GF5045 ZSELEC | Alldatasheet
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ngle Phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. Z ibo Seno Electronic Engineering Co., Ltd. GF5045 M ou n t i n g P o s i t i o n : A n y P o l a r i t y : S e e D i a g r a m erminals: Plated Leads Solderable per C l a s s i f i c a t i o n R a t i n g 9 4 V - O Plastic Case Material has UL Flammability G u a r d R i n g D i e C o n s t r u c t i o n For Use in Salar Bypass Inverse-plarity Protection Application Low Power Loss, High Efficiency I d e a l l y S u i t e d f o r A u t o m a t i c A s s e m b l y /G01/G01/G01/G01/G01 /G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01 M e ch a n i c a l D a t a ! T MIL- STD-202, Method 208 Lead Free: For RoHS / Lead Free Version ! Schottk y Barrier Chip Item Symbol Unit Conditions Repetitive Peak Reverse Voltage VRRM V 45 Average Rectified Output Current Io A 60HZ sine wave, R- load, Ta=25℃ 50 Surge(Non-repetitive)Forward Current IFSM A 60HZ sine wave, 1 cycle, Ta=25℃ 400 Current Squared Time I2t A2s 1ms≤t＜8.3ms Tj=25℃ 375 Storage Temperature Tstg ℃ -55 ~ +200 Junction Temperature Tj ℃ IN DC Forward Mode-Forward Operations， without reverse bias, t ≤1 h (Fig. 1) ① -55 ~ + 200 Limiting Values （Absolute Maximum Rating ) Item Symbol Unit Test Condition Max Peak Forward Voltage VFM V IFM = 50A 0.60 IRRM1 Ta=25℃ 0.50 Peak Reverse Current IRRM2 mA Ta=125℃ 100 Thermal Resistance(Typical) RθJ-c ℃/W Between junction and case 0.8 VRM=VRRM 1 of 4 www.senocn.com GF5045 ① Meets the requirements of IEC 61215 Ed. 2 bypass diode thermal test. Note: Or dering Information Part No. Packing Tube GF5045 GF5045 Cas! e: Molded Plastic All Dimensions in millimeter DIM. MIN. MAX. A C D E F G H B 9.80 10.20 10.609.60 8.50 9.20 1.67---- 0.51 1.01 2.10 2.50 2.44 2.64 1.10 4.70 K J I 1.40 4.40 0.640.30 4.40 4.80 D PAK/TO-2632 ANODE CATHODE Remark
/G01/G01 Z ibo Seno Electronic Engineering Co., Ltd. www.senocn.com GF5045 GF5045 Characteristics(Typical) Num ber of Cycles Fig.1: IF(AV)--Tc Derating Fig.2:Surge Forward Current Capadility Io (A) Ta (℃) 50 100 20 0150 IN DC50 100 IFS M ( 2 10 20 100 100 200 300 400 600 500 8.3ms Single Half Since-Wave J EDEC Method Fig.3:Instantaneous Forward Voltage Fig.4:Typical Reverse Characteristics 0.1 0.2 0.5 VF (V) IF( 1.0 Ta=25℃ 20 40 60 80 100 0.01 0.1 1.0 100 VRM(%) IRR M(mA) Tj=100℃ Tj =25℃ TC measure point
/G01/G01 Z ibo Seno Electronic Engineering Co., Ltd. www.senocn.com GF5045 GF5045 Ou tline and Dimensions
/G01/G01 Z ibo Seno Electronic Engineering Co., Ltd. www.senocn.com GF5045 GF5045 Ou tline and Dimensions