GC2X100MPS06-227 GENESIC | Alldatasheet

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GCϮXϭϬϬMPSϬϲ-ϮϮϳ ϲϱϬ V SiC MPS™ Diode Feb 2019 Rev1.1 www.genesicsemi.com/schottky_mps/GC2X100MPS06-2 27.pdf Page 1 of 7 Silicon Carbide Schottky Diode Features Package

  • High Avalanche (UIS) Capability
  • Enhanced Surge Current Capability
  • Superior Figure of Merit QC/IF
  • 3000 V Isolation for Low Thermal Resistance
  • 175 °C Maximum Operating Temperature
  • Temperature Independent Fast Switching
  • Positive Temperature Coefficient of VF
  • AEC-Q101 Qualified and PPAP Capable SOT-227 (Isolated Base) Advantages Applications
  • Low Standby Power Losses
  • Improved Circuit Efficiency (Lower Overall Cost)
  • Low Switching Losses
  • Ease of Paralleling without Thermal Runaway
  • Smaller Heat Sink Requirements
  • Low Reverse Recovery Current
  • Low Device Capacitance
  • Low Reverse Leakage Current
  • Boost Diode in Power Factor Correction (PFC)
  • Switched Mode Power Supply (SMPS)
  • Uninterruptible Power Supply (UPS)
  • Motor Drives
  • Freewheeling / Anti-parallel Diode in Inverters
  • Solar Inverters
  • Electric Vehicles (EV) & DC Fast Charging
  • Induction Heating & Welding Absolute Maximum Ratings (At TC = 25 °C Unless Otherwise Stated) Parameter Symbol Conditions Values Unit Repetitive Peak Reverse Voltage (Per Leg) V RRM 650 V Continuous Forward Current (Per Leg / Per Device) I F TC = 25 °C, D = 1 209 / 418 A TC = 100 °C, D = 1 136 / 272 TC = 129 °C, D = 1 100 / 200 Non-Repetitive Peak Forward Surge Current, Half Sine Wave (Per Leg) I F,SM TC = 25 °C, tP = 10 ms 800 A TC = 150 °C, tP = 10 ms 640 Repetitive Peak Forward Surge Current, Half Sine Wave (Per Leg) IF,RM TC = 25 °C, tP = 10 ms 400 A TC = 150 °C, tP = 10 ms 320 Non-Repetitive Peak Forward Surge Current (Per Leg) I F,max T C = 25 °C, tP = 10 µs 4000 A i2t Value (Per Leg) ∫i 2 dt T C = 25 °C, tP = 10 ms 3200 A 2s Non-Repetitive Avalanche Energy (Per Leg) E AS L = 0.3 mH, I AS = 100 A 1450 mJ Diode Ruggedness (Per Leg) dV/dt V R = 0 ~ 520 V 100 V/ns Power Dissipation (Per Leg / Per Device) P tot T C = 25 °C 517 / 1034 W Operating and Storage Temperature T j , Tstg -55 to 175 °C * Per Device VRRM = 650 V IF (Tc = 100°C) = 272 A * QC = 320 nC *

GCϮXϭϬϬMPSϬϲ-ϮϮϳ ϲϱϬ V SiC MPS™ Diode Feb 2019 Rev1.1 www.genesicsemi.com/schottky_mps/GC2X100MPS06-2 27.pdf Page 2 of 7 Electrical Characteristics (Per Leg) Parameter Symbol Conditions Values Unit Min. Typ. Max. Diode Forward Voltage V F IF = 50 A, Tj = 25 °C 1.5 1.8 V IF = 50 A, Tj = 175 °C 1.8 2.2 Reverse Current I R VR = 650 V, Tj = 25 °C 2 2 0 µA VR = 650 V, Tj = 175 °C 30 300 Total Capacitive Charge Q C IF ≤ IF,MAX dIF/dt = 200 A/μs Tj = 175 °C VR = 200 V 114 n C VR = 400 V 160 Switching Time t s VR = 200 V < 10 ns VR = 400 V Total Capacitance C VR = 1 V, f = 1 MHz 5170 pF VR = 400 V, f = 1 MHz 460 Thermal / Package Characteristics Parameter Symbol Conditions Values Unit Min. Typ. Max. Thermal Resistance, Junction – Case (Per Leg) R thJC 0.29 °C/W Weight WT 28 g Mounting Torque T M Screws to Heatsink 1.5 Nm Terminal Connection (M4) 1.3 Isolation Voltage (RMS) V ISO t = 1 s (50 / 60 Hz) 3000 V t = 60 s (50 / 60 Hz) 2500 Creepage Distance on Surface dCtt Terminal to Terminal 10.5 mm dCtb Terminal to Backside 8.5 Striking Distance Through Air dStt Terminal to Terminal 3.2 mm dStb Terminal to Backside 6.8

GCϮXϭϬϬMPSϬϲ-ϮϮϳ ϲϱϬ V SiC MPS™ Diode Feb 2019 Rev1.1 www.genesicsemi.com/schottky_mps/GC2X100MPS06-2 27.pdf Page 6 of 7 Package Dimensions NOTE 1. CONTROLLED DIMENSION IS INCH. DIMENSION IN BRACKET IS MILLIM ETER. 2. DIMENSIONS DO NOT INCLUDE END FLASH, MOLD FLASH, MATERIAL PR OTRUSIONS

GCϮXϭϬϬMPSϬϲ-ϮϮϳ ϲϱϬ V SiC MPS™ Diode Copyright © 2019 GeneSiC Semiconductor Inc. All Rights Reserved The information in this document is subject to change without notice Published by GeneSiC Semiconductor, Inc.

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Dulles, VA 20166 Feb 2019 Rev1.1 Page 7 of 7 RoHS Compliance The levels of RoHS restricted materials in this product are bel ow the maximum concentration values (also referred to as the threshold limits) permitted for such substan ces, or are used in an exempted application, in accordance with EU Directive 2011/65/EC (RoHS 2), as adopted by EU member states on January 2, 2013 and amended on March 31, 2015 by EU Directive 2015/863. RoHS Declarations for this product can be obtained from your GeneSiC representative. REACh Compliance REACh substances of high concern (SVHCs) information is availab le for this product. Since the European Chemical Agency (ECHA) has published notice of their intent to frequently revise the SVHC listing for the foreseeable future, please contact a GeneSiC representative to insure you get the most up-to-date REACh SVHC Declaration. REACh banned substance information (REACh Article 67) is also available upon request. This product has not been designed or tested for use in, and is not intended for use in, applications implanted into the human body nor in applications in which failure of the prod uct could lead to death, personal injury or property damage, including but not limited to equipment used in the oper ation of nuclear facilities, life-support machines, cardiac defibrillators or similar emergency medical equipment, aircraft navigation or communication or control systems, or air traffic control systems. GeneSiC disclaims all and any warranty and liability arising ou t of use or application of any product. No license, express or implied to any intellectual property rights is granted by this document. Related Links

  • SPICE Models: https://www.gen esicsemi.com/schottky-mps
  • Evaluation Boards: https://www.g enesicsemi.com/technical-support
  • Quality Manual: https://www.genesicsemi.com/technical-support/ quality-manual
  • Compliance: https://www.genesics emi.com/technical-support/compliance
  • Reliability Report: https://www.g enesicsemi.com/technical-support/reliability www.genesicsemi.com/schottky-mps