GM150HB06BLA KEC | Alldatasheet

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Technical content

2-PACK IGBT MODULE (Half - Bridge)

FEATURES

hLow VCE(sat) hLow Turn-off loss hShort tail current hPositive temperature coefficient h10us Short Circuit Capability hUL Recognized. File No. E305401 APPLICATION hMotor Controls hGeneral purpose inverters hServo Controls INTERNAL CIRCUIT 13 0.3+_ 14 0.3+_ 13 0.3+_ 13 0.3+_ 17 0.3+_ 6 0.5 OUTLINE DRAWING Unit : mm 35 0.5+_ 28 0.5+_ 25 0.3+_ 17 0.3+_ 93 0.5+_ 80 0.5+_ 23 0.3+_+_23 0.3 30 0.5+_ 22 0.5+_ +_30 0.5 +_31 0.5 MAXIMUM RATING (Ta=25) 1 2 1. C2 /E1 2. E2 3. C1 4. G1 5. E1 6. G2 7. E2 2018. 01. 09 Revision No : 1 CHARACTERISTIC SYMBOL RATING UNIT Collector-to-Emitter Voltage VCES 600 V Gate-Emitter Voltage VGES ‚20 V Continuous Collector Current DC IC 150 A Pulsed Collector Current 1ms ICP 300 A Power Dissipation PD 400 W Isolation Voltage test AC @ 1 minute Viso 2500 V Junction Temperature Tj -40 ~ +150  Storage Temperature Tstg -40 ~ +125  Weight Weight 190‚5 g Mounting Torque (M6) M 5 N.m Terminal Connection torque (M5) M 4 N.m

ELECTRICAL CHARACTERISTICS (Ta=25) CHARACTERISTIC SYMBOL Max UNIT Junction to Case (IGBT Part, Per 1/2 Module) Rth(j-c) 0.31 /W Junction to Case (Diode Part, Per 1/2 Module) Rth(j-c) 0.4 2018. 01. 09 Revision No : 1 CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Static Collector-Emitter Breakdown Voltage BVCES VGE=0V , IC=1mA 600 - - V Collector Cut-off Current ICES VGE=0V, VCE=600V - - 1.0 mA Gate Leakage Current IGES VCE=0V, VGE=‚20V - - ‚100 nA Gate Threshold Voltage VGE(th) VGE=VCE, IC=1mA - 5.2 - V Collector-Emitter Saturation Voltage VCE(sat) VGE=15V, IC=150A - 2.0 2.4 V VGE=15V, IC=150A, TC = 125 - 2.4 - V VGE=15V, IC=300A - 3.0 - V Dynamic Total Gate Charge Qg VCE=300V, VGE=‚15V, IC= 150A - 333 - nC Gate-Emitter Charge Qge - 99 - nC Gate-Collector Charge Qgc - 125 - nC Turn-On Delay Time td(on) VCE=300V, IC=150A, VGE=‚15V,RG=10ʃ Inductive Load, TC = 25 - 304 - ns Rise Time tr - 196 - ns Turn-Off Delay Time td(off) - 346 - ns Fall Time tf - 116 - ns Turn-On Switching Loss Eon - 2.8 - mJ Turn-Off Switching Loss Eoff - 8.0 - mJ Total Switching Loss Ets - 10.8 - mJ Turn-On Delay Time td(on) VCE=300V, IC=150A,VGE=‚15V, RG=10ʃ Inductive Load, TC = 125 - 309 - ns Rise Time tr - 201 - ns Turn-Off Delay Time td(off) - 381 - ns Fall Time tf - 120 - ns Turn-On Switching Loss Eon - 3.2 - mJ Turn-Off Switching Loss Eoff - 8.6 - mJ Total Switching Loss Ets - 11.8 - mJ Input Capacitance Cies VCE=30V, VGE=0V, f=1MHz - 7735 - pF Ouput Capacitance Coes - 932 - pF Reverse Transfer Capacitance Cres - 137 - pF Short Circuit Current ISC VCC=300V, VGE=‚15V, tpsc†10us - 632 - A

  1. 01. 09 3/8 GM150HB06BLA Revision No : 1 ELECTRICAL CHARACTERISTIC OF DIODE CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Diode Forward Voltage VF IF = 150A TC=25 - 1.4 1.6 V TC=125 - 1.4 - Diode Reverse Recovery Time trr IF=150A, RG=10ʃ TC=25 - 109 131 ns TC=125 - 149 - Diode Peak Reverse Recovery Current Irr TC=25 - 55 68 A TC=125 - 73 - Diode Reverse Recovery Charge Qrr TC=25 - 3.71 4.45 uC TC=125 - 7.16 -
  1. 01. 09 4/8 GM150HB06BLA Revision No : 1 Fig 1. Saturation Voltage Characteristics Collector - Emitter Voltage VCE (V) Collector - Emitter Voltage VCE (V) Collector - Emitter Voltage VCE (V) Collector Current IC (A) Collector - Emitter Voltage VCE (V) Gate - Emitter Voltage VGE (V) Collector Current IC (A) Fig 2. Saturation Voltage Characteristics Fig 3. Saturation Voltage vs. Case Temperature Fig 4. Saturation Voltage vs. VGE Fig 6. Capacitance Characteristics Capacitance (pF) Collector - Emitter Voltage VCE (V) 02 13 4 5.0 4.0 3.0 2.0 1.0 0.0 25 50 75 100 125 300 240 260 280 180 200 220 120 140 160 100 300 240 260 280 180 200 220 120 140 160 100 TC=25 C Common Emitter Common Emitter VGE = 15V IC = 300A IC = 150A 1 10 100 6000 8000 10000 12000 2000 4000 Cies Coes Cres 01 6 2 0 1284 IC = 150A IC = 100A IC = 300A Common Emitter TC =25 C Collector - Emitter Voltage VCE (V) Gate - Emitter Voltage VGE (V) Fig 5. Saturation Voltage vs. VGE Case Temperature TC ( )C 01 6 2 0 1284 Common Emitter TC =125 C Common Emitter V GE = 0V , f = 1MHZ TC = 25 C Common Emitter V GE = 15V TC = TC = C 125 C VGE = 20V 14V 15V 18V 12V 10V IC = 150A IC = 100A IC = 300A
  1. 01. 09 5/8 GM150HB06BLA Revision No : 1 Collector Current IC (Α) Switching Time (ns) 06 0 30 120 90 150 210 240 270 300180 100 1000 Fig 10. Turn-On Characteristics vs. Collector Current Collector Current IC (Α) Switching Time (ns) Fig 11. Turn-Off Characteristics vs. Collector Current Collector Current IC (Α) Switching Time (ns) Fig 12. Turn-Off Characteristics vs. Collector Current Gate Resistance RG (Ω) Switching Loss (mJ) Fig 9. Switching Loss vs. Gate Resistance 0.1 100

1 Eoff

Fig 7. Turn-On Characteristics vs. Gate Resistance Gate Resistance RG (Ω) Gate Resistance RG (Ω) Switching Time (ns) Switching Time (ns) 0 20 40 60 70 80 90 100 11010 30 50 0 20 40 60 70 80 90 100 110 10 30 50 100 1000 10000 100 10000 1000 tf td(off) Fig 8. Turn-Off Characteristics vs. Gate Resistance 0 20 40 60 70 80 90 100 11010 30 50 0.1 100 Common Emitter VCC = 300V , VGE = 15V IC = 150A TC = TC = C 125 C Common Emitter VCC = 300V , VGE = 15V IC = 150A TC = TC = C 125 C Common Emitter VCC = 300V , VGE = 15V IC = 150A TC = TC = C 125 C tr td(on) tr td(on) Common Emitter VCC = 300V , VGE = 15V RG = 10 TC = TC = C 125 C Ω 100 1000 10000 tf td(off) Common Emitter VCC = 300V , VGE = 15V RG = 10 TC = TC = C 125 C Ω Common Emitter VCC = 300V , VGE = 15V RG = 10 TC = TC = C 125 C Ω Eoff Eon 06 0 30 120 90 150 210 240 270 300180 0 60 30 120 90 150 210 240 270 300180

  1. 01. 09 6/8 GM150HB06BLA Revision No : 1 Rectangular Pulse Duration (sec) Thermal Resistance (Zthjc) Collector - Emitter Voltage VCE (V) Collector Current IC (A) Fig 14. Reverse Bias Safe Operating Area (Max) 0 200 400 600 800 200 300 400 100 10-5 10-3 10-2 10-1 100 10210110-4 10-2 10-1 101 100 Fig15. Transient Thermal Response Curve IGBT : DIODE : VGE = 15V TC = 25 C, RG = 10Ω Collector - Emitter Voltage VCE (V) Gate-Emitter Voitage VGE (V) Fig 13. Gate Charge Characteristics Gate Charge Qg (nC) -150 250 200150100500-50-100 300 350 -15 -10 -300 -200 -100 100 200 300 400 Common Emitter IC = 150Α TC = 25 C VGE VCE
  1. 01. 09 7/8 GM150HB06BLA Revision No : 1 Forward Voltage VF (V) Fig 16. Forward Characteristics Forward Current IF (A) Forward Current IF (A) Reverse Recovery Time trr (ns) 0 60 12030 90 180 240 270 300 210150 160 180 200 100 120 140 Forward Current IF (A) Reverse Recovery Current IRRM (A) 0 60 12030 90 180 210 240 270 300150 Fig 17. Reverse Recovery Current Fig 18. Reverse Recovery Current Common Emitter VCC = 300V , VGE = 15V RG = 10 TC = TC = C 125 C Ω 100 1000 12 3 25TC = C 125TC = C Common Emitter VCC = 300V , VGE = 15V RG = 10 TC = TC = C 125 C
  1. 01. 09 8/8 GM150HB06BLA Revision No : 1 Fig 19. Switching Test Circuit Fig 20. Definition Switching Time & Loss Fig 21. Definition Diode Switching Time 90% 90% 10% + Vge Vge Vce Ic Ic IcIc t2t1 tf Vce Ic dtEoff t1ઠ td(off) Vcc 10% Irr Qrr Vpk Ic DIODE REVERSE WAVEFORMS trr tx Ic dt tx trr ઠ GATE VOLTAGE DUT 10% + Vg 10% 90% + Vg Vce Vce Ic dtEon Vcc Ic IcIc Ipk td tr t2(on) OUT VOLTAGE AND CURRENT ઠ Diode Clamp C C G G E E L Measurement Pulse /DUT DUT/ VGE = 15V -10V 300V Rg DRIVER + +_ _