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Technical content

27.5 – 31 GHz 9W GaN PA MMIC Product Overview Microchip’s GMICP2731-10 is a Ka Band MMIC power amplifier fabricated using GaN SiC technology. It achieves 39.5 dBm saturated output power from 27.5 – 31 GHz, with 22% PAE and 22 dB small signal gain. The balanced topology provides excellent broadband input and output match to 50Ω and DC blocking capacitors ensure simple integration. Excellent linearity characteristics make GMICP2731-10 well suited to applications in Satellite Communications. The die are 100% DC and RF tested on wafer ensuring compliance to the electrical specifications. Key Features Functional Block Diagram

  • Frequency range: 27.5 – 31 GHz
  • Pout: 39.5 dBm (Pin = 24 dBm)
  • PAE: 22% (Pin = 24 dBm)
  • Small Signal Gain: 22 dB (28 GHz)
  • Return Loss: 15 dB
  • Drain Bias 24V, IDQ = 112 mA – 224 mA
  • Technology: GaN on SiC
  • Lead-free and RoHS compliant
  • Dimensions: 3.025 mm × 3.405 mm × 0.10 mm VG VG VG VDVDVD RF IN RF OUT VG VG VG VDVDVD 50Ω 50Ω

Applications

  • Satellite Communications
  • Aerospace & Defense
  • 5G Typical Performances Parameter Typical Units Conditions1 Frequency range 27.5 – 31 GHz Saturated Output Power, Psat 39.5 dBm Pin = 24 dBm Power Added Efficiency, PAE 22 % Pin = 24 dBm Small Signal Gain, S21 22 dB Input Return Loss –15 dB Output Return Loss –15 dB Note: 1. Test conditions unless otherwise stated CW, VD = 24V, IDQ = 110 mA ,VG~ –1.84V typical, TA = 25 ºC © 2021 Microchip Technology Inc. and its subsidiaries Datasheet DS-00004072A-page 1

© 2021 Microchip Technology Inc. and its subsidiaries Datasheet DS-00004072A-page 2

  1. Electrical Specifications

1.1 Typical Electrical Performance

Table 1-1. Electrical Specifications Parameter Min Typical Max Units Conditions(1) Frequency Range 27.5 31 GHz Saturated Output Power, Psat 37 39.5 dBm Pin = 24 dBm Power Added Efficiency, PAE 22 % Pin = 24 dBm Small Signal Gain, S21 22 dB Input Return Loss –15 dB Output Return Loss –15 dB Power Detector Range 20 39 dBm Temperature reference diode provided (1) Test conditions unless otherwise stated CW, VD = 24V, IDQ = 110 mA ,VG~ –1.84V typical, TA = 25 ºC Table 1-2. Recommended Operating Conditions Parameters Value Drain Voltage (VD) 20V – 24V Drain Quiescent Current (IDQ) 100 mA – 224 mA Gate Voltage Range (VG) –2V to –1.5V Operating Temperature (TA) –40 °C to +85 °C

1.2 Absolute Maximum Ratings

Table 1-3. Thermal and Reliability Parameters Value Thermal Resistance 4.9 ºC/W Notes 1. Assumes silver sintered epoxy attach (15 µm thick) mounted on CuMo carrier. 2. Base temperature is assumed at the top of the CuMo carrier 3. Thermal resistance calculated using IR measurement of the channel temperature Table 1-4. Absolute Maximum Ratings Parameters Absolute Maximum Drain Voltage (VDG) 32V Gate Voltage Range (VG –5V to 0V GMICP2731-10 Electrical Specifications © 2021 Microchip Technology Inc. and its subsidiaries Datasheet DS-00004072A-page 3

Parameters Absolute Maximum Drain Current (ID) 3A Gate Current (IG) 6.0 mA CW Power Dissipation (85C) 40W CW Input Power—no instability (4:1 VSWR, VD = 20V, IDQ = 112 mA, 25 °C) +25 dBm CW Input Power—no damage (10:1 VSWR, VD = 20V, IDQ = 112 mA, 25 °C) +25 dBm Channel Temperature 275 °C Eutectic Die Attach Temperature (30s) 320 °C Storage Temperature –65 °C to +150 °C Note: Exceeding any one or combination of these limits may cause permanent damage to this device. ICONIC RF does not recommend sustained operation near these survivability limits.

1.3 Typical RF Performance

1.3.1 Typical Small Signal Performance

Test Conditions (unless otherwise stated): Temp = 25 °C, CW, VD = 24V, ID = 110 mA. Figure 1-1. Gain vs. Temperature @ 20V/110mA 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 S21 (dB) Frequency (GHz) T=25C T=-40C T=85C Figure 1-2. Gain vs. Temperature @ 24V/110mA 02468101214161820222426283032 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 S21 (dB) Frequency (GHz) T=25C T=-40C T=85C GMICP2731-10 Electrical Specifications © 2021 Microchip Technology Inc. and its subsidiaries Datasheet DS-00004072A-page 4

Figure 1-3. S11 vs. Temperature @ 20V/110mA -40 -35 -30 -25 -20 -15 -10 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 S11 (dB) Frequency (GHz) T=25C T=-40C T=85C Figure 1-4. S11 vs. Temperature @ 24V/110mA -40 -35 -30 -25 -20 -15 -10 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 S11 (dB) Frequency (GHz) T=25C T=-40C T=85C Figure 1-5. S22 vs. Temperature @ 20V/110mA -40 -35 -30 -25 -20 -15 -10 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 S22 (dB) Frequency (GHz) T=25CT=-40CT=85C Figure 1-6. S22 vs. Temperature @ 24V/110mA -40 -35 -30 -25 -20 -15 -10 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 S22 (dB) Frequency (GHz) T=25C T=-40C T=85C

1.3.2 Typical Power Performance

Test Conditions (unless otherwise stated): Temp = 25 °C, CW, VD = 24V, ID = 110 mA. GMICP2731-10 Electrical Specifications © 2021 Microchip Technology Inc. and its subsidiaries Datasheet DS-00004072A-page 5

1.3.3 Typical 2-Tones RF Performance

Test Conditions (unless otherwise stated): Temp = 25 °C, VD = 20V, ID = 110 mA, CW Tone spacing of 10 MHz. Figure 1-31. IM3 vs. Pout @ 20V & –40°C -45 -40 -35 -30 -25 -20 -15 -10 18 20 22 24 26 28 30 32 34 36 38 IM3 (dBc) Pout (dBm) Freq (GHz)=27.5 Freq (GHz)=28 Freq (GHz)=28.5 Freq (GHz)=29 Freq (GHz)=29.5 Freq (GHz)=30 Freq (GHz)=30.5 Freq (GHz)=31 Figure 1-32. IM3 vs. Pout @ 24V & –40°C -45 -40 -35 -30 -25 -20 -15 -10 18 20 22 24 26 28 30 32 34 36 38 IM3 (dBc) Pout (dBm) Freq (GHz)=31 Freq (GHz)=30.5 Freq (GHz)=30 Freq (GHz)=29.5 Freq (GHz)=29 Freq (GHz)=28.5 Freq (GHz)=28 Freq (GHz)=27.5 Figure 1-33. IM3 vs. Pout @ 20V & 25°C -45 -40 -35 -30 -25 -20 -15 -10 18 20 22 24 26 28 30 32 34 36 38 IM3 (dBc) Pout (dBm) Freq (GHz)=27.5 Freq (GHz)=28 Freq (GHz)=28.5 Freq (GHz)=29 Freq (GHz)=29.5 Freq (GHz)=30 Freq (GHz)=30.5 Freq (GHz)=31 Figure 1-34. IM3 vs. Pout @ 24V & 25°C -45 -40 -35 -30 -25 -20 -15 -10 18 20 22 24 26 28 30 32 34 36 38 IM3 (dBc) Pout (dBm) Freq (GHz)=31 Freq (GHz)=30.5 Freq (GHz)=30 Freq (GHz)=29.5 Freq (GHz)=29 Freq (GHz)=28.5 Freq (GHz)=28 Freq (GHz)=27.5 GMICP2731-10 Electrical Specifications © 2021 Microchip Technology Inc. and its subsidiaries Datasheet DS-00004072A-page 10

  1. Die Specifications
  • Units: µm
  • Thickness: 100 µm
  • Die size tolerance: ±50 μm
  • Backside is RF and DC ground
  • Amplifier must be biased from both sides (N) North, (S) South Figure 2-1. Die Outline Drawing Table 2-1. I/O Description Pad No Pad Size (µm) Function Description 1 85×170 RFIN DC blocked and 50Ω matched 2 85×85 GND Ground Pad 3 85×85 VG1N Gate voltage, decoupling and bypass caps required 4 85×85 VG2N Gate voltage, decoupling and bypass caps required 5 85×85 VG3N Gate voltage, decoupling and bypass caps required 6 85×85 GND Ground Pad 7 85×85 VD1N & VD2N Drain voltage, decoupling and bypass caps required 8 170×170 VD3N Drain voltage, decoupling and bypass caps required 9 85×85 GND Ground Pad 10 85×170 RFOUT DC blocked and 50Ω matched 11 85×85 VREF Detector reference voltage GMICP2731-10 Die Specifications © 2021 Microchip Technology Inc. and its subsidiaries Datasheet DS-00004072A-page 12

Pad No Pad Size (µm) Function Description 12 85×85 VDET Detector reference voltage 13 85×85 GND Ground Pad 14 170×85 VD3S Drain voltage, decoupling and bypass caps required 15 85×85 GND Drain voltage, decoupling and bypass caps required 16 85×85 GND Ground Pad 17 85×85 VG3S Gate voltage, decoupling and bypass caps required 18 85×85 VG2S Gate voltage, decoupling and bypass caps required 19 85×85 VG1S Gate voltage, decoupling and bypass caps required 20 85×85 GND Ground Pad GMICP2731-10 Die Specifications © 2021 Microchip Technology Inc. and its subsidiaries Datasheet DS-00004072A-page 13

  1. Application Circuits Figure 3-1. Application Circuits Component ID Value Description C1-C8 100 pF 50V ±20% Single Layer Chip Capacitor (500U01A101MT4W) C9-C12 10 nF 100V ±20% Single Layer Chip Capacitor (V30BZ103M1SX) C13-C16 10 nF 50V ±5% 0402 Multilayer Ceramic Capacitor C17-C20 10 µF 35V ±10% 0805 Multilayer Ceramic Capacitor R1, R2 100 kΩ ±5% 0402 Resistor GMICP2731-10 Application Circuits © 2021 Microchip Technology Inc. and its subsidiaries Datasheet DS-00004072A-page 14

Figure 3-2. Assembly Drawing C10 C5 C6 C7 C11 C12 C1 C3 C21 C22 C15 C19 C20 C13 C18C17 C10 C5 C6 C7 C11 C12 C1 C3 C21 C22 C14 C16 DETAIL A - BONDING SCALE 4 : 1 Assembly Guidance Amplifier must be biased from both sides. Optimum RF power performance achieved by minimizing output RF bond wire length. Interconnect assembly notes:

  • Ball bonding is the preferred technique.
  • Force, time, and ultrasonic parameters are critical.
  • Aluminum wire bonding is not recommended.
  • Bond wire diameter of 1 mil is recommended. Die attach of component using adhesive:
  • Vacuum collets are the preferred method of pickup.
  • Pickup method must consider the avoidance of die air bridges.
  • Die suitable for eutectic and epoxy die attach.
  • Where epoxy is used, high thermal conductivity Silver Sintered Epoxy is recommended: – Namics H9890–6 – Kyocera CT2700R7S Reflow Process
  • Maximum temperature 320 ºC for 30 seconds.
  • Material matching for Coefficient of thermal expansion is crucial for long-term reliability Bias-Up Procedure 1. Set VG = –5V 2. Set VD to 20V – 24V 3. Adjust VG positive until ID quiescent is 112 mA 4. Limit ID to 2A 5. Apply RF Signal Bias-down Procedure GMICP2731-10 Application Circuits © 2021 Microchip Technology Inc. and its subsidiaries Datasheet DS-00004072A-page 15
  1. Turn off RF. 2. Turn off VD, allow drain capacitor to discharge. 3. Turn off VG. Handling Procedures Please observe the following precautions to avoid damage: Static Sensitivity Integrated Circuits are sensitive to electrostatic discharge (ESD) and can be damaged by static electricity. Proper ESD control techniques should be used when handling these devices. Class 1A HBM (250V – 500V) ESD Classification is anticipated. GMICP2731-10 Application Circuits © 2021 Microchip Technology Inc. and its subsidiaries Datasheet DS-00004072A-page 16
  1. Ordering, Shipping, and Handling

4.1 Handling Recommendations

Integrated circuits are sensitive to electrostatic discharge (ESD) and can be damaged by static electricity. It is recommended to follow all procedures and guidelines outlined in the Microsemi application note AN01: GaAs MMIC Handling and Die Attach Recommendations.

4.2 Ordering Information

For additional ordering information, contact your Microchip sales representative. Part Number Package Starndard Packing Format GMICP2731-10 Die Gel Pack GMICP2731-10 Ordering, Shipping, and Handling © 2021 Microchip Technology Inc. and its subsidiaries Datasheet DS-00004072A-page 17

  1. Revision History Table 5-1. Revision History Revision Date Description A 06/2021 Document created. GMICP2731-10

Revision History

© 2021 Microchip Technology Inc. and its subsidiaries Datasheet DS-00004072A-page 18

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