GF15N65SS LUGUANG | Alldatasheet

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Key performance:  VCE=650V  IC=15A@TC=100℃  VCE(sat)=1.6V Features:  Highruggednessperformance.  10μsshortcircuitcapability.  PositiveVCE(sat) temperaturecoefficient.  Highefficiencyformotorcontrol.  Excellentcurrentsharinginparalleloperation.  RoHScompliant. Applications:  Homeappliances  Motordrives  Generalinverter TO-220F GF15N65SS 650V/15A Trench and Field Stop IGBT http://www.lgesemi.com Revision:20240722-P1 mail:lge@lgesemi.com ench and Field Stop IGBT

Symbol Parameter Values Unit VCES Collector-emittervoltage 650 V VGES Gate-emittervoltage ±20 V IC Continuous collectorcurrent (TC=25℃) 30 A Continuous collectorcurrent (TC=100℃) 15 A ICM Pulsedcollector current,tp limitedby Tvjmax 60 A IF Diode continuous forward current (TC=100℃) 15 A IFM Diode maximum current,tp limitedby Tvjmax 60 A tsc Shortcircuitwithstandtime 10 μs Ptot Powerdissipation (TC=25℃) 39 W Powerdissipation (TC=100℃) 19 W Tvj Operating junctiontemperature range -40 to+175 ℃ Tstg Storage temperaturerange -55 to+150 ℃ Symbol Parameter Values Unit Typ. Max. Rth(j-c) Thermalresistance,junction tocase forIGBT - 3.8 K/W Rth(j-c) Thermalresistance,junction tocase forDiode - 4.2 K/W Rth(j-a) Thermalresistance,junction toambient - 70 K/W Maximum ratings Thermal characteristics ench and Field Stop IGBThttp://www.lgesemi.com Revision:20240722-P2 mail:lge@lgesemi.com GF15N65SS 650V/15A Trench and Field Stop IGBT

Symbol Parameter Test condition Values UnitMin. Typ. Max. BVCES Collector-emitterbreakdown voltage VGE=0V,IC=250μA 650 - - V ICES Collector-emitterleakagecurrent VCE=650V,VGE=0V - - 50 μA IGES Gateleakagecurrent,forward VGE=20V,VCE=0V - - 100 nA Gateleakagecurrent,reverse VGE=-20V,VCE=0V - - -100 nA VGE(th) Gate-emitterthreshold voltage VGE=VCE,IC=1mA 5.1 5.6 6.1 V VCE(sat) Collector-emittersaturationvoltage VGE=15V,IC=15A - 1.6 - V VGE=15V,IC=15A,Tvj=175℃ - 2.1 - V Symbol Parameter Test condition Values UnitMin. Typ. Max. Cies Input capacitance VCE=30V VGE=0V f =1MHz - 1055 - pF Coes Output capacitance - 57 - pF Cres Reverse transfercapacitance - 15 - pF Qg Totalgatecharge VCC=520V VGE=15V IC=15A - 55 - nC Electrical characteristics of IGBT (Tvj=25℃ unlessotherwisespecified) Staticcharacteristics Dynamiccharacteristics ench and Field Stop IGBT http://www.lgesemi.com Revision:20240722-P3 mail:lge@lgesemi.com GF15N65SS 650V/15A Trench and Field Stop IGBT

Symbol Parameter Test condition Values UnitMin. Typ. Max. td(on) Turn-ondelaytime VCC=400V VGE=0/15V IC=15A RG=10 Inductiveload - 17 - ns tr Risetime - 14 - ns td(off) Turn-offdelaytime - 104 - ns tf Falltime - 46 - ns Eon Turn-onenergy - 0.30 - mJ Eoff Turn-offenergy - 0.27 - mJ Ets Totalswitchingenergy - 0.57 - mJ td(on) Turn-ondelaytime VCC=400V VGE=0/15V IC=15A RG=10 Inductiveload Tvj=175℃ - 17 - ns tr Risetime - 15 - ns td(off) Turn-offdelaytime - 123 - ns tf Falltime - 82 - ns Eon Turn-onenergy - 0.39 - mJ Eoff Turn-offenergy - 0.42 - mJ Ets Totalswitchingenergy - 0.81 - mJ Switchingcharacteristics ench and Field Stop IGBT http://www.lgesemi.com Revision:20240722-P4 mail:lge@lgesemi.com GF15N65SS 650V/15A Trench and Field Stop IGBT

Symbol Parameter Test condition Values UnitMin. Typ. Max. VF Diodeforwardvoltage IF=15A - 1.4 - V IF=15A,Tvj=175℃ - 1.1 - V trr Diodereverserecoverytime VR=400V IF=15A diF/dt=-600A/μs - 55 - ns Irrm Diodepeakreverserecoverycurrent - 9.5 - A Qrr Diodereverserecoverycharge - 220 - nC trr Diodereverserecoverytime VR=400V IF=15A diF/dt=-600A/μs Tvj=175℃ - 77 - ns Irrm Diodepeakreverserecoverycurrent - 15 - A Qrr Diodereverserecoverycharge - 481 - nC Electrical characteristics of Diode (Tvj=25℃ unlessotherwisespecified) ench and Field Stop IGBT http://www.lgesemi.com Revision:20240722-P5 mail:lge@lgesemi.com GF15N65SS 650V/15A Trench and Field Stop IGBT

Typical performance characteristics Fig1.Typicaloutputcharacteristic(Tvj=25℃) Fig2.Typicaloutputcharacteristic(Tvj=175℃) Fig3.PowerdissipationasafunctionofTC Fig4.TypicalIF asafunctionofVF Fig5.TypicalVGE(th) asafunctionofTvj (IC=1mA) Fig6.TypicalVF asafunctionofTvj ench and Field Stop IGBT http://www.lgesemi.com Revision:20240722-P6 mail:lge@lgesemi.com GF15N65SS 650V/15A Trench and Field Stop IGBT

Typical performance characteristics Fig7.TypicalVCEsat asafunctionofTvj Fig8.TypicalGatecharge Fig9.TypicalcapacitanceasafunctionofVCE (f=1Mhz,VGE=0V) Fig10.TypicalswitchingtimesasafunctionofIC Fig11.Typicalswitchingenergylossesasa functionofIC Fig12.TypicalswitchingtimesasafunctionofRG ench and Field Stop IGBT http://www.lgesemi.com Revision:20240722-P7 mail:lge@lgesemi.com GF15N65SS 650V/15A Trench and Field Stop IGBT

Typical performance characteristics Fig13.Typicalswitchingenergylossesasa functionofRG Fig14.Safeoperatingarea Fig15.Transientthermalimpedance,IGBT ench and Field Stop IGBT http://www.lgesemi.com Revision:20240722-P8 mail:lge@lgesemi.com GF15N65SS 650V/15A Trench and Field Stop IGBT

Ref. Dimensions Millimeters Inches A 4.50 - 4.90 0.177 - 0.193 C 0.47 - 0.66 0.019 - 0.026 C2 2.45 - 2.75 0.096 - 0.108 C3 2.60 - 3.00 0.102 - 0.118 D 8.80 - 9.30 0.346 - 0.366 E 9.80 - 10.40 0.386 - 0.410 F 6.40 - 6.80 0.252 - 0.268 G 2.40 - 2.70 0.094 - 0.106 H 28.0 - 29.80 1.102 - 1.173 L2 1.14 - 1.70 0.045 - 0.067 V1 - 45° - - 45° - Package dimension TO-220F E D H FV1 Φ3.05-3.25mm C G B A ench and Field Stop IGBT http://www.lgesemi.com Revision:20240722-P9 mail:lge@lgesemi.com GF15N65SS 650V/15A Trench and Field Stop IGBT