GC4270 MICROSEMI | Alldatasheet
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DESCRIPTION
The GC4200 series are high speed (cathode base) PIN di- odes made with high resistivity epitaxial silicon material. These diodes are passivated with silicon dioxide forhigh stability and reliability and have been proven by thou- sands of device hours in high reliability systems. These devices can withstand storage temperatures from -65° to +200°C and will operate over the range from -55° to +150°C. All devices meet or exceed military environ- mental specifications of MIL-S-19500. The GC4200 se- ries will operate with as little as +10 mA forward bias. /B4d/B4f/B44/B45/B4c /B4e/B55/B4d/B42/B45/B52 /B42/B52/B45/B41/B4b/B44/B4f/B57/B4e /B56/B4f/B4c/B54/B41/B47/B45 /B28/B49 /B52 /B3d /B31/B30/Bb5/B41 /B4d/B41/B58/B29 /B56 /B42 /B28/B4d/B49/B4e/B29 /B28/B56/B6f/B6c/B74/B73/B29 /B4a/B55/B4e/B43/B54/B49/B4f/B4e /B43/B41/B50/B41/B43/B49/B54/B41/B4e/B43/B45 /B31 /B43 /B4a /B2d/B31/B30 /B28/B4d/B41/B58/B29 /B28/B70/B46/B29 /B53/B45/B52/B49/B45/B53 /B52/B45/B53/B49/B53/B54/B41/B4e/B43/B45 /B32 /B28/B32/B30/B6d/B41/B2c /B31 /B47/B48/B7a/B29 /B52 /B53/B32/B30 /B28/B4d/B41/B58/B29 /B28/B4f/B68/B6d/B73/B29 /B43/B41/B52/B52/B49/B45/B52 /B4c/B49/B46/B45/B54/B49/B4d/B45 /B28/B49 /B52 /B3d/B36/B6d/B41/B2c /B49/B46/B3d/B31/B30/B6d/B41/B29 /B54 /B4c /B28/B54/B59/B50/B29 /B28/B6e/B53/B29 /B54/B48/B45/B52/B4d/B41/B4c /B52/B45/B53/B49/B53/B54/B41/B4e/B43/B45 /B28/B4d/B41/B58/B29 /B28/Bb0/B43/B2f/B57/B29 /B47/B43/B34/B32/B37/B30 /B37/B30 /B30/B2e/B30/B36 /B31/B2e/B35 /B36/B30 /B38/B30 /B47/B43/B34/B32/B37/B31 /B37/B30 /B30/B2e/B31/B30 /B31/B2e/B30 /B36/B30 /B37/B30 /B47/B43/B34/B32/B37/B32 /B37/B30 /B30/B2e/B32/B30 /B30/B2e/B38 /B36/B30 /B37/B30 /B47/B43/B34/B32/B37/B33 /B37/B30 /B30/B2e/B33/B30 /B30/B2e/B37 /B36/B30 /B36/B30 /B47/B43/B34/B32/B37/B34 /B37/B30 /B30/B2e/B34/B30 /B30/B2e/B36 /B36/B30 /B35/B30 /B47/B43/B34/B32/B37/B35 /B37/B30 /B30/B2e/B35/B30 /B30/B2e/B35 /B36/B30 /B34/B30 /B47/B43/B34/B32/B31/B30 /B31/B30/B30 /B30/B2e/B30/B36 /B31/B2e/B35 /B31/B30/B30 /B38/B30 /B47/B43/B34/B32/B31/B31 /B31/B30/B30 /B30/B2e/B31/B30 /B31/B2e/B30 /B31/B30/B30 /B37/B30 /B47/B43/B34/B32/B31/B32 /B31/B30/B30 /B30/B2e/B32/B30 /B30/B2e/B37/B35 /B31/B30/B30 /B37/B30 /B47/B43/B34/B32/B31/B33 /B31/B30/B30 /B30/B2e/B33/B30 /B30/B2e/B36 /B31/B30/B30 /B36/B30 /B47/B43/B34/B32/B31/B34 /B31/B30/B30 /B30/B2e/B34/B30 /B30/B2e/B35 /B31/B30/B30 /B35/B30 /B47/B43/B34/B32/B31/B35 /B31/B30/B30 /B30/B2e/B35/B30 /B30/B2e/B33/B35 /B31/B30/B30 /B34/B30 /B47/B43/B34/B32/B32/B30 /B32/B35/B30 /B30/B2e/B30/B36 /B32/B2e/B35 /B34/B30/B30 /B38/B30 /B47/B43/B34/B32/B32/B31 /B32/B35/B30 /B30/B2e/B31/B30 /B32/B2e/B30 /B34/B30/B30 /B37/B30 /B47/B43/B34/B32/B32/B32 /B32/B35/B30 /B30/B2e/B32/B30 /B31/B2e/B35 /B34/B30/B30 /B37/B30 /B47/B43/B34/B32/B32/B33 /B32/B35/B30 /B30/B2e/B33/B30 /B31/B2e/B30 /B34/B30/B30 /B36/B30 /B47/B43/B34/B32/B32/B34 /B32/B35/B30 /B30/B2e/B34/B30 /B30/B2e/B38 /B34/B30/B30 /B35/B30 /B47/B43/B34/B32/B32/B35 /B32/B35/B30 /B30/B2e/B35/B30 /B30/B2e/B36 /B34/B30/B30 /B34/B30 RATINGS Maximum Leakage Current: 0.5µA at 80% of minimum rated breakdown Operating Temperature: -55°C to +150°C Storage Temperature: -65 °C to +200°C
APPLICATIONS
The GC4200 series can be used in RF circuits as an on/off element, as a switch, or as a current controlled resistor in attenuators extending over the frequency range from UHF through Ku band. Switch applications include high speed switches (ECM systems), TR switches, channel or antenna selection switches (telecommunications), duplexers (radar) and digital phase shifters (phased arrays). The GC4200 series are also used as passive and active limiters for low to moderate RF power levels. Attenuator type applications include amplitude modula- tors, AGC attenuators, power levelers and level set attenua- HIGH SPEED PIN DIODES The tabulated specifications above are for the style 30 package. Diodes may also be available in other case styles. Each type offers trade offs in series resistance, junction capacitance and carrier lifetime; the proper choice of which depends on the end application. Reverse polarity diodes (NIP) and higher voltage PIN and NIP diodes are also available. (See data sheets for GC4300, GC4400, and GC4500 series respectively.) /B4e/B6f/B74/B65/B73/B3a /B31/B2e /B43/B61/B70/B61/B63/B69/B74/B61/B6e/B63/B65 /B69/B73 /B6d/B65/B61/B73/B75/B72/B65/B64 /B61/B74 /B31 /B4d/B48/B7a /B61/B6e/B64 /B2d/B31/B30 /B76/B6f/B6c/B74/B73/B2e /B32/B2e /B52/B65/B73/B69/B73/B74/B61/B6e/B63/B65 /B69/B73 /B6d/B65/B61/B73/B75/B72/B65/B64 /B75/B73/B69/B6e/B67 /B74/B72/B61/B6e/B73/B6d/B69/B73/B73/B69/B6f/B6e /B6c/B6f/B73/B73 /B74/B65/B63/B68/B6e/B69/B71/B75/B65/B73/B2e /B33/B2e /B54/B68/B69/B73 /B73/B65/B72/B69/B65/B73 /B6f/B66 /B64/B65/B76/B69/B63/B65/B73 /B69/B73 /B61/B76/B61/B69/B6c/B61/B62/B6c/B65 /B69/B6e /B73/B74/B61/B6e/B64/B61/B72/B64 /B63/B61/B73/B65 /B73/B74/B79/B6c/B65/B73 /B30/B30/B2c /B31/B35/B2c /B33/B30/B2c /B33/B35 /B61/B6e/B64 /B38/B35/B2c /B70/B6c/B75/B73 /B6f/B74/B68/B65/B72 /B73/B74/B79/B6c/B65/B73 /B6f/B6e /B72/B65/B71/B75/B65/B73/B74/B2e ELECTRICAL SPECIFICATIONS: T A = 25°C /B53/B45/B4d/B49/B43/B4f/B4e/B44/B55/B43/B54/B4f/B52 /B4f/B50/B45/B52/B41 /B54/B49/B4f/B4e /B37/B35 /B54 /B65/B63/B68/B6e/B6f/B6c/B6f/B67/B79 /B44/B72/B69/B76/B65 /B95 /B4c/B6f/B77/B65/B6c/B6c/B2c /B4d/B41 /B30/B31/B38/B35/B31 /B95 /B54 /B65/B6c/B3a /B39/B37/B38/B2d/B34/B34/B32/B2d/B35/B36/B30/B30 /B95 /B46 /B61/B78/B3a /B39/B37/B38/B2d/B39/B33/B37/B2d/B33/B37/B34/B38 Control Devices
TYPICAL PERFORMANCE CURVES GC4270 GC4271 GC4272 GC4273 GC4275 GC4274 R SERIES RESISTANCE - (OHMS)s 100 1.0 .01 .1 1.0 10. 100 I FORWARD BIAS CURRENT - (mA)F /B53/B45/B4d/B49/B43/B4f/B4e/B44/B55/B43/B54/B4f/B52 /B4f/B50/B45/B52/B41 /B54/B49/B4f/B4e /B37/B35 /B54 /B65/B63/B68/B6e/B6f/B6c/B6f/B67/B79 /B44/B72/B69/B76/B65 /B95 /B4c/B6f/B77/B65/B6c/B6c/B2c /B4d/B41 /B30/B31/B38/B35/B31 /B95 /B54 /B65/B6c/B3a /B39/B37/B38/B2d/B34/B34/B32/B2d/B35/B36/B30/B30 /B95 /B46 /B61/B78/B3a /B39/B37/B38/B2d/B39/B33/B37/B2d/B33/B37/B34/B38 Control Devices