GC50MPS12-247_18 GENESIC | Alldatasheet

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Technical content

GCϱϬMPSϭϮ-Ϯϰ7 ϭϮϬϬ V SiC MPS™ Diode Aug 2018 Rev1.2 www.genesicsemi.com/schottky_mps/GC50MPS12-247. pdf Page 1 of 7 Silicon Carbide Schottky Diode Features Package

  • High Avalanche (UIS) Capability
  • Enhanced Surge Current Capability
  • Superior Figure of Merit QC/IF
  • Low Thermal Resistance
  • 175 °C Maximum Operating Temperature
  • Temperature Independent Switching Behavior
  • Positive Temperature Coefficient of VF
  • Extremely Fast Switching Speeds TO-247-2L Advantages Applications
  • Low Standby Power Losses
  • Improved Circuit Efficiency (Lower Overall Cost)
  • Low Switching Losses
  • Ease of Paralleling without Thermal Runaway
  • Smaller Heat Sink Requirements
  • Low Reverse Recovery Current
  • Low Device Capacitance
  • Low Reverse Leakage Current
  • Boost Diode in Power Factor Correction (PFC)
  • Switched Mode Power Supply (SMPS)
  • Uninterruptible Power Supply (UPS)
  • Motor Drives
  • Freewheeling / Anti-parallel Diode in Inverters
  • Solar Inverters & Wind Energy Converters
  • Electric Vehicles (EV) & DC Fast Charging
  • Induction Heating & Welding Absolute Maximum Ratings (At TC = 25 °C Unless Otherwise Stated) Parameter Symbol Conditions Values Unit Repetitive Peak Reverse Voltage V RRM 1200 V Continuous Forward Current I F TC = 25 °C, D = 1 212 A TC = 135 °C, D = 1 103 TC = 163 °C, D = 1 50 Non-Repetitive Peak Forward Surge Current, Half Sine Wave I F,SM TC = 25 °C, tP = 10 ms 300 A TC = 150 °C, tP = 10 ms 240 Repetitive Peak Forward Surge Current, Half Sine Wave IF,RM TC = 25 °C, tP = 10 ms 160 A TC = 150 °C, tP = 10 ms 105 Non-Repetitive Peak Forward Surge Current I F,max T C = 25 °C, tP = 10 µs 1800 A i2t Value ∫i2 dt T C = 25 °C, tP = 10 ms 450 A 2s Non-Repetitive Avalanche Energy E AS L = 0.4 mH, I AS = 50 A 450 mJ Diode Ruggedness dV/dt V R = 0 ~ 960 V 100 V/ns Power Dissipation P tot T C = 25 °C 1228 W Operating and Storage Temperature T j , Tstg -55 to 175 °C VRRM = 1200 V IF (Tc = 135°C) = 103 A QC = 199 nC

GCϱϬMPSϭϮ-Ϯϰ7 ϭϮϬϬ V SiC MPS™ Diode Aug 2018 Rev1.2 www.genesicsemi.com/schottky_mps/GC50MPS12-247. pdf Page 2 of 7

Electrical Characteristics

Parameter Symbol Conditions Values Unit Min. Typ. Max. Diode Forward Voltage V F IF = 50 A, Tj = 25 °C 1.5 1.8 V IF = 50 A, Tj = 175 °C 2 2 .4 Reverse Current I R VR = 1200 V, Tj = 25 °C 4 4 0 µA VR = 1200 V, Tj = 175 °C 12 144 Total Capacitive Charge Q C IF ≤ IF,MAX dIF/dt = 200 A/μs Tj = 175 °C VR = 400 V 135 n C VR = 800 V 199 Switching Time t s VR = 400 V < 10 ns VR = 800 V Total Capacitance C VR = 1 V, f = 1 MHz, Tj = 25 °C 3263 pF VR = 800 V, f = 1 MHz, Tj = 25 °C 249 Thermal / Mechanical Characteristics Thermal Resistance, Junction - Case R thJC 0 .1 °C/W Weight WT 6 g Mounting Torque T M 1 .1 Nm

GCϱϬMPSϭϮ-Ϯϰ7 ϭϮϬϬ V SiC MPS™ Diode Aug 2018 Rev1.2 www.genesicsemi.com/schottky_mps/GC50MPS12-247. pdf Page 6 of 7 Package Dimensions Recommended Solder Pad Layout NOTE 1. CONTROLLED DIMENSION IS INCH. DIMENSION IN BRACKET IS MILLIM ETER. 2. DIMENSIONS DO NOT INCLUDE END FLASH, MOLD FLASH, MATERIAL PR OTRUSIONS

GCϱϬMPSϭϮ-Ϯϰ7 ϭϮϬϬ V SiC MPS™ Diode Copyright © 2018 GeneSiC Semiconductor Inc. All Rights Reserved The information in this document is subject to change without notice Published by GeneSiC Semiconductor, Inc.

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Dulles, VA 20166 Aug 2018 Rev1.2 Page 7 of 7 RoHS Compliance The levels of RoHS restricted materials in this product are bel ow the maximum concentration values (also referred to as the threshold limits) permitted for such substan ces, or are used in an exempted application, in accordance with EU Directive 201 1/65/EC (RoHS), as implemented November 15, 2017. RoHS Declarations for this product can be obtained from your GeneSiC representative. REACh Compliance REACh substances of high concern (SVHCs) information is availab le for this product. Since the European Chemical Agency (ECHA) has published notice of their intent to frequently revise the SVHC listing for the foreseeable future, please contact a GeneSiC representative to insure you get the most up-to-date REACh SVHC Declaration. REACh banned substance information (REACh Article 67) is also available upon request. This product has not been designed or tested for use in, and is not intended for use in, applications implanted into the human body nor in applications in which failure of the prod uct could lead to death, personal injury or property damage, including but not limited to equipment used in the oper ation of nuclear facilities, life-support machines, cardiac defibrillators or similar emergency medical equipment, aircraft navigation or communication or control systems, or air traffic control systems. GeneSiC disclaims all and any warranty and liability arising ou t of use or application of any product. No license, express or implied to any intellectual property rights is granted by this document. Related Links

  • Soldering Document: http://www. genesicsemi.com/quality/quality-manual/
  • Tin-whisker Report: http://www.gene sicsemi.com/quality/compliance/
  • Reliability Report: http://www.gene sicsemi.com/quality/reliability/