) ll TL=constant 0 40 80 120 160 100 300 400 500 600 P –Total Power Dissipation ( mW )tot Tamb – Ambient Temperature( °C ) 200 95 9602 200 0 5 10 15 20 100 1000 V –VoltageChange ( mV )Z VZ – Z-V oltage(V) 95 9598 IZ=5mA Tj=2 5°C Fig. 4 Typical Change of Working Voltage vs. Junction Temperature Fig. 5 Temperature Coefficient of Vz vs. Z-Voltage Fig. 6 Diode Capacitance vs. Z-Voltage –60 0 60 120 180 0.8 0.9 1.0 1.1 1.2 1.3 V – Relative VoltageChangeZtn Tj – Junction T emperature (°C ) 240 95 9599 VZtn=VZt/VZ(25 °C) TKVZ=10 x 10–4/K 8x1 0–4/K –4 x 10–4/K 6x1 0–4/K 4x1 0–4/K 2x1 0–4/K –2 x 10–4/K 01 02 0 3 0 TK –Temperature Coefficient of V ( 10 /K)VZ VZ – Z-Voltage(V) 95 9600 Z –4 IZ=5mA 0 5 10 15 100 150 200 C – Diode Capacitance ( pF )D VZ – Z-V oltage(V) 95 9601 Tj=2 5°C VR=2 V

PAGE . 5STAD-SEP.14.2004 Fig. 7 Forward Current vs. Forward Voltage Fig. 8 Z-Current vs. Z-Voltage 0 0.2 0.4 0.6 0.8 0.001 0.01 0.1 100 1.0 95 9605 I – Forward Current ( mA)F VF – Forward V oltage(V) Tj=2 5°C 04 81 2 1 6 20 95 9604 100 I – Z-Current ( mA )Z VZ – Z-V oltage(V) Ptot=500mW Tamb=25 °C Fig. 9 Z-Current vs. Z-Voltage Fig. 10 Differential Z-Resistance vs. Z-Voltage 15 20 25 30 I – Z-Current ( mA )Z VZ – Z-Voltage(V) 95 9607 Ptot=500mW Tamb=25 °C 0 5 10 15 20 100 1000 r – Dif ferential Z-Resistance ( Ω )Z VZ – Z-V oltage(V) 95 9606 Tj=2 5°C IZ=1mA 5mA 10mA 100 1000 Z –ThermalResistance for PulseCond.(K/W)thp tp – Pulse Length ( ms )95 9603 10–1 100 101 102 tp/T=0.5 tp/T=0.2 tp/T=0.1 tp/T=0.05 tp/T=0.02 tp/T=0.01 Single Pulse RthJA=300K/W T=Tjma x–Tamb iZM=(–VZ+(VZ2+4rzj T/Zthp)1/2)/(2rzj)x Fig. 11 Thermal Response