GF2045MG THINKISEMI | Alldatasheet
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© 2006 Thinki Semiconductor Co.,Ltd. http://www.thinkisemi.com/ Page 1/2 F e a t u r e s /cuspopen Plastic material used carries Underwriters Laboratory Classifications 94V-0 /cuspopen Metal silicon junction, majority carrier conduction /cuspopen Low power loss, high efficiency /cuspopen High current capability, low forward voltage drop /cuspopen High surge capability /cuspopen For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications /cuspopen Guardring for overvoltage protection /cuspopen High temperature soldering guaranteed: 260 o C/10 seconds,0.25”(6.35mm)from case M e c h a n i c a l D a t a /cuspopen Cases: JEDEC TO-263/D2PAK molded plastic body /cuspopen Terminals: Pure tin plated, lead free. solderable per MIL-STD-750, Method 2026 /cuspopen Polarity: As marked /cuspopen Mounting position: Any /cuspopen Mounting torque: 5 in. - lbs. max /cuspopen Weight: 1.8 gram approximately Unit : inch (mm) TO-263 LEFT PIN RIGHT PIN Note: Pins Left & Right must be electrically connected at the printed circuit board. BOTTOM SIDE HEAT SINK GF2045MG thru GF20100MG Pb Free Plating Product GF2045MG thru GF20100MG
20.0 Ampere Surface Mount PhotoVoltaic Bypass Schottky Barrier Rectifier
Maximum Ratings and Electrical Characteristics Rating at 25 ℃ ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20% Symbol GF2045MG GF2060MG GF20100MG Unit V RRM V RMS V DC I RRM A dV/dt V/us Cj pF R θjC T J T STG 560 420 10000 5 mA0.2 0.1 A 0.82 0.72 0.87 0.95 Typical Junction Capacitance AI FSM Maximum Instantaneous Forward Voltage (Note 2) I F =20A, T A =25℃ I F =20A, T A =125℃ V F Voltage Rate of Change (Rated V R V 150 Typical Thermal Resistance Type Number A Maximum Reverse Current @ Rated VR T A =25 ℃ T A =125 ℃ Maximum Repetitive Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Peak Repetitive Reverse Surge Current (Note 1) Note 2: Pulse Test : 300uS Pulse Width, 1% Duty Cycle Note 1: 2.0uS Pulse Width, f=1.0KHz Operating Temperature Range Storage Temperature Range - 65 to + 150 - 65 to + 150 Peak Forward Surge Current, 8.3 ms Single Half Sine- wave Superimposed on Rated Load (JEDEC method) Maximum Average Forward Rectified Current at Tc=125℃ Peak Repetitive Forward Current (Rated VR, Square Wave, 20KHz) at Tc=125 ℃ I F(AV) I FRM 0.5 I R 0.75 15 10 0.65 45 60 100 V 31 42 70 V 45 60 100 V
© 2006 Thinki Semiconductor Co.,Ltd. http://www.thinkisemi.com/ Page 2/2 GF2045MG thru GF20100MG RATINGS AND CHARACTERISTIC CURVES (GF2045MG thru GF20100MG) FIG.1 FORWARD CURRENT DERATING CURVE 50 60 70 80 90 100 110 120 130 140 150 CASE TEMPERATURE ( o AVERAGE FORWARD A CURRENT (A) RESISTIVE OR INDUCTIVELOA FIG. 2 MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT PER LEG 100 125 150 0 1 10 100 NUMBER OF CYCLES AT 60 Hz PEAK FORWARD SURGE CURRENT (A) 8.3mS Single Half Sine Wave JEDEC Method FIG. 4 TYPICAL REVERSE CHARACTERISTICS 0.001 0.01 0.1 100 0 20 40 60 80 100 120 140 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) INSTANTANEOUS REVERSE CURRENT (mA) TA=125℃ TA=25℃ FIG. 5 TYPICAL JUNCTION CAPACITANCE 100 1000 10000 0.1 1 10 100 REVERSE VOLTAGE (V) JUNCTION CAPACITANCE (pF) A TA=25℃ f=1.0MHz Vsig=50mVp-p GF2045MG-GF2060MG GF20100MG FIG. 3 TYPICAL FORWARD CHARACTERISRICS 0.01 0.1 100 FORWARD VOLTAGE (V) INSTANTANEOUS FORWARD CURRENT (A) TA=125℃ Pulse Width=300uS 1% Duty Cycle TA=25℃ GF2045MG GF2060MG GF20100MG FIG. 6 TYPICAL TRANSIENT THERMAL IMPEDANCE 0.1 100 0.01 0.1 1 10 100 T-PULSE DURATION(s) TRANSIENT THERMAL IMPEDANCE (℃/W)