GM161 GTM | Alldatasheet
Document overview
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- PDF pages: 4
Technical content
Features
&Capable of 2.5V gate drive! &Lower on-resistance &Reliable and Rugged
Applications
&Notebook PCs &Cellular and portable phones &On-board power supplies &Li-ion battery Systems Package Dimensions A 4.4 4.6 G 3.00 REF. B 4.05 4.25 H 1.50 REF. C 1.50 1.70 I 0.40 0.52 D 1.30 1.50 J 1.40 1.60 E 2.40 2.60 K 0.35 0.41 F 0.89 1.20 L 5q TYP. M 0.70 REF. Absolute Maximum Ratings Parameter Symbol Ratings Unit Drain-Source Voltage VDSS 20 V Gate-Source Voltage VGS f12 V Continuous Drain Current3 ,VGS@4.5V ID @Ta=25: 5.3 A Continuous Drain Current3 ,VGS@4.5V ID @Ta=70: 4.3 A Pulsed Drain Current1,2 IDM 10 A Power Dissipation PD@Ta=25: 2 W Operating Junction and Storage Temperature Range Tj, Tstg -55 ~ +150 Linear Derating Factor 0.01 W/ Thermal Data Parameter Symbol Ratings Unit Thermal Resistance Junction-ambient3 Max. Rthj-amb 90 /W BVDSS 20V RDS(ON) 50m ID 5.3A SOT-89 Pb Free Plating Product
ISSUED DATE :2004/11/03 REVISED DATE :2005/07/21B Electrical Characteristics(Tj = 25 Unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test Conditions Drain-Source Breakdown Voltage BVDSS 20 - - V VGS=0, ID=250Ua Breakdown Voltage Temperature Coefficient æBVDSS/æTj - 0.1 - V/: Reference to 25:, ID=1mA Gate Threshold Voltage VGS(th) 0.5 - 1.2 V VDS= VGS, ID=250uA Forward Transconductance gfs - 13 - S VDS=5.0V, ID=5.3A Gate-Source Leakage Current IGSS - - D100 nA VGS= D12V Drain-Source Leakage Current(Tj=25:) - - 1 uA VDS=20V, VGS=0 Drain-Source Leakage Current(Tj=70:) IDSS - - 10 uA VDS=16V, VGS=0 - - 50 VGS=4.5V, ID=2.0A - - 70 VGS=2.5V, ID=2.0A Static Drain-Source On-Resistance RDS(ON) - - 250 mŁ VGS=1.5V, ID=0.5A, Total Gate Charge2 Qg - 8.7 - Gate-Source Charge Qgs - 1.5 - Gate-Drain (“Miller”) Change Qgd - 3.6 - nC ID=5.3A VDS=10V VGS=4.5V Turn-on Delay Time2 Td(on) - 6 - Rise Time Tr - 14 - Turn-off Delay Time Td(off) - 18.4 - Fall Time Tf - 2.8 - ns VDS=15V ID=1A VGS=10V RG=2Ł RD=15Ł Input Capacitance Ciss - 603 - Output Capacitance Coss - 144 - Reverse Transfer Capacitance Crss - 111 - pF VGS=0V VDS=15V f=1.0MHz Source-Drain Diode Forward On Voltage2 VSD - - 1.2 V IS=1.2A, VGS=0 Reverse Recovery Time Trr - 16.8 - ns Reverse Recovery Charge Qrr - 11 - nC IS=5.0A,VGS=0 dI/dt=100A/ôs Notes: 1. Pulse width limited by Max. junction temperature. 2. Pulse width 300us, duty cycle 2%. 3. Surface mounted on 1 in2 copper pad of FR4 board;270:/w when mounted on Min. copper pad. Characteristics Curve
ISSUED DATE :2004/11/03 REVISED DATE :2005/07/21B
ISSUED DATE :2004/11/03 REVISED DATE :2005/07/21B Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785 China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165