GM200HB06BL KEC | Alldatasheet
Document overview
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Technical content
2-PACK IGBT MODULE (Half - Bridge)
FEATURES
hLow VCE(sat) hLow Turn-off loss hShort tail current APPLICATION hMotor Controls hGeneral purpose inverters hServo Controls INTERNAL CIRCUIT 13 0.3+_ 14 0.3+_ 13 0.3+_ 13 0.3+_ 17 0.3+_ 6 0.5 OUTLINE DRAWING Unit : mm 35 0.5+_ 28 0.5+_ 25 0.3+_ 17 0.3+_ 93 0.5+_ 80 0.5+_ 23 0.3+_+_23 0.3 30 0.5+_ 22 0.5+_ +_30 0.5 +_31 0.5 MAXIMUM RATING (@Tc=25 Per Leg, Unless otherwise noted) 1 2 1. C2 /E1 2. E2 3. C1 4. G1 5. E1 6. G2 7. E2 2013. 9. 02 Revision No : 0 CHARACTERISTIC SYMBOL RATING UNIT Collector-to-Emitter Voltage VCES 600 V Gate-Emitter Voltage VGES 20 V Continuous Collector Current @TC=25 IC 265 A @TC=80 200 Pulsed Collector Current * ICP 400 A Diode Continuous Forward Current @TC=25 IF 265 A @TC=80 200 Isolation Voltage test AC @ 1 minute Viso 2500 V Junction Temperature Tj -40 ~ +150 Storage Temperature Tstg -40 ~ +125 Weight Weight 1905 g Mounting Torque (M6) M 5 N.m Terminal Connection torque (M5) M 4 N.m * Half sine wave at 60Hz, peak value.
ELECTRICAL CHARACTERISTICS (IGBT, @Tc=25 Per Leg, Unless otherwise noted) CHARACTERISTIC SYMBOL MIN TYP MAX. UNIT Junction to Case (IGBT Part, Per 1/2 Module) Rth(j-c) - 0.3 - /W Junction to Case (Diode Part, Per 1/2 Module) Rth(j-c) - 0.9 - ELECTRICAL CHARACTERISTICS (DIODE, @Tc=25 Per Leg, Unless otherwise noted) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Static Collector-Emitter Breakdown Voltage BVCES IC = 1mA, VGE=0V 600 - - V Collector Cut-off Current ICES VCE=650V, VGE=0V - - 1 mA Gate Leakage Current IGES VGE=20V -600 - 600 nA Gate Threshold Voltage VGE(th) VCE=VGE, IC=6.6mA 5.5 - 7.7 V Collector-Emitter Saturation Voltage VCE(sat) VGE= 15V, IC=200A - 1.6 2.1 V Internal Gate Resistance RG - - 2.0 - ʃ Dynamic Turn On Delay Time td(on) VCC= 300V, IC=200A, RG=3.3ʃ, VGE=15V, inductive load - 130 - nsRise Time tr - 320 - Turn Off Delay Time td(off) - 120 - Fall Time tf - 50 - Turn-On Switching Loss EON - 8.5 - mJ Turn-Off Switching Loss Eoff - 0.7 - Gate Charge Qge IC = 200A, VCC=400V, VGE=15V - 380 - nC Input Capacitance Cies VCE= 30V, VGE=0V, f=1ʀ - 12.94 - nFOutput Capacitance Coes - 0.65 - Reverse Transfer Capacitance Cres - 0.34 - Short circuit current ISC VCC= 300V, VGE=15V tpsc 10 ɫ - 1100 - A CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Diode Forward Voltage VF IF = 200A, VGE=0V - 1.9 2..3 V Diode Reverse Recovery Charge Qrr IF=200A, VR=300V, di /dt =-900A/ɫ - 2.2 - uQ Diode Peak Reverse Recovery Current Irr - 240 - A 2013. 9. 02 Revision No : 0