GC4310 MICROSEMI | Alldatasheet

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GC4310 – GC4375 Microsemi Microwave Products 75 Technology Drive, Lowell, MA. 01851, 978-442-5600, Fax: 978-937-3748 Page 1 TM ® www.MICROSEMI.com Copyright  2007 Rev: 2009-02-02 RoHS Compliant CONTROL DEVICES High Speed NIP Diodes

DESCRIPTION

The GC4300 series are high speed (anode base) NIP diodes made with high resistivity reverse epitaxial silicon material. These diodes are passivated with silicon dioxide for high stability and reliability and have been proven by thousands of device hours in high reliability systems. The NIP diode is used when negative bias current is available for forward conduction and will operate with as li ttle as -10 mA bias. These diodes have somewhat faster speeds as compared with similar PIN diodes. These devices can withstand storage temperatures from -65°C to +200°C and will operate over the range from -55°C to +150°C. All devices meet or exceed military environmental specifications of MIL-PRF-19500. This series of diodes meets RoHS requirements per EU Directive 2002/95/EC. The standard terminal finish is gold unless otherwise specified. Consult the factory if you have special requirements. APPLICATIONS/BENEFITS  RF / Microwave Switching  Duplexers  Digital Phase Shifting  Phased Array Radar

APPLICATIONS

The GC4300 series can be used in RF circuits as an on/off element, as a switch, or as a current controlled resi stor in attenuators extending over the frequency range from UHF through Ku band. Switch applications include high speed switches (ECM systems), TR witches, channel or antenna selection switches (telecommunications), duplexers (radar) and digital phase shifters (phased arrays). The GC4300 series are also used as passive and active limiters for low to moderate RF power levels. Attenuator type applications include amplitude modulators, AGC attenuators, power levelers and level set attenuators. IMPORTANT: For the most current data, consult our website: www.MICROSEMI.com Specifications are subject to change, consult the factory for further information. These devices are ESD sensitive and must be handled using ESD precautions.

1 These devices are supplied with gold

plated terminations. ABSOLUTE MAXIMUM RATINGS AT 25º C (UNLESS OTHERWISE SPECIFIED) Rating Symbol Value Unit Maximum Leakage Current @80% of Minimum Rated V B IR 0.5 uA Storage Temperature TSTG -65 to +200 ºC Operating Temperature TOP -55 to +150 ºC KEY FEATURES  Available as packaged devices or as chips for hybrid applications  Low Loss  Suitable for applications to 18Ghz  High Speed  Low Insertion Loss  High Isolation  Reverse Polarity for Applications with special Bias Considerations  RoHS Compliant 1 GC4310 – GC4375

GC4310 – GC4375 Microsemi Microwave Products 75 Technology Drive, Lowell, MA. 01851, 978-442-5600, Fax: 978-937-3748 Page 2 TM ® www.MICROSEMI.com Copyright  2007 Rev: 2009-02-02 RoHS Compliant CONTROL DEVICES High Speed NIP Diodes DEVICE ELECTRICAL PARAMETERS @ 25C (unless otherwise specified)E Model Number 1 VB(V) IR=10μA (Min) CJ (pF) 2 @VR=10V (Max) RS(Ω) 3 @20 mA (Max) TL(nS) IR=6mA/IF=10mA (Typ) Thermal Resistance θ (˚C/W) (Max) GC4371 70 0.1 0.9 70 70 GC4372 70 0.2 0.7 70 70 GC4373 70 0.3 0.6 70 60 GC4374 70 0.4 0.5 70 50 GC4375 70 0.5 0.4 70 40 GC4310 100 0.06 1.5 170 80 GC4311 100 0.1 1 170 70 GC4312 100 0.2 0.9 170 70 GC4313 100 0.3 0.8 170 60 GC4314 100 0.4 0.6 170 50 GC4315 100 0.5 0.4 170 40 GC4320 200 0.06 1.5 200 80 GC4321 200 0.1 1.2 200 70 GC4322 200 0.2 1 200 70 GC4323 200 0.3 0.9 200 60 GC4324 200 0.4 0.8 200 50 GC4325 200 0.5 0.5 200 40 Notes: 1. This series of devices is available in standard case styles 00, 30, and 35. Many other styles are available on request. 2. Capacitance is measured at 1 MHz. 3. Resistance is measured AT 1 GHz using transmission loss techniques. The junction capacitance specified is for a 00 (c hip) package style. Standard wafer evaluation and characterization is completed using a style 30 package. Diodes are available in many case styles. Each type offers performance trade-offs. The proper choice of package style depends on the end application and operating environment. Consult factory for assistance. Standard polarity (PIN) diodes and higher voltage PIN and NIP diodes are also available. (See data sheets for GC4200, GC4400, and GC4500 series respectively.) EELLEECCTTRRIICCAALL

GC4310 – GC4375 Microsemi Microwave Products 75 Technology Drive, Lowell, MA. 01851, 978-442-5600, Fax: 978-937-3748 Page 3 TM ® www.MICROSEMI.com Copyright  2007 Rev: 2009-02-02 RoHS Compliant CONTROL DEVICES High Speed NIP Diodes TYPICAL RS CURVES TYPICAL RS CURVES TYPICAL RS CURVES GGRRAAPPHHSS

GC4310 – GC4375 Microsemi Microwave Products 75 Technology Drive, Lowell, MA. 01851, 978-442-5600, Fax: 978-937-3748 Page 4 TM ® www.MICROSEMI.com Copyright  2007 Rev: 2009-02-02 RoHS Compliant CONTROL DEVICES High Speed NIP Diodes PACKAGE STYLE 00 PACKAGE STYLE 30 Dimensions vary by model. Consult factory for details. PACKAGE STYLE 35 PACKAGE STYLE 115

50 OHM BOLT CHANNEL MODULE

OTHER PACKAGE STYLES AVAILABLE ON REQUEST CONSULT FACTORY MMEECCHHAANNIICCAALL