GM100HB06BLA KEC | Alldatasheet
Document overview
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Technical content
2-PACK IGBT MODULE (Half - Bridge)
FEATURES
hLow VCE(sat) hLow Turn-off loss hShort tail current hPositive temperature coefficient h10us Short Circuit Capability APPLICATION hMotor Controls hGeneral purpose inverters hServo Controls INTERNAL CIRCUIT 13 0.3+_ 14 0.3+_ 13 0.3+_ 13 0.3+_ 17 0.3+_ 6 0.5 OUTLINE DRAWING Unit : mm 35 0.5+_ 28 0.5+_ 25 0.3+_ 17 0.3+_ 93 0.5+_ 80 0.5+_ 23 0.3+_+_23 0.3 30 0.5+_ 22 0.5+_ +_30 0.5 +_31 0.5 MAXIMUM RATING (@Tc=25 Per Leg, Unless otherwise noted) 1 2 1. C2 /E1 2. E2 3. C1 4. G1 5. E1 6. G2 7. E2 2013. 5. 09 Revision No : 0 CHARACTERISTIC SYMBOL RATING UNIT Collector-to-Emitter Voltage VCES 600 V Gate-Emitter Voltage VGES 20 V Continuous Collector Current @TC=25 IC 130 A @TC=80 100 Pulsed Collector Current ICP 200 A Diode Continuous Forward Current @TC=25 IF 130 A @TC=80 100 Isolation Voltage test AC @ 1 minute Viso 2500 V Junction Temperature Tj -40 ~ +150 Storage Temperature Tstg -40 ~ +125 Weight Weight 1905 g Mounting Torque (M6) M 5 N.m Terminal Connection torque (M5) M 4 N.m
ELECTRICAL CHARACTERISTICS (IGBT, @Tc=25 Per Leg, Unless otherwise noted) CHARACTERISTIC SYMBOL MIN TYP MAX. UNIT Junction to Case (IGBT Part, Per 1/2 Module) Rth(j-c) - 0.46 - /W Junction to Case (Diode Part, Per 1/2 Module) Rth(j-c) - 0.42 - ELECTRICAL CHARACTERISTICS (DIODE, @Tc=25 Per Leg, Unless otherwise noted) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Static Collector-Emitter Breakdown Voltage BVCES IC = 1mA, VGE=0V 600 - - V Collector Cut-off Current ICES VCE=600V, VGE=0V - - 1 mA Gate Leakage Current IGES VGE=20V -200 - 200 nA Gate Threshold Voltage VGE(th) VCE=VGE, IC=1mA 4.5 - 7.0 V Collector-Emitter Saturation Voltage VCE(sat) VGE= 15V, IC=100A - 2.1 2.5 V Dynamic Turn On Delay Time td(on) VCC= 300V, IC=100A, RG=3.3ʃ, VGE=15V, inductive load L = 100uH - 126 - nsRise Time tr - 45 - Turn Off Delay Time td(off) - 204 - Fall Time tf - 41.5 - Turn-On Switching Loss EON - 3.6 - mJ Turn-Off Switching Loss Eoff - 0.74 - Gate Charge Qge IC = 100A, VCC=300V, VGE=15V - 60 - nC Input Capacitance Cies VCE= 25V, VGE=0V, f=1ʀ - 8 - nFOutput Capacitance Coes - 0.38 - Reverse Transfer Capacitance Cres - 0.61 - Short circuit current ISC VCC= 300V, VGE=15V tpsc 10 ɫ - 400 - A CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Diode Forward Voltage VF IF = 100A, VGE=0V - 1.35 1.6 V Diode Reverse Recovery Charge Qrr IF=100A, VR=300V, di /dt =-900A/ɫ - 3 - uQ Diode Peak Reverse Recovery Current Irr - 64 - A 2013. 5. 09 Revision No : 0