GF20N60TS LUGUANG | Alldatasheet
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Technical content
Features
◼ 600V,20A ◼ V CE(sat)(typ.)=1.85V@VGE=15V,IC=20A ◼ High speed switching ◼ Higher system efficiency ◼ Soft current turn-off waveforms ◼ Square RBSOA General Description LGE trench IGBTs offer lower losses and higher energy efficiency for application such as IH (induction heating),UPS, general inverter and other soft switching applications. Absolute Maximum Ratings Symbol Parameter Value Units VCES Collector-Emitter Voltage 600 V VGES Gate-Emitter Voltage + 30 V IC Continuous Collector Current ( TC=25 ℃) 40 A Continuous Collector Current ( TC=100℃) 20 A ICM Pulsed Collector Current (Note 1) 60 A IF Diode Continuous Forward Current ( TC=100 ℃) 20 A IFM Diode Maximum Forward Current (Note 1) 60 A tsc Short Circuit Withstand Time 10 us PD Maximum Power Dissipation ( TC=25 ℃) 40 W Maximum Power Dissipation ( TC=100℃) 15 W TJ Operating Junction Temperature Range -55 to +150 ℃ TSTG Storage Temperature Range -55 to +150 ℃ Thermal Characteristics Symbol Parameter Max. Units Rth j-c Thermal Resistance, Junction to case for IGBT 3.0 ℃/ W Rth j-c Thermal Resistance, Junction to case for Diode 3.8 ℃/ W Rth j-a Thermal Resistance, Junction to Ambient 65 ℃/ W ITO-220AB/TO-220F http://www.lgesemi.com Revision:20201218P1 mail:lge@lgesemi.com
Electrical Characteristics (TC=25℃ unless otherwise noted ) Symbol Parameter Test Conditions Min. Typ. Max. Units BVCES Collector-Emitter Breakdown Voltage VGE= 0V, IC= 250uA 600 - - V ICES Collector-Emitter Leakage Current VCE= 600V, VGE= 0V - - 100 uA IGES Gate Leakage Current, Forward VGE=30V, VCE= 0V - - 100 nA Gate Leakage Current, Reverse VGE= -30V, VCE= 0V - - -100 nA VGE(th) Gate Threshold Voltage VGE= VCE, IC= 250uA 4.5 - 6.5 V VCE(sat) Collector-Emitter Saturation Voltage VGE=15V, IC= 15A - 1.85 2.3 V Qg Total Gate Charge VCC=400V VGE=15V IC=20A - 62 nC Qge Gate-Emitter Charge - 6 nC Qgc Gate-Collector Charge - 33 nC t d(on) Turn-on Delay Time VCC=400V VGE=15V IC=20A RG=20 Inductive Load TC=25 ℃ - 16 - ns t r Turn-on Rise Time - 24 - ns t d(off) Turn-off Delay Time - 122 - ns t f Turn-off Fall Time - 35 - ns Eon Turn-on Switching Loss - 0.43 - mJ Eoff Turn-off Switching Loss - 0.29 - mJ Ets Total Switching Loss - 0.72 - mJ Cies Input Capacitance VCE=25V VGE=0V f = 1MHz - 920 - pF Coes Output Capacitance - 150 - pF Cres Reverse Transfer Capacitance - 54 - pF Electrical Characteristics of Diode (TC=25℃ unless otherwise noted) Symbol Parameter Test Conditions Min. Typ. Max. Units VF Diode Forward Voltage IF=20A - 1.5 2.3 V t r r Diode Reverse Recovery Time VCE = 300V IF= 20A dIF/dt = 500A/us - 90 ns I r r Diode peak Reverse Recovery Current - 19 A Qr r Diode Reverse Recovery Charge - 732 nC Notes： 1. Repetitive Rating: Pulse width limited by maximum junction temperature GF20N60TS 600V/20A Trench Field Stop IGBT http://www.lgesemi.com Revision:20201218P2 mail:lge@lgesemi.com
Package Mechanical DimensionsITO-220AB/TO-220F GF20N60TS 600V/20A Trench Field Stop IGBT http://www.lgesemi.com Revision:20201218P6 mail:lge@lgesemi.com