GM162 GTM | Alldatasheet

Document overview

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Technical content

Features

&Lower on-resistance &Ultra high-speed switching

Applications

&Notebook PCs &Cellular and portable phones &On-board power supplies &Li-ion battery Systems Package Dimensions A 4.4 4.6 G 3.00 REF. B 4.05 4.25 H 1.50 REF. C 1.50 1.70 I 0.40 0.52 D 1.30 1.50 J 1.40 1.60 E 2.40 2.60 K 0.35 0.41 F 0.89 1.20 L 5q TYP. M 0.70 REF. Absolute Maximum Ratings Parameter Symbol Ratings Unit Drain-Source Voltage VDS -30 V Gate-Source Voltage VGS f12 V Continuous Drain Current3 ID @Ta=25: -3.2 A Continuous Drain Current3 ID @Ta=70: -2.6 A Pulsed Drain Current1,2 IDM -10 A Power Dissipation PD@Ta=25: 2 W Operating Junction and Storage Temperature Range Tj, Tstg -55 ~ +150 Linear Derating Factor 0.01 W/ Thermal Data Parameter Symbol Ratings Unit Thermal Resistance Junction-ambient3 Max. Rthj-amb 90 /W BVDSS -30V RDS(ON) 80m ID -3.2A SOT-89

ISSUED DATE :2004/11/01 REVISED DATE : Electrical Characteristics(Tj = 25 Unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test Conditions Drain-Source Breakdown Voltage BVDSS -30 - - V VGS=0, ID=-250uA Breakdown Voltage Temperature Coefficient æBVDSS/æTj - -0.1 - V/: Reference to 25:, ID=-1mA Gate Threshold Voltage VGS(th) -0.5 - -1.2 V VDS= VGS, ID=-250uA Forward Transconductance gfs - 9 - S VDS=-5.0V ,ID=-3.0A Gate-Source Leakage Current IGSS - - D100 nA VGS= D12V Drain-Source Leakage Current(Tj=25:) - - -1 uA VDS=-30V, VGS=0 Drain-Source Leakage Current(Tj=70:) IDSS - - -25 uA VDS=-24V, VGS=0 - - 60 ID=-3.2A, VGS=-10V - - 80 ID=-3.0A, VGS=-4.5V Static Drain-Source On-Resistance2 RDS(ON) - - 150 mŁ ID=-2.0A, VGS=-2.5V Total Gate Charge2 Qg - 10 18 ID=-3.2A Gate-Source Charge Qgs - 1.8 - nC VDS=-24V Gate-Drain (“Miller”) Change Qgd - 3.6 - VGS=-4.5V Turn-on Delay Time2 Td(on) - 7 - Rise Time Tr - 15 - Turn-off Delay Time Td(off) - 21 - Fall Time Tf - 15 - ns VDS=-15V ID=-3.2A VGS=-10V RG=3.3Ł RD=4.6Ł Input Capacitance Ciss - 735 1325 Output Capacitance Coss - 100 - Reverse Transfer Capacitance Crss - 80 - pF VGS=0V VDS=-25V f=1.0MHz Source-Drain Diode Forward On Voltage2 VSD - - -1.2 V IS=-1.2A, VGS=0 Reverse Recovery Time Trr - 24 - ns Reverse Recovery Charge Qrr - 19 - nC IS=-3.2A, VGS=0 dI/dt=100A/ôs Notes: 1. Pulse width limited by Max. junction temperature. 2. Pulse width 300us, duty cycle 2%. 3. Surface mounted on 1 in2 copper pad of FR4 board;270:/w when mounted on min. copper pad. Characteristics Curve

ISSUED DATE :2004/11/01 REVISED DATE :

ISSUED DATE :2004/11/01 REVISED DATE : Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785 China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165