GC4600 MICROSEMI | Alldatasheet
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GC4600 – GC4605 Microsemi Microwave Products 75 Technology Drive, Lowell, MA. 01851, 978-442-5600, Fax: 978-937-3748 Page 1 TM ® www.MICROSEMI.com Copyright 2007 Rev.: 2009-01-19 RoHS Compliant CONTROL DEVICES High Power PIN Diodes For the most current data, consult our website: www.MICROSEMI.com Specifications are subject to change, consult factory for the latest information. These devices are ESD sensitive and must be handled using ESD precautions.
DESCRIPTION
The high power PIN diode series is available in surface mount stud and insulated stud packages. These PIN diode chips utilize high resistivity material and an intrinsic float zone process technology thus ensuring low loss and low distortion characteristics through HF band. Due to a thick base width of the ”I” layer, these diodes have very high reverse voltage characteristics with very low thermal impedance. These PIN chips are passivated wi th a proprietary high voltage glassivation process yielding low leakage stable devices. This series of devices meets Ro HS requirements per EU Directive 2002/95/EC. APPLICATIONS/BENEFITS Kilowatt Switching Transfer Switched MRI T/R Switching Power Attenuators
APPLICATIONS
High power PIN diodes are designed as switching elements with frequencies through UHF band. Applications for these devices include antenna coupler, high power filter switches and Magnetic Resonance Imaging (MRI) switches. These devices are designed to withstand very large CW and pulse power environments where CW and peak RF voltages are in the kilovolt range and are offered in rugged low thermal impedance, stud and insulated stud packages. ABSOLUTE MAXIMUM RATINGS AT 25º C (UNLESS OTHERWISE SPECIFIED) Rating Symbol Value Unit Maximum Leakage Current @80% of Minimum Rated VB IR 1.0 uA Storage Temperature TSTG -65 to +150 ºC Operating Temperature TOP -55 to +125 ºC KEY FEATURES Kilowatt Power Handling 2.5 KV Breakdown Voltage Low Loss, Low Distortion through UHF Band Very Low Thermal Impedance for High Power Dissipation Non Magnetic Packaging available Surface Mount and Insulated Stud Packages RoHS Compliant 1
1 Most of our devices are supplied with
Gold plated terminations. Other terminal finishes are available on request. Consult factory for details. GGCC44660000--GGCC44660055
GC4600 – GC4605 Microsemi Microwave Products 75 Technology Drive, Lowell, MA. 01851, 978-442-5600, Fax: 978-937-3748 Page 2 TM ® www.MICROSEMI.com Copyright 2007 Rev.: 2009-01-19 RoHS Compliant CONTROL DEVICES High Power PIN Diodes ELECTRICAL CHARACTERISTICS AT 25 ˚C Model Number VB (V) IR=10uA (Min) CJ (pF)1 VR =50V (Max) RS(Ohms)2 500 mA, 100 mHz (Max) TL(uS) IF=10 mA (Typ) P(˚C/W) THERMAL RESISTANCE (Max) GC4600 1500 0.75 0.3 5 5 GC4601 1500 1.5 0.25 8 4 GC4602 2000 1 0.25 10 3 GC4603 2000 2 0.2 15 3 GC4604 2500 2 0.2 20 2 GC4605 2500 3 0.15 25 1 Notes 1. Capacitance is measured at 1 MHz and -50 volts. 2. Resistance is measured using transmission loss techniques using a 30 style package. 3. These devices are not available in all case styles. Please consult the factory for specific package styles offered. TYPICAL RS CURVES TYPICAL CV CURVES EELLEECCTTRRIICCAALL
GC4600 – GC4605 Microsemi Microwave Products 75 Technology Drive, Lowell, MA. 01851, 978-442-5600, Fax: 978-937-3748 Page 3 TM ® www.MICROSEMI.com Copyright 2007 Rev.: 2009-01-19 RoHS Compliant CONTROL DEVICES High Power PIN Diodes PACKAGE STYLE 171 PACKAGE STYLE 172 PACKAGE STYLE 173 OTHER PACKAGE STYLES AVAILABLE ON REQUEST CONSULT FACTORY MMEECCHHAANNIICCAALL GG