GFC140 GSG | Alldatasheet
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Gunter Semiconductor GmbH Gunter Semiconductor GmbH Gunter Semiconductor GmbH Gunter Semiconductor GmbH GFC140 N Channel Power MOSFET with extremely low RDS(on) Chip Specification General Description: * Advanced Process Technology * Dynamic dV/dt Rating * 175℃℃ ℃℃ Operating Temperature * Fast Switching * Fully Avalanche Rated * Extremely low R DS(on) Mechanical Data: D20 Dimension 4.32mm x 4.88mm Thickness: 400 µµ µµm Metallization: Top : : Al Backside : CrNiAg / Au Suggested Bonding Conditions: Die Mounting: Solder Perform 95/5 PbSn or 92.5./2.5/5 PbAgIn Source Bonding Wire: 15 mil Al Absolute Maximum Rating Characteristics Symbol Limit Unit Test Conditions Drain-to-Source Breakdown Voltage V(BR)DSS 100 V VGS=0V, ID=250µΑ Static Drain-to - Source On-resistance RDS(ON) 0.077 Ω VGS=10V, ID=9Α Continuous Drain current ( in target package) ID@25℃ 18 A VGS=10V Continuous Drain current ( in target package) ID@100℃ 11 A VGS=10V Operation Junction Tj -55~175 ℃ Storage Temperature TSTR -55~175 ℃ Target Device: IRF540 TO-220AB P D 125 W @Tc=25℃