GFP4045TS SMCDIODE | Alldatasheet

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Technical content

Features

Maximum Ratings(limiting values, at 25 °C unless otherwise specified) Characteristics Symbol Condition Max. Units Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR - 45 V Average Rectified Forward Current IF (AV) Tc=119°C, In DC 40 A Peak One Cycle Non-Repetitive Surge Current IFSM 8.3 ms, half Sine pulse 350 A Rating for fusing (t<8.3ms) I2t TJ = 25 C 750 A2sec

Electrical Characteristics

Characteristics Symbol Condition Typ. Max. Units Forward Voltage Drop* VF1 @ 40A, Pulse, TJ = 25 C 0.48 0.52 V Reverse Current* IR1 @VR = rated VR TJ = 25 C 0.03 0.20 mA IR2 @VR = rated VR TJ = 100 C - 20 mA IR3 @VR = rated VR TJ = 125 C 26 55 mA Junction Capacitance CT @VR = 5V, TC = 25 C fSIG = 1MHz 5840 - pF  Low thermal resistance  Lower forward voltage drop, low power loss  Isolate Package design, ideal for heat dispersion  High forward current capability  Trench MOS Schottky technology  Excellent anti-humidity  Low profile package  High forward surge capability  All SMC parts are traceable to the wafer lot  Additional electrical and life testing can be performed upon request  Case: GFP  High temperature soldering guaranteed  Heated-tool welding 260℃,10 seconds  Marking Code: GFP4045TS GFP

Data Sheet N2655. Draft.  China - Germany - Korea - Singapore - United States   http://www.smc-diodes.com - sales@ smc-diodes.com  - 2 - GFP4045TS Characteristics Symbol Condition Specification Units Junction Temperature IN DC Forward Mode, without reverse bias, t ≤1 h TJ - -55 to +200 C Storage Temperature Tstg - -55 to +150 C Typical Thermal Resistance Junction to Case RJC - 1.5 C/W Thermal-Mechanical Specifications(Ta=25℃ Unless otherwise specified) Ratings and Characteristics Curves Fig.2-Typical Reverse CharacteristicsFig.1-Typical Forward Voltage Characteristics Fig.3-Capacitance vs. Reverse Voltage 100 125℃ Forward Voltage-VF(V) Instantaneous Forward Current-IF(A) 25℃25C 125C 9 18 27 36 45 1E-3 0.01 0.1 100 125℃ Reverse Current-IR(mA) Reverse Voltage-VR(V) 25℃25C 125C

Data Sheet N2655. Draft.  China - Germany - Korea - Singapore - United States   http://www.smc-diodes.com - sales@ smc-diodes.com  - 3 - GFP4045TS Solder block Specification The composition of the tin block is Sn50Pb50. The size of the tin block is 9(-0.3)*4(-0.2)*1(±0.1) mm. Solder block to be centered,not exceed the flat groove. Ordering Information Marking Diagram Device Package Shipping GFP4045TS GFP 36pcs/Tube Order P/N Terminals Additional GFP4045TS-S1 Tin Plated None GFP4045TS-S2 Tin Plated Solder Paste GFP4045TS-S3 Tin Plated Solder Block Where XXXXX is YYWWL GFP4045TS = Device Code YY = Year WW = Week L = Lot Number Solder Block Solder Paste

Data Sheet N2655. Draft.  China - Germany - Korea - Singapore - United States   http://www.smc-diodes.com - sales@ smc-diodes.com  - 4 - GFP4045TS Mechanical Dimensions GFP (Millimeters) Symbol Dimensions in millimeters Min. Typical Max A 38.2 38.4 B 33.85 34 34.15 C 34.75 34.9 35.05 D 22.98 E 13.9 14 F 17 17.1 G 12.4 12.5 H 10.08 10.23 10.38 I 8.5 8.6 J 5.5 5.6 5.7 K 2.3 2.4 L 4-∅ 1.9 M 0.78 0.8 0.82

Data Sheet N2655. Draft.  China - Germany - Korea - Singapore - United States   http://www.smc-diodes.com - sales@ smc-diodes.com  - 5 - GFP4045TS DISCLAIMER: 1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product characteristics. Before ordering, purchasers are advised to contact the SMC Diode Solutions sales department for the latest version of the datasheet(s). 2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment, medical equipment , and safety equipment) , safety should be ensured by using semiconductor devices that feature assured safety or by means of users’ fail-safe precautions or other arrangement . 3- In no event shall SMC Diode Solutions be liable for any damages that may result from an accident or any other cause during operation of the user’s units according to the datasheet(s). SMC Diode Solution assumes no responsibility for any intellectual property claims or any other problems that may result from applications of information, products or circuits described in the datasheets. 4- In no event shall SMC Diode Solutions be liable for any failure in a semiconductor device or any secondary damage resulting from use at a value exceeding the absolute maximum rating. 5- No license is granted by the datasheet(s) under any patents or other rights of any third party or SMC Diode Solutions. 6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permission of SMC Diode Solutions. 7- The products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their application will hinder maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third party. When exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and regulations..