GF3045MC THINKISEMI | Alldatasheet
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Unit:inch(mm) ※ ThinkiSemi latest&matured p rocess Schottky ※ Low forward volta g e dro p ※ Hi g h current ca p abilit y Low reverse leakage current Low reverse leakage current ※ Hi g h sur g e current ca p abilit y Application ※ Automotive Inverters and Solar Inverters ※ Car Audio Am p lifiers and Sound Device S y stems ※ Platin g Power Su pp l y ,Motor Control,UPS and SMPS etc. Mechanical Data Case:TO-263AB/D2PAK package outline Epoxy: UL 94V 0r a t ef l a m er e t a r d a n t Epoxy: UL 94V 0 rate flame retardant ※ Terminals: Solderable p er MIL-STD-202 method 208 ※ Polarit y : As marked on diode bod y ※ Mountin g p osition: An y ※ Wei g ht: 2.0 g ram a pp roximatel y GF3045MC Pb Free Plating Product GF3045MC Pb
30.0 Ampere,45Volt PhotoVoltaic Common Cathode Schottky Barrier Rectifier Diodes
© 1995 Thinki Semiconductor Co., Ltd. http://www.thinkisemi.com.tw/ Page 1/2Rev.10T ※ Solar Junction Box Application Positive Common Cathode Case Maximum Ratings (Ta=25℃ Unless otherwise specified） PARAMETER SYMBOL UNIT GF3045MC Device marking code GF3045MC Repetitive Peak Reverse Voltage VRRM V 45 Average Rectified Output Current @60Hz sine wave, R-load, Ta=25℃ IO A 2*15 Surge(Non-repetitive)Forward Current @60Hz half sine wave, 1 cycle, Ta=25℃ IFSM A 325 Current Squared Time @1ms≤t≤8.3ms Tj=25℃ I t A s 438 Storage Temperature Tstg ℃ -55 ~+150 Junction Temperature@ IN DC Forward Mode-Forward Operations，without reverse bias, t ≤1 h (Fig. 1)① Tj ℃ -55 ~+200 NOTE ① Meets the requirements of IEC 612 15 Ed. 2 bypass diode thermal test. ■Electrical Characteristics（Ta=25℃ Unless otherwise specified） PARAMETER SYMBOL UNIT TEST CONDITIONS GF3045MC Maximum instantaneous forward voltage drop per diode VFM V IFM=15.0A 0.5 Maximum DC reverse current at rated DC blocking voltage per diode IRRM1 mA VRM=VRRM Ta=25℃ 0.5 IRRM2 VRM=VRRM Ta=100℃ 50 Thermal Characteristics （Ta=25℃ Unless otherwise specified） PARAMETER SYMBOL UNIT GF3045MC Thermal Resistance Between junction and case R θJ-C ℃/W 1.5 (Total Device 2x15A=30A) (Per Diode/Per Leg) Internal Configuration
© 1995 Thinki Semiconductor Co., Ltd. http://www.thinkisemi.com.tw/ Page 2/2Rev.10T GF3045MC Characteristics (Typical) 0.2 0.4 0.60.1 1.0 100 Ta=25 0.80 Instantaneous Forward Current (A) Instantaneous Forward Voltage (V) 02 04 06 08 0 1 0 0 0.01 0.1 1.0 100 Tj=100 Tj=25 Instantaneous Reverse Current (mA) Percent of Rated Peak Reverse Voltage (%) IN DC 12.0 9.0 6.0 3.0 Case Temperature （℃） Average Forward Output Current (A) 1 2 10 20 100 8.3ms Single Half Sine-Wave JEDEC Method Peak Forward Surge Current (A) Number of Cycles 120 300 360 1.0 FIG2:Surge Forward Current CapabilityFIG1:Io -Tc Curve FIG4: Typical Reverse Characteristics FIG3: Forward Voltage 15.0 50 100 150 240 180 200 5